S726 Search Results

ISL6251A

Abstract: G548A2P8U imd2at108 LITTLE-1206-7A ZD12V FDS6900AS ISL6251 PDS1040S F423 25V1206
Contextual Info: 5 4 3 2 ACIN 0301-S.Y Pan - Add fuse 0.02_3720 PR1 VA PJ2 PF1 PVA 1 2 3 4 1 PL1 2 PVA1 3 1 2 3 VIN 4 2 PC3 PC4 .1u/25V_8 .1u/25V_8 PD1 PDS1040S 2P HI0805R800R_8_5A .1u/25V_8 PR97 220K/F_4 PC103 .1u/25V_8 1 .1u/25V_8 1P LITTLE-1206-7A PC2 PC1 6 5 2DC-S726X201-4P-H

Si4636DY

Abstract: Si4636DY-T1-E3
Contextual Info: New Product Si4636DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0085 at VGS = 10 V 17 0.0105 at VGS = 4.5 V 15.6 Qg (Typ)

SUD50N10-18P-E3

Abstract: SUD50N10-18P
Contextual Info: New Product SUU/SUD50N10-18P Vishay Siliconix N-Channel 100-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.0185 at VGS = 10 V 50 48 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS

si4778

Abstract: Si4778DY Si4778DY-T1-E3 64bc30
Contextual Info: New Product Si4778DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 rDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8a 0.028 at VGS = 4.5 V a 8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 5.5 nC APPLICATIONS

S7267

Abstract: SIE854DF
Contextual Info: New Product SiE854DF Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package

Contextual Info: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS

DG604

Abstract: Device marking code 1m diode TSSOP14
Contextual Info: New Product DG604 Vishay Siliconix 1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer DESCRIPTION FEATURES The DG604 is an analog 4-channel CMOS, multiplexer, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG604 is fully

69653

Abstract: Si4448DY Si4448 6965-3 SI4448DY-T1-E3
Contextual Info: New Product Si4448DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0017 at VGS = 4.5 V 50 0.002 at VGS = 2.5 V 46 0.0027 at VGS = 1.8 V 40 VDS (V) 12 Qg (Typ) 56 nC • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: DG2002 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG2002 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed tON: 8 ns,

Tape Information

Abstract: polarpak r030 bo 410
Contextual Info: Tape Information Vishay Siliconix PolarPAK CARRIER TAPE 0.30 ± 0.05 4.00 See Note 1 2.00 ± 0.05 See Note 6 Ø 1.50 + 0.0 - 0.1 Ø 1.50 + 0.0 - 0.1 A 1.75 R0.30 TYP. 5.50 ± 0.05 See Note 6 12.00 ± 0.3 4.10 TYP. Bo B B A K1 8.00 Ko R0.30 (TYP.) SECTION A-A

SR927W

Abstract: sp393 SR916SW sr44sw Duracell sr44 SR626SW SR41SW sr920sw sr41W SR716SW
Contextual Info: << Previous Page | Next Page >> WATCH, CALCULATOR AND ORGANIZER BATTERIES VOLTS mAh DIA. x HGT. MM EVEREADY DURACELL PANASONIC RAY–O–VAC OTHER IEC NO. NEDA NO. 301 1.55 115 11.6 x 4.2 301 D301 SP301 301-1 SR43 1132S0 303 309 314 315 317 319 321 323 325

Contextual Info: DG9411 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed tON: 9 ns,

Contextual Info: DG9411 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed tON: 9 ns,

c4927

Abstract: si7732
Contextual Info: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Si4840BDY

Abstract: Si4840BDY-T1-E3 A3350
Contextual Info: New Product Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 15 nC

cmps a44

Contextual Info: 13 13.1 INSTRUCTION SET OVERVIEW The instruction set used by the Am186EM and Am188EM microcontrollers is identical to the 80C186/188 instruction set. An instruction can reference from zero to several operands. An operand can reside in a register, in the instruction itself, or in memory.

Si3424BDV-T1-E3

Contextual Info: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT

Si4116DY

Abstract: Si4116DY-T1-E3 si4116
Contextual Info: New Product Si4116DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0086 at VGS = 10 V 18 0.0095 at VGS = 4.5 V 17 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 17.5 nC APPLICATIONS

74248

Abstract: Si4941EDY 74248 datasheet
Contextual Info: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS

DG2002

Abstract: DG2002DL-T1 DG2002DL-T1-E3 HP4192A SC70-6 s7260
Contextual Info: DG2002 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG2002 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed tON: 8 ns,

Contextual Info: DG9411 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed tON: 9 ns,

SUB75P03-07

Abstract: SUP75P03-07
Contextual Info: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View

69814

Abstract: C4927
Contextual Info: New Product Si7732DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60a 0.0024 at VGS = 4.5 V 60a VDS (V) 20 Qg (Typ) 57 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested