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    S5110 Search Results

    S5110 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS51100DGQG4 Texas Instruments 3A Source/Sink DDR terminator Regulator 10-MSOP-PowerPAD -40 to 85 Visit Texas Instruments Buy
    TPS51100DGQ Texas Instruments 3A Source/Sink DDR terminator Regulator 10-MSOP-PowerPAD -40 to 85 Visit Texas Instruments Buy
    TPS51100DGQR Texas Instruments 3A Source/Sink DDR terminator Regulator 10-MSOP-PowerPAD -40 to 85 Visit Texas Instruments Buy
    TPS5110PWR Texas Instruments Synchronous Buck PWM Controller with NMOS LDO Controller 24-TSSOP -40 to 85 Visit Texas Instruments Buy
    TPS51103DRCR Texas Instruments Integrated LDO with Switchover Circuit for Notebook Computers 10-VSON -40 to 85 Visit Texas Instruments Buy
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    S5110 Price and Stock

    Vishay Siliconix SISS5110DN-T1-GE3

    N-CHANNEL 100 V (D-S) MOSFET POW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SISS5110DN-T1-GE3 Digi-Reel 12,000 1
    • 1 $2.2
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    • 100 $2.2
    • 1000 $0.70011
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    SISS5110DN-T1-GE3 Reel 12,000 3,000
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    SISS5110DN-T1-GE3 Cut Tape 12,000 1
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    • 10 $1.408
    • 100 $2.2
    • 1000 $0.70011
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    Texas Instruments TPS51100DGQR

    IC REG CONV DDR 1OUT 10MSOP
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    DigiKey TPS51100DGQR Digi-Reel 6,952 1
    • 1 $1.39
    • 10 $1.015
    • 100 $0.8157
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    TPS51100DGQR Cut Tape 6,952 1
    • 1 $1.39
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    • 100 $0.8157
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    TPS51100DGQR Reel 2,500 2,500
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    Mouser Electronics TPS51100DGQR 4,334
    • 1 $1.39
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    • 100 $0.766
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    Bristol Electronics TPS51100DGQR 2,580
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    TPS51100DGQR 1,330
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    Ameya Holding Limited TPS51100DGQR 17,500
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    ComSIT USA TPS51100DGQR 4,445
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    Chip1Stop TPS51100DGQR Cut Tape 3,757
    • 1 $1.43
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    • 1000 $0.607
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    Win Source Electronics TPS51100DGQR 30,020
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    PanJit Group PZS5110BCH-AU_R1_000A1

    SILICON ZENER DIODE
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    DigiKey PZS5110BCH-AU_R1_000A1 Cut Tape 4,978 1
    • 1 $0.18
    • 10 $0.125
    • 100 $0.18
    • 1000 $0.05731
    • 10000 $0.05157
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    Ozdisan Elektronik PZS5110BCH-AU_R1_000A1
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    • 10000 $0.0602
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    PanJit Group PZS5110BAS_R1_00001

    SILICON ZENER DIODE
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    DigiKey PZS5110BAS_R1_00001 Cut Tape 2,900 1
    • 1 $0.16
    • 10 $0.111
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    • 1000 $0.05075
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    Ozdisan Elektronik PZS5110BAS_R1_00001
    • 1 -
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    • 1000 $0.06478
    • 10000 $0.0531
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    Texas Instruments TPS51100DGQ

    IC REG CONV DDR 1OUT 10MSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TPS51100DGQ Tube 750 1
    • 1 $1.63
    • 10 $1.192
    • 100 $1.63
    • 1000 $0.86661
    • 10000 $0.79501
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    Mouser Electronics TPS51100DGQ 10,382
    • 1 $1.63
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    • 100 $0.932
    • 1000 $0.866
    • 10000 $0.772
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    Bristol Electronics TPS51100DGQ 870
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    TPS51100DGQ 261
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    TME TPS51100DGQ 1
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    ComSIT USA TPS51100DGQ 65
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    Win Source Electronics TPS51100DGQ 30,000
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    S5110 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S5110 Syntron Silicon Rectifier Data Book 1971 Scan PDF
    S51100 Syntron Silicon Rectifier Data Book 1971 Scan PDF
    S-5110A1 Nason Company Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array Original PDF
    S-5110A3 Nason Company Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array Original PDF
    S-5110B1 Nason Company Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array Original PDF
    S-5110B3 Nason Company Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array Original PDF
    S-5110C Nason Company Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array Original PDF
    S-5110D Nason Company Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array Original PDF

    S5110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIP41109DY-T1-E3

    Abstract: SiP41109 SiP41109DB SiP41110 SiP41110DB
    Text: SiP41109/41110 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D D APPLICATIONS PWM With Tri-State Enable 12-V Low-Side Gate Drive SiP41109 8-V Low-Side Gate Drive (SiP41110) Undervoltage Lockout


    Original
    PDF SiP41109/41110 SiP41109 SiP41110 30-ns 18-Jul-08 SIP41109DY-T1-E3 SiP41109DB SiP41110DB

