SAMSUNG HV CAPACITOR Search Results

ka7905

Abstract: KA7905 samsung
Contextual Info: KA7 9 X X ELECTR ONICS Industrial 3-TERMINAL 1A NEGATIVE VOLTAGE REGULATORS The KA79XX series of three-terminal negative regulators are available in TO-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current limiting,

BC Z5U 1KV

Abstract: kyocera hc1 hr 8445 B37941K5103K062 GRM21BR71H103KA01L Fenghua safety capacitors 0805X7R103KT2AT Fenghua 2A104K a88 w02
Contextual Info: Manufacturer’s Cross Reference and Multilayer Ceramic Chip Capacitor Part Numbering P.O. Box 5928 Greenville, SC 29606 Phone 864 963-6300 Fax (864) 963-6652 www.kemet.com F3068H 10/05 KEMET Includes Commercial, High voltage, Open mode, COTS, Medical, and Military

Contextual Info: CMOS VIDEO RAM KM424C256A 256KX4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port S12 x 4 bits SAM port • Performance range: Item RAM RAM RAM RAM SAM SAM RAM SAM RAM • • • • • • • • • • • • access time tRAc

samsung p28

Contextual Info: K S O l 19 Multimedia ELECTRONICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels

Contextual Info: KSOl19Q2 Multimedia ELECTRO NICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels

KMM584000A

Abstract: km41c4000aj
Contextual Info: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KMM584000A consist of eight KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

KMM581000N8

Contextual Info: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs

Contextual Info: KA7 9LXXAZ ELECTRONICS Industrial 3-TERM INAL 0.1A NEGATIVE VOLTAGE REGULATORS These regulators employ internal current limiting and thermal - shutdown, making them essentially in­ destructible. FEATURES • Output current up to 100mA • No external components

41C1000

Abstract: KMM591000AN 41C1000BJ
Contextual Info: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

Contextual Info: SAMSUNG SEMICONDUCTOR INC 11 Ï E 1 71^4142 ODDBbb11! KMM411024/KMM511024 KMM411025/KMM511025 *i 1~~ SAM SUNG Semiconductor Preliminary IMeg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION The Samsung KM M 4U024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

KM41C257-10

Contextual Info: KM41C257 CMOS DRAM 256K x 1 Bit C M O S Dynamic R AM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C257 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its

Contextual Info: KA7 8M XX ELECTRONICS Industrial 3-TERMINAL 0.5A POSITIVE VOLTAGE REGULATORS The KA78MXXC/I series of three-terminal positive regulators are avail­ able in the TO-220 package with several fixed output voltages making it useful in a wide range of applications.

KA7905

Abstract: 1N400I KA79XX KA7912 FC53 ka7905 regulator
Contextual Info: KA79XX C l C f* ELECTRONICS Industrial 3-TERM INAL 1A NEGATIVE V O LTA G E REG U LA TO RS Th e KA79XX se rie s of three-terminal negative regulators are available in TO -220 package and with several fixed output voltages, making them useful in a wide range of applications. E ach type em ploys internal current limiting,

Contextual Info: KA79MXX I n d u st r ia l 3-TERMINAL 0.5A NEGATIVE VOLTAGE REGULATORS The KA79MXX series of 3-Term inal medium current negative voltage regulators are monolithic integrated circuits designed as fixed voltage regulators. These regulators employ internal current limiting, thermal

594000A

Contextual Info: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: SAMSUNG ELECTRONICS INC 42E » • 7 ^ 4 1 4 2 QG1DSQ7 7 E3SMGK KMM536512B DRAM MODULES i 5 1 2 K X 3 6 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M 536512B- 7 • • • • • • • tR A C tC A C tR C 130ns 70ns

D1377

Abstract: TCA 965 BP KM424C256A
Contextual Info: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)

KMM536256

Contextual Info: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4

Contextual Info: DRAM MODULES KM M532512CV/CVG 512Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532512CV is a512K bit x 32 Dynamic RAM high density memory module. The Samsung KMM532512CV consist of sixteen CMOS 2 5 6 K x4 bit

irp 945

Abstract: KM41C4000AJ 4Mx9 DRAM 30-pin SIMM connector SAMSUNG 30 PIN irp 540 30pin samsung KMM594000A KMM594000A-10 KMM594000A-7 KMM594000A-8
Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E D • 7 = ^ 4 1 4 2 0 0 1 4 5 1 1 S31 I SMGK KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tCAC tRC 70ns 20ns 130ns KMM594000A- 8 80ns 20ns 150ns

km44c1000aj

Abstract: 581000A
Contextual Info: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581OOOAN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM44C1000AJ - 1MX4 in 20-pin SOJ package

samsung roadmap

Abstract: MP6930 MP4050 MP44011 MP6923 HFC0500
Contextual Info: Monolithic Power Systems New Product for ACDC and Lighting Field Date: May 22, 2013 Confidential –Not approved for copy or Distribution The Future of Analog IC Technology ® Agenda: LED Lighting • Product Update of MPS Indoor Lighting – Non-dimming, Non-PFC

KM41C1000

Abstract: KMM591000
Contextual Info: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and