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    LSI Corporation LS7166A

    IC BCD COUNTER QUAD 24BIT 20DIP
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    LSI Corporation LS7166B-S

    IC BCD COUNTR QUAD 24BIT 20SOIC
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    DigiKey LS7166B-S Tube 1
    • 1 $12.37
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    LSI Corporation LS7166A-S

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    Bristol Electronics LS7166A-S 14
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    LSI Corporation LS7166A-TS

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    DigiKey LS7166A-TS Tube 1
    • 1 $12.38
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    • 100 $9.11
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    JRH ELECTRONICS 667-218-M-S716-6

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    DigiKey 667-218-M-S716-6 Bulk 1
    • 1 $452.02
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    S7166 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SUP85N15-21

    Abstract: sup85n15 SUP85N15-21-E3
    Contextual Info: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		SUP85N15-21 O-220AB SUP85N15-21-E3 08-Apr-05 SUP85N15-21 sup85n15 SUP85N15-21-E3 PDF

    SUD50P10-43L

    Contextual Info: New Product SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET Qg (Typ) RoHS 54 nC COMPLIANT TO-252


    Original     		SUD50P10-43L O-252 SUD50P10-43L-E3 08-Apr-05 SUD50P10-43L PDF

    Contextual Info: SUP40N10-30 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 40 0.034 at VGS = 6 V 37.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT


    Original     		SUP40N10-30 O-220AB SUP40N10-30-E3 18-Jul-08 PDF

    Contextual Info: SUD50N04-09H Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 40 0.009 at VGS = 10 V 50 55 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • High Threshold Voltage At High Temperature


    Original     		SUD50N04-09H O-252 SUD50N04-09H-E3 08-Apr-05 PDF

    Contextual Info: SUR50N06-07L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 96 0.0088 at VGS = 4.5 V 88 V(BR)DSS (V) 60 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS COMPLIANT APPLICATIONS


    Original     		SUR50N06-07L O-252 SUR50N06-07L-E3 18-Jul-08 PDF

    SUP85N15-21-E3

    Abstract: SUP85N15-21 SUP85N1521E3
    Contextual Info: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		SUP85N15-21 O-220AB SUP85N15-21-E3 18-Jul-08 SUP85N15-21-E3 SUP85N15-21 SUP85N1521E3 PDF

    Contextual Info: New Product SUD50N06-07L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 96 0.0088 at VGS = 4.5 V 88 V(BR)DSS (V) 60 • TrenchFET Power MOSFETS • 175 °C Junction Temperature RoHS


    Original     		SUD50N06-07L O-252 SUD50N06-07L-E3 08-Apr-05 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    SUD50P04-13L-E3

    Abstract: SUD50P04-13L
    Contextual Info: New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 rDS(on) (Ω) ID (A) 0.013 at VGS = - 10 V - 60a 0.022 at VGS = - 4.5 V - 48 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS


    Original     		SUD50P04-13L O-252 SUD50P04-13L-E3 08-Apr-05 SUD50P04-13L-E3 SUD50P04-13L PDF

    74281

    Abstract: sup90n08-4m8p
    Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


    Original     		SUP90N08-4m8P O-220AB SUP90N08-4m8P-E3 18-Jul-08 74281 sup90n08-4m8p PDF

    SUM90N08

    Abstract: 4A88
    Contextual Info: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


    Original     		SUM90N08-4m8P O-263 SUM90N08-4m8P-E3 18-Jul-08 SUM90N08 4A88 PDF

    SUP18N15-95

    Abstract: SUP18N15-95-E3 06AUG07
    Contextual Info: SUP18N15-95 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A) 0.095 at VGS = 10 V 18 0.100 at VGS = 6 V 17.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT


    Original     		SUP18N15-95 O-220AB SUP18N15-95-E3 08-Apr-05 SUP18N15-95 SUP18N15-95-E3 06AUG07 PDF