    5070d

    Abstract: S-5031C S-5031A1 S-5071A1 5131A 5130c side 5150c rotary coded switch 16 positions resistor 3.3k S-5010C
    Text: Model S-5000 Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range Storage Temp. Range Sealing Method Electrical Contact Rating Non-Switching Switching Contact Resistance Insulation Resistance


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    PDF S-5000 S-5010A~ S-5030A~ S-5011A~ S-5031A~ S-5110A~ S-5130A~ S-5111A~ S-5131A~ 5070d S-5031C S-5031A1 S-5071A1 5131A 5130c side 5150c rotary coded switch 16 positions resistor 3.3k S-5010C

    Untitled

    Abstract: No abstract text available
    Text: SiP41106/41107 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion with Adjustable High-Side Propagation Delay FEATURES D D D D D D D D D D APPLICATIONS 12-V Low-Side Gate Drive SiP41106 8-V Low-Side Gate Drive (SiP41107)


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    PDF SiP41106/41107 SiP41106 SiP41107 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V 7.1 0.035 @ VGS = 2.5 V 6.0 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V


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    PDF Si4562DY Si4562DY-T1 Si4562DY-T1--E3 S-51109--Rev. 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V 7.1 0.035 @ VGS = 2.5 V 6.0 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V


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    PDF Si4562DY Si4562DY-T1 Si4562DY-T1--E3 08-Apr-05

    SI4562DY-T1-E3

    Abstract: Si4562DY-T1 Si4562DY 51109
    Text: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V - 5.0 • TrenchFet Power MOSFET: 2.5 Rated


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    PDF Si4562DY Si4562DY-T1 Si4562DY-T1-E3 S-51109-Rev. 04-Apr-06 51109

    Mosfet n-channel

    Abstract: No abstract text available
    Text: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V - 5.0 • TrenchFet Power MOSFET: 2.5 Rated


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    PDF Si4562DY Si4562DY-T1 Si4562DY-T1-E3 18-Jul-08 Mosfet n-channel

    73372

    Abstract: No abstract text available
    Text: SiP42102/42103 New Product Vishay Siliconix Half-Bridge N-Channel 1-A MOSFET Drivers for Motor Control FEATURES D D D D D D D D APPLICATIONS D H-Bridge Motor Controls D 3-Phase Motor Controls 12-V Low-Side Gate Drive SiP42102 8-V Low-Side Gate Drive (SiP42103)


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    PDF SiP42102/42103 SiP42102 SiP42103 SiP42102/3 08-Apr-05 73372

    SiP41109

    Abstract: SiP41109DB SiP41110 SiP41110DB
    Text: SiP41109/41110 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D D APPLICATIONS PWM With Tri-State Enable 12-V Low-Side Gate Drive SiP41109 8-V Low-Side Gate Drive (SiP41110) Undervoltage Lockout


    Original
    PDF SiP41109/41110 SiP41109 SiP41110 30-ns 08-Apr-05 SiP41109DB SiP41110DB

    73373

    Abstract: ic 73373
    Text: SiP41108 New Product Vishay Siliconix Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay FEATURES D D D D D D D D D APPLICATIONS 8-V or 12-V Low-Side Gate Drive Undervoltage Lockout Internal Bootstrap Diode


    Original
    PDF SiP41108 S-51104--Rev. 13-Jun-05 73373 ic 73373

    Untitled

    Abstract: No abstract text available
    Text: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V - 5.0 • TrenchFet Power MOSFET: 2.5 Rated


    Original
    PDF Si4562DY Si4562DY-T1 Si4562DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SiP42102/42103 New Product Vishay Siliconix Half-Bridge N-Channel 1-A MOSFET Drivers for Motor Control FEATURES D D D D D D D D APPLICATIONS D H-Bridge Motor Controls D 3-Phase Motor Controls 12-V Low-Side Gate Drive SiP42102 8-V Low-Side Gate Drive (SiP42103)


    Original
    PDF SiP42102/42103 SiP42102 SiP42103 SiP42102/3 S-51104--Rev. 13-Jun-05

    SiP41108

    Abstract: TSSOP-16
    Text: SiP41108 New Product Vishay Siliconix Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay FEATURES D D D D D D D D D APPLICATIONS 8-V or 12-V Low-Side Gate Drive Undervoltage Lockout Internal Bootstrap Diode


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    PDF SiP41108 08-Apr-05 TSSOP-16

    35023-0008

    Abstract: UL2678 878311621 51191-1000 50802-8000 right angle 14 pin pcb connector 2mm pitch 530250610 878331621 PS-87568-004 87832-1220
    Text: 2.00 to 2.50mm .079 to .098" Pitch PCB and Wire Connectors 2.00mm (.079") Pitch Connectors Dual Row Wire-to-Board, Flex-to-Board and Board-to-Board Connectors – Milli-Grid . B-2 to B-13 Single/Dual Row Multi-Harness Wire-to-Wire and Wire-to-Board Connectors – Mi II™. B-14 to B-20


