S9G66A Search Results
S9G66A Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| S9G66A |
|
FET, Microwave Power GaAs FET Transistor, ID 1.4 A | Scan | 81.49KB | 2 | |||
| S9G66A |
|
MICROWAVE POWER GaAs FET | Scan | 81.49KB | 2 |
S9G66A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TO SH IBA M I C R O WA V E P O W E R GaAs FET MICROW A VE SEMICONDUCTOR S9G66A T E C H N IC A L D A T A FEATURES •HIGH ■NON-MATCHED POWER P1dB=30.5dBm ■ HIGH at 2. 7GHz ■HERMETICALLY GAIN G1dB=12dB T YPE at SEALED PACKAGE 2 . 7 GHz RF PERFORMANCE SPECIFICATIONS |
OCR Scan |
S9G66A | |
S9G66AContextual Info: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB |
OCR Scan |
S9G66A S9G66A |