S820 Search Results

S8202

Abstract: TRANSISTOR S2A
Contextual Info: polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 4 Watts Single Ended

Contextual Info: Customer Information Sheet DRAWING No.: S820I-46R SHEET 2 OF I 2 16.00 I .75 4.00 € 3 - - 0 - 1 - 0 - TYP - 0 - 2.00 - 0 - - 0 - I - 0 - - 0 - IN DOUBT - ASK | | NOT TO SCALE | THIRD ANGLE PROJECTION ALL DIMENSIONS I N mm X TYP- TYP - 0 - IF I .50 + 0 . 10

GD411C

Abstract: GD508C GD514B GD408C GD408D GD408E GD411A GD411B GD411D GD508AA
Contextual Info: - 272 B GD408C GD408D GD408E GD411A GD4L1B GD411C GD411D GD4UE GD508A GD508AA GD508B GD508C GD5Q8D GD508E GD511A GD511AA GD511B GD511C GD511D GD511E GD514A GD514AA GD514B GD514C GD514D GD514E GD518A GD518AA GD518B GD518C GD518D S3020 S3020A S8201 S8202 - &

Contextual Info: polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB164

Abstract: gP DIODE S8201 GP 015 DIODE 12W15
Contextual Info: T B - 1 6 4 S 8 2 0 1 G a i n /E f f i c i e n c y v s F r e q u e n c y ; V d s = 2 8 V d c I d q = . 2 A 16 100 90 80 12 70 60 Gain 8 50 Pout fixed at 1.5W 40 Efficiency 30 4 20 10 50 100 150 200 250 300 350 400 450 500 550 Freq in MHz TB-164 S8201 Pout vs Pin Freq=250MHz Vds=28Vdc Idq=200ma

s8200

Contextual Info: S8200 Linear LED Driver IC Description The S8200 is an integrated adjustable constant-current source, driving loads up to 150mA, The output current level can be adjusted via an external resistor. The integrated SHDN input of the S8200 permits LED brightness

Contextual Info: BURR - BROW N S820 „j^ ssg ^ ses-10-Bit, 20MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES The A D S820 is a low power, monolithic 10-bit, 20MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes

OSLNF50A-8

Contextual Info: Quick Fact Sheet Site Master S820E Microwave Cable and Antenna Analyzer S820E Setting the standard for 15 years 1 MHz to 8, 14, 20, 30, and 40 GHz Anritsu set the standard in 1999 with the world’s first 18 GHz broadband Site Master. 15 years later Anritsu has set a new standard for performance and accuracy in a portable

UG-136B

Abstract: 26UA42 23UA90
Contextual Info: Technical Data Sheet Microwave Site Master Cable & Antenna Analyzer Featuring Classic and Advanced Modes S820E 1 MHz to 8 GHz, 14 GHz, 20 GHz, 30 GHz, 40 GHz Introduction Anritsu is proud to introduce the world’s most advanced Site Master. With microwave frequency coverage up to 40 GHz,

158A

Abstract: TB158A S8201 10NF 47PF 47UF C164 KS-8201
Contextual Info: R F in C15 2 .4 P F C16 4 .3 P F 2 2 A W G 1 in c h L8 HP C17 10NF 28Vdc, 400m a P 1 d B = 1 .5 W 1 0 0 -1 0 0 0 M h z T B -1 5 8 , S 8 2 0 1 D4 10M A R7 2 .2 K D6 10M A D5 7 .5 V C18 8 .2 P F R6 150 C24 10NF 22AW G 4 tu rn s R 9 2 .2 K S8201 L9 HP L10 HP

S8200

Abstract: SDB1040 MARKING RFB
Contextual Info: S8200 Semiconductor Linear LED Driver IC ◈ Description The S8200 is an integrated adjustable constant-current source, driving loads up to 150mA, The output current level can be adjusted via an external resistor. The integrated SHDN input of the S8200 permits LED brightness

Schematic Diagrams

Abstract: S850 S-850
Contextual Info: 5 Schematic Diagrams and PCB Silkscreen D C B A C B A 5-42 3 4 4 3 2 2 1 1 D 5-1-4 PCB Silkscreen S820/S850 D C B A C B A S820/S850 3 4 4 3 2 2 1 1 D 5 Schematic Diagrams and PCB Silkscreen 5-43

S8202

Abstract: VDMOS TRANSISTOR S2A SP202
Contextual Info: polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

OSLN50A-8

Contextual Info: Technical Data Sheet Microwave Site Master Cable & Antenna Analyzer + Vector Network Analyzer Featuring Classic and Advanced Modes S820E 1 MHz to 8 GHz, 14 GHz, 20 GHz, 30 GHz, 40 GHz Introduction Anritsu is proud to introduce the world’s most advanced Site Master. With microwave frequency coverage up to 40 GHz,

S8201

Abstract: TRANSISTOR S2A
Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

D1010 equivalent

Contextual Info: B U R R - BRO W N S820 10-Bit, 20MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES The A D S820 is a low power, monolithic 10-bit, 20M Hz analog-to-digital converter utilizing a sm all geometry CMOS process. This COMPLETE converter includes

ES1978S

Abstract: 1646T00 ATI Rage lt Pro lucent 1646t00 LM4863 D es1918 443BX PAC1284 s820 CK97-M
Contextual Info: S820/S850 SA 2 CNTL 4 SD(7:0) Touch Pad KBD FIR CNTL 3 *in the CODEC BOARD PS/2 I/F SIO RS232C MAX211 PC97338VJG PIO ESD FILTER PAC1284 2 LED BOARD FROM HDD FDD CD-ROM MICOM CD-AUDIO External FDD Pack S820: Flex ZV - AUDIO PCI BUS UNIT SUB CHIP MAIN CHIP

S8201

Abstract: VDMOS
Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 8 Watts Single Ended

Contextual Info: S8200 Semiconductor Linear LED Driver IC ◈ Description The S8200 is an integrated adjustable constant-current source, driving loads up to 150mA, The output current level can be adjusted via an external resistor. The integrated SHDN input of the S8200 permits LED brightness

S8200

Abstract: S-8200 MARKING RFB
Contextual Info: S8200 Linear LED Driver IC ◈ Description The S8200 is an integrated adjustable constant-current source, driving loads up to 150mA, The output current level can be adjusted via an external resistor. The integrated SHDN input of the S8200 permits LED brightness

Contextual Info: TMS29F040 524288 BY 8-BIT FLASH MEMORY S820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040