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    PDF

    p181 4 pin

    Abstract: 511000 dram S511000 TC 511000
    Text: S511000 may isso 1,048,576 x 1 Fast Page Mode CMOS Dynamic RAM FEATURES GENERAL DESCRIPTION • Available in 70/80/100/120 ns The M O SEL M S511000 is a CM OS dynam ic RAM organized as 1,048,576 w ords x 1 bit. The M S511000 has been designed for m ainfram e, buffer memory,


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    PDF S511000 PID0061 MS511000 MS511000-70PC MS511000-70SC MS511000-70ZC MS511000-80PC MS511000-80SC MS511000-80ZC p181 4 pin 511000 dram TC 511000

    Untitled

    Abstract: No abstract text available
    Text: MOSEL M S511000 1,048,576 x 1 Fast Page Mode CMOS Dynamic RAM F E A TU R ES G E N E R A L D E S C R IP TIO N • Available in 70/80/100/120 ns The MOSEL S511000 is a CMOS dynamic RAM organized as 1,048,576 words x 1 bit. The S511000 has been designed for mainframe, buffer memory,


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    PDF S511000 MS511000 MS511000 MS511000-70PC P18-1 MS511000-70SC S26-1 MS511000-70ZC Z20-1

    p181 4 pin

    Abstract: MS511000-12PC p181 MS511000-10 MS511000-12 MS511000-70 MS511000-80 S511000-70 S5110 S511000
    Text: M OSEL M S511000 1,048,576 x 1 Fast Page Mode CMOS Dynamic RAM FEATURES G E N E R A L D E S C R IP T IO N • Available in 70/80/100/120 ns The M O SEL M S 511000 is a CM O S dynam ic RAM organized as 1,048,576 words x 1 bit. The M S 511000 has been designed for m ainfram e, buffer memory,


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    PDF MS511000 MS511000 PID0061 MS511000-70PC P18-1 MS511000-70SC S26-1 MS511000-70ZC p181 4 pin MS511000-12PC p181 MS511000-10 MS511000-12 MS511000-70 MS511000-80 S511000-70 S5110 S511000

    P181 G

    Abstract: DRAM 511000-70 ss1891 p181 4 pin 511000-70
    Text: MOSEL M S511000 1,048,576 x 1 Fast Page Mode CMOS Dynamic RAM FEATURES GENERAL DESCRIPTION • Available in 70/80/100/120 ns The MOSEL S511000 is a CMOS dynamic RAM organized as 1,048,576 words x 1 bit. The S511000 has been designed for mainframe, buffer memory,


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    PDF S511000 MS511000 PID0061 MS511000 MS511000-70PC MS511000-70SC MS511000-70ZC MS511000-80PC MS511000-80SC P181 G DRAM 511000-70 ss1891 p181 4 pin 511000-70

    EC2 WS-501

    Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
    Text: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,


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    PDF 250ns 250ns. WS-20110 WS-20120 WS-20130 WS-20140 WS-20150 WS-20160 WS-201 EC2 WS-501 WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570

    register file

    Abstract: 32 bit barrel shifter circuit diagram using multi 16 bit barrel shifter circuit diagram block diagram for barrel shifter seiko processor
    Text: S -5110A INTEGER PROCESSING UNIT IPU Th e S-5110A (IP U ) is a C M O S L S I with a 32-bit A LU block, a seq u en cer block with a 16k-word ad d ress area, and a diagnostics block integrated on a single chip. Its high integration level s a v e s board sp a ce and le sse n s the power


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    PDF -5110A S-5110A 32-bit 16k-word 128-word 64-bit input/32-bit register file 32 bit barrel shifter circuit diagram using multi 16 bit barrel shifter circuit diagram block diagram for barrel shifter seiko processor

    s5130

    Abstract: S5110 S5-135 1N1662 1N4879 R5110 1N1665 r517 1N1661 1N1663
    Text: Avalanche Silicon Power Rectifiers Series 51 I E L E C T R IC A L C H A R A C T E R IS T IC S : M a x im u m A v e r a g e F o r w a r d C u rre n t, S in g le P h a se H a lf O W a v e D C R a tin g a t 126° C. C a se T em p era tu re M a x im u m S u r g e C u rre n t


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    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


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    DIODE S5

    Abstract: s501 diode
    Text: Model S-5000 Dip Rotary Code Switch W / Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range : -25°C T O +75°C Storage Temp. Range : -25°C T O +75°C Sealing Method : O Ring Sealed Electrical Contact Rating Non-Switching


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    PDF S-5000 S-5110A~ -5I30A S-513 S-5050A- S-5070A- S-505IA- S-507IA- S-5150A- DIODE S5 s501 diode

    S5151 DIODE

    Abstract: S5151 Diode S5151 S-5051A1 s5c diode S-5150A3 DIODE S51 5030a DIODE MARKING CODE B3
    Text: Model S-5000 Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Tem p. Range -25°C TO + 7 5 °C Storage Tem p. Range -25°C TO + 7 5 °C Sealing M ethod 0 Ring Sealed Electrical Contact Rating N on-Sw itching


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    PDF S-5000 -5010A S-5030A- S5151 DIODE S5151 Diode S5151 S-5051A1 s5c diode S-5150A3 DIODE S51 5030a DIODE MARKING CODE B3