    4 bit binary multiplier

    Abstract: diagram for 4 bits binary multiplier circuit Toggle flip flop LS7166 LS7166-SOIC LS7166 cmos
    Contextual Info: S7166 ^ncoc*er *° M icroprocessor _ Interface Chip_ . v. ~ Features: • Preloadable 24-bit Up/Down Counter ° Choice of two 20-pin packages: ° SOIC Surface M ount or DIP • XI or X2 or X4 Resolution Multiplier • Binary or BCD • Divide-by-N


    OCR Scan     		LS7166 24-bit 20-pin 4 bit binary multiplier diagram for 4 bits binary multiplier circuit Toggle flip flop LS7166-SOIC LS7166 cmos PDF

    Contextual Info: New Product SUD50N06-08H Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 60 0.0078 at VGS = 10 V 93 94 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg Tested High Threshold at High Temperature


    Original     		SUD50N06-08H O-252 SUD50N06-08H0-E3 08-Apr-05 PDF

    Contextual Info: SUR50N06-07L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 96 0.0088 at VGS = 4.5 V 88 V(BR)DSS (V) 60 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS COMPLIANT APPLICATIONS


    Original     		SUR50N06-07L O-252 SUR50N06-07L-E3 08-Apr-05 PDF

    Contextual Info: New Product SUD35N05-26L Vishay Siliconix N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.020 at VGS = 10 V 35 0.026 at VGS = 4.5 V 30 VDS (V) 55 • TrenchFET Power MOSFETS • 175 °C Rated Maximum Junction Temperature


    Original     		SUD35N05-26L O-252 SUD35N05-26L 08-Apr-05 PDF

    Contextual Info: SUP40N10-35 Vishay Siliconix N-Channel 105-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature ID (A) 0.035 at VGS = 10 V 37.5 0.038 at VGS = 6 V 36.0 RoHS COMPLIANT TO-220AB


    Original     		SUP40N10-35 O-220AB SUP40N10-35-E3 08-Apr-05 PDF

    SUD17N25-165

    Abstract: SUD17N25-165-E3
    Contextual Info: New Product SUD17N25-165 Vishay Siliconix N-Channel 250-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 250 0.165 at VGS = 10 V 17 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS COMPLIANT D TO-252 G Drain Connected to Tab


    Original     		SUD17N25-165 O-252 SUD17N25-165-E3 18-Jul-08 SUD17N25-165 SUD17N25-165-E3 PDF

    SUD50N06-08H

    Contextual Info: New Product SUD50N06-08H Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 60 0.0078 at VGS = 10 V 93 94 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg Tested High Threshold at High Temperature


    Original     		SUD50N06-08H O-252 SUD50N06-08H0-E3 18-Jul-08 SUD50N06-08H PDF

    SUP18N15-95

    Abstract: SUP18N15-95-E3
    Contextual Info: SUP18N15-95 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A) 0.095 at VGS = 10 V 18 0.100 at VGS = 6 V 17.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT


    Original     		SUP18N15-95 O-220AB SUP18N15-95-E3 18-Jul-08 SUP18N15-95 SUP18N15-95-E3 PDF

    SUP57N20-33

    Abstract: SUP57N20-33-E3
    Contextual Info: SUP57N20-33 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.033 at VGS = 10 V 57 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Isolated DC/DC converters


    Original     		SUP57N20-33 O-220AB SUP57N20-33-E3 18-Jul-08 SUP57N20-33 SUP57N20-33-E3 PDF

    SUD50N06-07L

    Abstract: SUD50N06-07L-E3
    Contextual Info: New Product SUD50N06-07L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 96 0.0088 at VGS = 4.5 V 88 V(BR)DSS (V) 60 • TrenchFET Power MOSFETS • 175 °C Junction Temperature RoHS


    Original     		SUD50N06-07L O-252 SUD50N06-07L-E3 18-Jul-08 SUD50N06-07L SUD50N06-07L-E3 PDF

    SUD50P10-43L

    Abstract: A38S
    Contextual Info: New Product SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET Qg (Typ) RoHS 54 nC COMPLIANT TO-252


    Original     		SUD50P10-43L O-252 SUD50P10-43L-E3 18-Jul-08 SUD50P10-43L A38S PDF

    74281

    Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


    Original     		SUP90N08-4m8P O-220AB SUP90N08-4m8P-E3 08-Apr-05 74281 PDF