Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SAMSUNG NAND FLASH DIE Search Results

    SAMSUNG NAND FLASH DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy

    SAMSUNG NAND FLASH DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG NAND Flash Qualification Report

    Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
    Text: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.


    Original     		PDF 128Mb industria1980 30pcs 48TSOP1 SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0

    Samsung k9f1208u

    Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
    Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.


    Original     		PDF AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    SAMSUNG NAND FLASH

    Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
    Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for


    Original     		PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8

    KLM8G2FE3B

    Abstract: klm8g samsung eMMC 4.5 TLC nand samsung tlc nand flash KLM4G 153 ball eMMC memory SAMSUNG emmc klm8g2 Samsung KLMBG4GE2A
    Text: Samsung eMMC Managed NAND Flash memory solution supports mobile applications FBGA QDP Package BROCHURE Efficiency, reduced costs and quicker time to market Expand device development with capable memory solutions Simplify mass storage designs Conventional NAND Flash memory can be challenging to


    Original     		PDF

    K9F2G08U0C-SCB0

    Abstract: K9F2G08U0C samsung k9f2g08U0C K9F2G08U0C-SCB K9G2G08U0C K9F2G08U0C-BCB0 K9F2G08U0B K9F2G08U0C-B K9G2G08U0 K9F2G08U0C-XCB0
    Text: Rev. 1.0, Jul. 2010 K9F2G08U0C 2Gb C-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F2G08U0C K9F2G08U0B 200us 700us K9F2G08U0C 250us 750us K9F2G08U0C-SCB0 samsung k9f2g08U0C K9F2G08U0C-SCB K9G2G08U0C K9F2G08U0C-BCB0 K9F2G08U0C-B K9G2G08U0 K9F2G08U0C-XCB0

    s3c2410

    Abstract: RISC-Processor s3c2410 Samsung s3c2410 ARM920T memory compiler touch screen samsung NAND FLASH SAMSUNG USB Flash Memory SAMSUNG s3c2410 datasheet S3C2410A
    Text: Samsung S3C2410 World's First ARM-Based Processor with NAND Flash Support Design Innovation for Mobile Computing Samsung's S3C2410 16/32-bit RISC microprocessor is designed to provide a cost effective, low power, small die size and high performance microcontroller solution for hand held


    Original     		PDF S3C2410 S3C2410 16/32-bit 10-bit DS-S3C2410AP-01 RISC-Processor s3c2410 Samsung s3c2410 ARM920T memory compiler touch screen samsung NAND FLASH SAMSUNG USB Flash Memory SAMSUNG s3c2410 datasheet S3C2410A

    samsung k9f2g08U0C

    Abstract: K9F2G08U0C K9F2G08U0C-SCB0 K9F2G08U0B K9F2G08U0C-SCB K9G2G08U0C SAMSUNG 4gb NAND Flash Qualification Report K9F2G08U0C-S K9F2G08U0C-XCB0 K9F2G08U0C-XIB0
    Text: Rev. 0.2, May. 2010 K9F2G08U0C Advance 2Gb C-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F2G08U0C K9F2G08U0B 200us 700us K9F2G08U0C 250us 750us samsung k9f2g08U0C K9F2G08U0C-SCB0 K9F2G08U0C-SCB K9G2G08U0C SAMSUNG 4gb NAND Flash Qualification Report K9F2G08U0C-S K9F2G08U0C-XCB0 K9F2G08U0C-XIB0

    K9K8G08U0D

    Abstract: K9F4G08U0D-SCB0 K9K8G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9K8G08U1D K9F4G08U0D K9XXG08XXD-XCB0 SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1D-SCB
    Text: Rev.1.0, Jun. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D K9F4G08U0D-SCB0 K9K8G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9XXG08XXD-XCB0 SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1D-SCB

    K9K8G08U0D

    Abstract: K9K8G08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08u0d K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010
    Text: Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010

    transistor d528

    Abstract: D528 D529 64mb nand flash samsung NAND Flash DIE
    Text: Back Application Note for NAND Flash April 1998 SAMSUNG ELECTRONICS. Sa ms u n g S i l i c o n w a r e NPP - YWK - 98 - Apr 1 TABLE OF CONTENTS 1. INVALID BLOCK S 5. UTILIZING THE DEVICE IN THE SAME SYSTEM DESIGN 1-1. Identifying Invalid Block(s) 5-1. Pin Assignment(4Mb,8Mb,16Mb,


    Original     		PDF 128Mb 256Mb) 256Mb 100pF transistor d528 D528 D529 64mb nand flash samsung NAND Flash DIE

    movinand

    Abstract: samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash
    Text: Samsung Fusion Semiconductors Samsung Fusion Memory Software Flash DRAM The Next-Generation Technology for High-Performance Mobile Applications SRAM Logic What is Fusion Memory? As consumers continue their insatiable demand for higher-performance, ever-smaller


    Original     		PDF BR-07-MEM-001 movinand samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash

    1584B

    Abstract: 128KB 1e49ch Block1020 2816 memory 2Kb Samsung nand flash 2GB MLC 00FFH F000H 2kb 10072h 0229H
    Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFM1G16Q2A KFN2G16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFM1G16Q2A KFN2G16Q2A 1584B 128KB 1e49ch Block1020 2816 memory 2Kb Samsung nand flash 2GB MLC 00FFH F000H 2kb 10072h 0229H

