S9013 NPN Search Results

S9013 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

S9013 NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
s9013 transistor Abstract: Transistor S9013 S9013 S9013 equivalent 0625W 112166 data sheet transistor s9013 S9013 to-92 s9013transistor S9013 TO92 Contextual Info: S9013 S9013 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃	Original	S9013 500mA 30MHz s9013 transistor Transistor S9013 S9013 S9013 equivalent 0625W 112166 data sheet transistor s9013 S9013 to-92 s9013transistor S9013 TO92	PDF
Contextual Info: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9013-G S9013-H S9013-I 625Watts -55OC S9013	PDF
S9013H Abstract: s9013g npn Transistor Contextual Info: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9013-G S9013-H S9013-I 625Watts -55OC S9013 100uAdc, S9013H s9013g npn Transistor	PDF
S9013H Abstract: Transistor TO-92 S9013H S9013G Contextual Info: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9013-G S9013-H S9013-I 625Watts -55OC S9013 S9013H Transistor TO-92 S9013H S9013G	PDF
S9013H Abstract: transistor s9013h S9013G s9013g npn Transistor Transistor TO-92 S9013H Contextual Info: MCC S9013-G S9013-H S9013-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9013-G S9013-H S9013-I 625Watts -55OC S9013 100uAdc, S9013H transistor s9013h S9013G s9013g npn Transistor Transistor TO-92 S9013H	PDF
S9013H Abstract: s9013g npn Transistor S9013G Contextual Info: MCC S9013-G S9013-H S9013-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9013-G S9013-H S9013-I 625Watts -55OC S9013 100uAdc, S9013H s9013g npn Transistor S9013G	PDF
Contextual Info: \| FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW	OCR Scan	S9013 S9012 500mA 100uA 500mA	PDF
s9013 transistor Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR	Original	S9013 S9012 500mA 500mA, 30MHz S9013 s9013 transistor transistor S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR	Original	S9013 S9012 500mA 500mA, 30MHz	PDF
S9013 Abstract: S9013 TO92 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR	Original	S9013 S9012 500mA 500mA, 30MHz S9013 S9013 TO92	PDF
s9013 transistor Abstract: S9013 transistor S9013 f-30MHz transistor s9012 Contextual Info: S9013 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage	Original	S9013 S9012 500mA 500mA, 30MHz s9013 transistor S9013 transistor S9013 f-30MHz transistor s9012	PDF
s9013 transistor Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3	PDF
S9013 SOT-23 Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23 Contextual Info: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units	Original	S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23	PDF
S9013 J3 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3	PDF

Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.	Original	S9013 500mAï S9012. 300mW) OT-23 BL/SSSTC082	PDF
J3 s9013 Abstract: S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23 Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.	Original	S9013 500mA S9012. 300mW) OT-23 BL/SSSTC082 J3 s9013 S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-23 S9013 S9012.	PDF
S9013 Abstract: S9013 SOT-23 s9013 transistor datasheet Contextual Info: S9013 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 3.040 B 1.200 1.400 C 0.890 1.110 2 Emitter L 3 Tj, Tstg : - 55 C ~ + 150 C	Original	S9013 OT-23 500mA 30MHz 01-Jun-2005 S9013 S9013 SOT-23 s9013 transistor datasheet	PDF
transistor TO-92 S9013 Contextual Info: TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range	Original	S9013 500mA 30MHz transistor TO-92 S9013	PDF
59013 Abstract: S9013 s9013 transistor IC-500 Contextual Info: 1 S9013 couxcToq NPN General Purpose Transistors % - v€ v2 SOT-23 ri/nrrR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOItage Collector Current-Continuous Symbol V a lu e V CEO VCBO 25 lc Total Device Dissipation FR-5 Board 1)	OCR Scan	TA-25t TA-25 S9013 59013 s9013 transistor IC-500	PDF
S9013 equivalent Abstract: Transistor S9013 s9013 transistor S9013 s9013 transistor datasheet S9013 data sheet data sheet transistor s9013 S9013 NPN Transistor transistor TO-92 S9013 Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V	Original	S9013 625Watts -55OC 500mAdc, 50mAdc) 100mAdc) S9013 equivalent Transistor S9013 s9013 transistor S9013 s9013 transistor datasheet S9013 data sheet data sheet transistor s9013 S9013 NPN Transistor transistor TO-92 S9013	PDF
transistor S9013 Abstract: S9013 to-92 s9013 transistor S9013 equivalent S9013 S9013 data sheet data sheet transistor s9013 Contextual Info: S9013 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURE Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.5 A Collector-base voltage V (BR)CBO :40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C	Original	S9013 100uA transistor S9013 S9013 to-92 s9013 transistor S9013 equivalent S9013 S9013 data sheet data sheet transistor s9013	PDF
S9013 Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9013 625Watts -55OC 100uAdc, S9013	PDF
Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components S9013 Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9013 625Watts -55OC S9013 100uAdc,	PDF

S9013 NPN Search Results

S9013 NPN Result Highlights (5)

S9013 NPN Datasheets Context Search

s9013 transistor

S9013H

S9013H

S9013H

S9013H

s9013 transistor

S9013

s9013 transistor

s9013 transistor

S9013 SOT-23

S9013 J3

J3 s9013

S9013

transistor TO-92 S9013

59013

S9013 equivalent

transistor S9013

S9013