SA10S Search Results

SA20S

Abstract: SA20 SAI25S SA20S2 SA-20 SA10 SA14 SA14S2 34000
Contextual Info: ì Non Adjustable Shock Absorbers Series SAIO SA10S S A I2 SA14 SA14S SA14S2 SA20 SA20S SA20S2 SAI25 SAI25S SAI25S2 Impact speeds 0.3 - 4.5 m /s 0.15 - 2.2 m /s for SA10 Series Operating Temperature Range -4 0 - +82°c ( - 1 0 - +70°c for SA 10 Series)

torque

Abstract: delta phase angle SA10S20N SA10S20N-001 GCM2
Contextual Info: SA10S20N-001 Specifications ITEMS UNIT SA10S20N-001 Step Angle Degree 18 Number of Phase Phase 4 Drive System - Bipolar Voltage V 5 Winding Resistance Ohm 20 Detent Torque g-cm 3 Holding Torque g-cm 20 Rotor Inertia g-cm2 0.03 Weight g Approximately 5 Characteristics

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

nec 765 fdc

Abstract: W83877ATF W83877AF W83877F PC97 RECS-80 APM 2510 irsl200 NEC marking 8215 date code
Contextual Info: W83877ATF WINBOND I/O W83877ATF Data Sheet Revision History Pages Dates Version 1 n.a. 07/29/97 0.50 2 1,3,6,49,50,98,140, 141,142,170 04/10/98 0.51 Version on Web Main Contents First published. A1 Typo correction and data calibrated 3 4 5 6 7 8 9 10 Please note that all data and specifications are subject to change without notice. All

LM320A

Abstract: SD13 SD14 SD15 SN74LV4320A SN74LV4320AGKFR A10-A00 D07-D00 SCE1
Contextual Info: SN74LV4320A LOWĆPOWER, DUALĆSUPPLY, LEVELĆTRANSLATING CompactFlash INTERFACE WITH 16ĆBIT DATA, 11ĆBIT ADDRESS, AND 13ĆBIT CONTROL LINES SCES628 − APRIL 2005 D Member of the Texas Instruments D D D D D Ioff Supports Partial-Power-Down Mode Widebus+ Family

L323C

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

GC102

Abstract: 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406
Contextual Info: G-TUO -CE} INC D 5 D E I 3 7 7 7 4 7 S OGGOOt ,4 S I i i u i u i 7v ; c i o 2 12/16MHz PC/AT Compatible C h ip set Features Description • Highly Integrated PC/AT Com­ patible Three Chip Set. The GC101/GC102 is a fully IBM PC/AT compatible chip set support­

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while

MAKING CODE 1H sod

Contextual Info: TMS34094 ISA BUS INTERFACE S PV S 006A - FEBRUARY 1992 - REVISED JUNE 1992 • Simplifies Design of High-Performance ISA PC Graphics Systems • Single-Integrated Circuit Interfaces TMS34020 to ISA Bus • Conforms to ISA Portions of the EISA Rev. 3.11 Specifications

Contextual Info: TMS34094 ISA BUS INTERFACE S P V S 0 0 6 A -F E B R U A R Y 1 9 9 2 - R E V IS E D JU NE 1992 160-PIN PC PLASTIC QUAD-FLAT PACKAGE EIAJ (TOP VIEW) Simplifies Design of High-Performance ISA PC Graphics Systems 160 Single-Integrated Circuit Interfaces TMS34020 to ISA Bus

M410000002

Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Contextual Info: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

CA 324G

Abstract: DL322 DL323 DL324
Contextual Info: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES

DL161

Abstract: DL162 DL163 AM29DL164DT M4200
Contextual Info: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AMD marking CODE flash AM29DL323DB

Abstract: AM29DL32XD 56-Pin S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J
Contextual Info: Am29DL322D/323D/324D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.

DL162

Abstract: DL163
Contextual Info: A29DL16x Series 16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only, Preliminary Simultaneous Operation Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 History Issue Date Initial issue

Contextual Info: A82DL16x4T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit

DL162

Abstract: DL163
Contextual Info: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

EN29SL160

Abstract: cFeon EN
Contextual Info: EN29SL160 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all

Contextual Info: W83877F WINBOND I/O GENERAL DESCRIPTION One of Winbond's popular series of I/O chips, the W83877F integrates a disk drive adapter, serial port UART , parallel port, IDE bus interface, and game port decoder onto a single chip. The W83877F is an enhanced version of the W83777F, with additional powerful features such as configurable plug-andplay registers for the whole chip and infrared support in one of the serial ports.

ns032j0lbjw00

Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
Contextual Info: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

DL322

Abstract: DL323 DL324 M41000002R
Contextual Info: Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL322

Abstract: DL323 DL324
Contextual Info: Am49DL32xBG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — M inimizes system level power requirem ents ■ M anufactured on 0.35|xm process technology