    Samsung 8Gb MLC

    Abstract: samsung 32GB Nand flash MLC memory lightscribe Samsung 32Gb Nand flash Samsung 8Gb MLC Nand flash SAMSUNG NAND FLASH samsung external dvd writer dvd writer laser diode SATA hard disk for samsung notebook dvd power sata connector
    Text: Samsung Storage Solutions The Broadest Offering Today, from Optical and Hard Drives to Breakthrough Flash Storage Samsung Storage Solutions Data Storage for Any Application Samsung is the world’s second-largest semiconductor manufacturer whose deep expertise in hardware


    Original     		PDF 256MB BR-06-STOR-002 Samsung 8Gb MLC samsung 32GB Nand flash MLC memory lightscribe Samsung 32Gb Nand flash Samsung 8Gb MLC Nand flash SAMSUNG NAND FLASH samsung external dvd writer dvd writer laser diode SATA hard disk for samsung notebook dvd power sata connector

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH
    Text: Multi-Chip Package Technology from Samsung The ultimate memory solution for mobile devices MCPs: New Memory Solution for Today’s Handhelds As the popularity of handheld electronic devices continues to expand, the Best Source for MCPs memory solution of choice for designers of these products has become


    Original     		PDF BR-06-MEM-001 samsung 2GB X16 Nand flash SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH

    RCD 1230 SAMSUNG

    Abstract: ST OneNAND samsung confidential samsung nor flash Flash Memory SAMSUNG OneNAND SAMSUNG NAND Qualification BLOCK37
    Text: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. V CC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~ 2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512/OneNAND1GDDP 512Mb KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB KFH1G16Q2M-DEB KFH1G16D2M-DEB KFH1G16U2M-DIB 63FBGA RCD 1230 SAMSUNG ST OneNAND samsung confidential samsung nor flash Flash Memory SAMSUNG OneNAND SAMSUNG NAND Qualification BLOCK37

    SAMSUNG 256Mb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF OneNAND512Mb KFG1216U2B-xIB6) KFG1216U2B 512Mb 80x11 KFG1216U2B) 63ball SAMSUNG 256Mb NAND Flash Qualification Report

    KFG1216U2B

    Abstract: OneNAND 63FBGA Flash Memory SAMSUNG OneNAND
    Text: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF OneNAND512Mb KFG1216U2B-xIB6) KFG1216U2B 512Mb 80x11 KFG1216U2B) 63ball KFG1216U2B OneNAND 63FBGA Flash Memory SAMSUNG OneNAND

    63FBGA

    Abstract: KFG1216U2B 67-ball samsung "NOR Flash" 512MB
    Text: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF OneNAND512Mb KFG1216U2B-xIB6) KFG1216U2B 512Mb 80x11 KFG1216U2B) 63ball 63FBGA KFG1216U2B 67-ball samsung "NOR Flash" 512MB

    29F2G08

    Abstract: micron 29F2G08AA 29F2G08AA TH58NVG2S3 micron 29F2G08 TC58DVG14B1FT00 TC58DVG04B1FT00 part number decoder toshiba NAND Flash MLC reset nand flash HYNIX hynix 8mb nand flash memory
    Text: ST72681 USB 2.0 HIGH-SPEED 8-BIT MCU FLASH DRIVE CONTROLLER PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations


    Original     		PDF ST72681 512-byte 10MB/s 29F2G08 micron 29F2G08AA 29F2G08AA TH58NVG2S3 micron 29F2G08 TC58DVG14B1FT00 TC58DVG04B1FT00 part number decoder toshiba NAND Flash MLC reset nand flash HYNIX hynix 8mb nand flash memory

    flash 8M8

    Abstract: bare die
    Text: PREDVA FLASH MEMORY DIE KM29U64000K1 8M x 8 Bit NAND Flash Memory FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Voltage Supply : 2.7V ~ 3.6V Organization - Memory Cell Array : 8M + 256K bit x 8bit - Data Register : (512 + 16)bit x8bit


    Original     		PDF KM29U64000K1 528-Byte KM29U64000K1 flash 8M8 bare die

    samsung NAND Flash DIE

    Abstract: 528-byte
    Text: PREDVAN FLASH MEMORY DIE KM29W32000K1 4M x 8 Bit NAND Flash Memory FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Voltage Supply : 2.7V ~ 5.5V Organization - Memory Cell Array : 4M + 128K bit x 8bit - Data Register : (512 + 16)bit x8bit


    Original     		PDF KM29W32000K1 528-Byte KM29W32000K1 samsung NAND Flash DIE

    Untitled

    Abstract: No abstract text available
    Text: PREDVAN FLASH MEMORY DIE KM29U128K1 16M x 8 Bit NAND Flash Memory FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION The KM29U128K1 is an 16M 16,772,216 x8bit Die of NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass


    Original     		PDF KM29U128K1 KM29U128K1 528byte 528byte.

    Samsung Flash

    Abstract: No abstract text available
    Text: PREDVANAdvance Information FLASH MEMORY DIE KM29W32000AK1 4M x 8 Bit NAND Flash Memory FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Voltage Supply : 2.7V ~ 5.5V Organization - Memory Cell Array : 4M + 128K bit x 8bit - Data Register : (512 + 16)bit x8bit


    Original     		PDF KM29W32000AK1 528-Byte KM29W32000AK1 Samsung Flash