SAMSUNG LRA Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam­ ic RAM high density memory module. The Samsung

Contextual Info: SAMSUNG ELECTRONICS INC b7E » • TTbHlMS DD1SSSL 3bT KM44C258C SHGK CMOS DRAM 262,144x4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its de­

memory samsung

Contextual Info: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

Contextual Info: SAMSUNG SEMICONDUCTOR INC 11 Ï E 1 71^4142 ODDBbb11! KMM411024/KMM511024 KMM411025/KMM511025 *i 1~~ SAM SUNG Semiconductor Preliminary IMeg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION The Samsung KM M 4U024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as

K4S510832C

Abstract: K4S510832 K4S510832C-KL
Contextual Info: K4S510832C CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Nov. 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as

K4S511632C

Contextual Info: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

K4S511632D

Contextual Info: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

S3C2442

Abstract: sc32442 Samsung SC32442 S3C2442B SC32442B SC32442A ARM samsung sc32442B SC32442X SC32442B Users Manual sc32442 PROGRAMMING
Contextual Info: SC32442B USER’S MANUAL Revision 1.2 NOTIFICATION OF REVISIONS ORIGINATOR: Samsung Electronics, SOC Development Group, Ki-Heung, South Korea PRODUCT NAME: SC32442B RISC Microcontroller DOCUMENT NAME: SC32442B User's Manual, Revision 1.2 DOCUMENT NUMBER: EFFECTIVE DATE:

K4H511638J

Abstract: K4H510838J K4H510838J-LC K4H511638J-BC K4H511638J-LC K4H510438J K4H511638JLC
Contextual Info: Rev. 1.1, Feb. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4H510838J

Abstract: K4H511638J
Contextual Info: Rev. 1.11, Aug. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

8 pin ic lm 745

Contextual Info: KMM411024/KMM511024 Ï? ? SAM SUNG KMM411025/KMM511025_ M Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025,

K4S560432C

Abstract: RA12
Contextual Info: K4S560432C CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S560432C CMOS SDRAM Revision History

KM416S8030B

Contextual Info: KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM Revision History

K4S561632C-TC/L75

Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History

KM416S16230

Contextual Info: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May 1999 KM416S16230A CMOS SDRAM Revision History

SAMSUNG TL1L

Contextual Info: Preliminary CMOS SDRAM K4S510432M 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510432M Preliminary CMOS SDRAM

Contextual Info: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Jun 1999 KM416S16230A CMOS SDRAM Revision History

K4S281632I-UC75

Abstract: K4S281632I-UC60 K4S281632I-UI75 K4S281632I 8MB SDRAM K4S281632I-UL75 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75 K4S280832I
Contextual Info: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4S511632M

Contextual Info: Preliminary CMOS SDRAM K4S511632M 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S511632M Preliminary CMOS SDRAM

K4S510832M

Abstract: RA12
Contextual Info: Preliminary CMOS SDRAM K4S510832M 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510832M Preliminary CMOS SDRAM

Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM 3.3V - Super Low Power 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Oct. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Oct. 2001 K4S281632D CMOS SDRAM

Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM Extended Temp Support 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D CMOS SDRAM