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    S9G73 Datasheets (1)

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    S9G73 Toshiba Microwave Power GAAS Fet Scan PDF

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    S9G73

    Abstract: No abstract text available
    Text: MI CROWAVE P O WE R GaAs FET MICROWAVE SEMICONDUCTOR T E C H N I C A L DATA S9G73 Pr I i m i n a r y •HIGH POWER «NON-MATCHED TYPE P1dB=40dBm ■ HIGH G AI N «HERMETICALLY SEALED PACKAGE G1dB=13dB 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB


    OCR Scan     		S9G73 40dBm S9G73 PDF

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    Abstract: No abstract text available
    Text: MI CROWAVE P O W E R GaAs FET MICROWAVE SEMICONDUCTOR T E C H N I C A L DATA S9G73 Pro I •HI GH POWER «NON-MATCHED imi nary TYPE P1dB=40dBm ■ HIGH GAI N «HERMETICALLY SEALED PACKAGE G1dB=13dB 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB


    OCR Scan     		S9G73 40dBm PDF