SA2 AY DIODE Search Results

Z32 Zener

Abstract: HV-2405E 50mA fuse 15Vrms-275Vrms E1308 20L DIODE ZENER 2405e 2N2222 HV3-2405E-5 HV3-2405E-9
Contextual Info: HV-2405E September 1998 World-WideSingle Chip Power Supply File Number 2487.6 Features T he H V-2405E is a single chip off line pow er su p p ly that Direct AC to DC C onversion con verts w o rld w ide AC line volta ge s to a regulated DC W ide Input Voltage R a n g e . 1 5 V rm s-27 5V rm s

Contextual Info: AMD£I FINAL Am29F100T/Am29F1OOB 1 Megabit 131,072 x8-bit/65,536 x16-bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ ■ — Automatically programs and verifies data at

Contextual Info: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

29F200

Abstract: HY29F200T
Contextual Info: mV *• Y II M n A I ■ l i ■■ ■■ » 1 ■ HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEYFEATURES • 5.0 V 1 10% Read, Program, and Erase • - Minimizes system-level power requirements • - RY//BY output pin for detection of

Contextual Info: PENTIUM II XEON PROCESSOR AT 400 MHZ • Binary compatible with applications running on previous members of the Intel microprocessor family ■ Optimized for 32-bit applications running on advanced 32-bit operating systems ■ ■ ■ Single Edge Contact S.E.C. cartridge

TRANSISTOR ST25A

Abstract: ST25A transistor intel 4362 al microprocessor superset system design Pentium II Xeon BUT13 wintel ST25A
Contextual Info: PENTIUM II XEON PROCESSOR AT 400 AND 450 MHZ • Binary compatible with applications running on previous members of the Intel microprocessor family ■ Optimized for 32-bit applications running on advanced 32-bit operating systems ■ Dynamic Execution micro architecture

29F200AB

Abstract: 29f200at 29F200A da1048 29F200
Contextual Info: PRELIMINARY AMDB Am 29 F 200 AT/Am 29F 200 AB 2 M e g a b i t 2 6 2, 14 4 x 8 - B i t /1 3 1 ,0 7 2 x 16-Bit C M O S 5.0 Volt-only, S e c t o r E r a s e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • 5.0 V ± 1 0 % for read and wri te o p e r a t i o n s

a114 os hen nec

Abstract: apic S15 b154 sam la 8155 intel microcontroller architecture transistor b143 e.s A15-3P a45 dc he nne Pentium II Xeon DIODE 8137 DB83
Contextual Info: PENTIUM II XEON PROCESSOR AT 400 MHZ • Binary compatible with applications running on previous members of the Intel microprocessor family ■ Single Edge Contact S.E.C. cartridge packaging technology; the S.E.C. cartridge delivers high performance

AM29F040A

Abstract: 17113D-4 AMD date code 29f040 Am29F040
Contextual Info: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards

zener diode 68v

Contextual Info: HV-2405E Semiconductor September 1998 PBÄ World-WideSingle Chip Power Supply The H V-2405E is a single chip off line power supply that converts world wide A C line voltages to a regulated DC voltage. The output voltage is adjustable from 5V qq to 24V qq with an output current of up to 50m A. The HV-2405E

cvbs video frame grabber

Abstract: digital cvbs pattern LM385-1.2 SCL SDA VSYNC HSYNC PXCK image TMC2072 TMC2081 TMC22071 TMC22071A "frame grabber"
Contextual Info: F A I R O H 11—P S E M IC O N D U C T O R www.fairchildsemi.com tm TMC2072 Genlo ckin g Video Digitizer Description The TM C2072 Genlocking Video Digitizer samples and quantizes standard analog baseband composite NTSC or PAL video into its 8-bit digital equivalent. It extracts

AM29F010

Abstract: amd 29F010 flash memory 29f010 29F010 DIP AM29F01055 Am29F010-120JC M29F010 Am29F010 Rev A
Contextual Info: FIN A L Am29F010 Advanced 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards

29F800T

Abstract: 29F800 code 29F800 amd 29f800 Am29F800T
Contextual Info: A D V A N C E IN F O R M A T IO N Am29F800T/Am29F800B AdVMi^ 8 Megabit 1,048,576 x 8-Blt/524,288 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

a65 dow the ne

Abstract: a88 t17 her ne transistor b143 e.s RJ80530
Contextual Info: PENTIUM III XEON PROCESSOR AT 600 MHz to 1 GHz with 256KB L2 Cache Datasheet Product Features § § § § Binary compatible with applications running on previous members of the Intel microprocessor family Optimized for 32-bit applications running on advanced 32-bit operating

Contextual Info: •HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands

Contextual Info: AMD£I Am29F010 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Sector protection — Minimizes system level power requirements ■ — Hardware method that disables any combination

JD 1803

Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104
Contextual Info: High-Frequenty Analog Integrated Cirtuit Design Edited by R a v en d er G oyal W ILEY SERIES IN MICROWAVE AND OPTICAL ENGINEERING K a i Chang Series Editor , INSUME OF MICROELECTRONICSUBßARY High-Frequency Analog Integrated-Circuit Design W ILEY SERIES IN MICROWAVE AN D O PTICAL

Contextual Info: HB52C88EM, HB52C89EM, HB52C168EN, HB52C169EN 64 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus HB52C88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52C89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus

Contextual Info: «HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands

6b90

Contextual Info: FLASH MEMORY CMOS 1 6 M 2 M X 8 BIT M M L .V Ö 16 B - 9 0 - 1 2 FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs • Compatible with JED EC-standard world-wide pinouts

GP129

Abstract: tl 8709 p 10KMA CP2211 jl audio 500 1 schematics s3 via Twister IC FP014 FP020 s3 twister K rosan
Contextual Info: MODEL: 7170 Revision OA Contexts Title Page Cover Sheet 1 System Block Diagram 2 Power Block Diagram 3 Central Processor Unit 4 CPU Decoupling Capacitor & VTT Termination Resistor 5 North Bridge VIA TW ISTER Partial 1 6 North Bridge (VIA TWISTER ).PartiaI II

Contextual Info: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements

7769

Abstract: ta 7769 320C10
Contextual Info: 06 7769 LC?M Aialog I/OPort ÆD ANALOG DEVICES FEA TU R ES T w o -C h a n n e l, 8-Bit 2.5 jis A D C T w o 8-Bit, 2.5 (jis D A C s w ith O utp u t A m p lifie rs Sp a n and O ffset of A D C and D A C F U N C T IO N A L B L O C K D IA G R A M AGND IADC AGNO (DAC)

Contextual Info: HB52E88EM-D, HB52E89EM-D, HB52E168EN-D, HB52E169EN-D 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M x 8 Components) (HB52E89EM) 8-Mword x 72-bit, 1-Bank Module (9 pcs of 8 M x 8 Components) 128 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus