SANYO SMALL SIGNAL DIODE Search Results

1ss37

Contextual Info: smm Small-Signal High-Voltage Schottky Barri r Di odes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

SB07

Abstract: sb10-05pcp
Contextual Info: SAßYO Small-Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes CS B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

Contextual Info: SA0YO Smal 1-Signal High-Voltage Schottky Barrier Diodes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

sb30

Abstract: si120
Contextual Info: Smal ¡“Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

EC4302C

Contextual Info: EC4302C Ordering number : EN7035A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4302C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

7014

Abstract: EC4301C E-CSP1008-4
Contextual Info: EC4301C Ordering number : EN7014A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4301C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

EC4401C

Abstract: TA-3277
Contextual Info: EC4401C Ordering number : EN7015A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: EC4401C Ordering number : EN7015A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

EC4303C

Contextual Info: EC4303C Ordering number : EN7036A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4303C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C

EC4403C

Contextual Info: EC4403C Ordering number : EN7038A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4403C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C

EC4402C

Contextual Info: EC4402C Ordering number : EN7037A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4402C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENN7036 ] P-Channel Silicon MOSFET EC4303C ISAf/YOi Small Signal Switch, Interface Applications Package Dimensions Features unit : mm 2197 • Low O N -resistance. ♦ U llrahigh-speed sw itching. . 4V drive. [EC4303C] 0.5 SANYO : E-CSP1008-4

CPH6619

Contextual Info: CPH6619 Ordering number : ENA0473 SANYO Semiconductors DATA SHEET CPH6619 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET

VEC2601

Abstract: A0933
Contextual Info: VEC2601 Ordering number : ENA0933 SANYO Semiconductors DATA SHEET VEC2601 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving

SB01-05QCA

Contextual Info: SA0O S m a l l - S i g n a l H i g h - V o l t a g e S c h o t t k y Barr ier Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

dse010 tr e

Abstract: DS441 AL 360 DS442X DCA010 DCB010 DS446 DS462 AL200 GMA01U
Contextual Info: SAHm Q u i c k G u i d e T o Small afe. V ery F a s t Swi t o h i n g Signal Di o d e s SANYO E lectricC o., Ltd,Semiconductor Business Headquarters, TRDivision. 87 • 7 ^ 7 0 7 b 0013555 E42 ■ Diodes M T9300713TR

Contextual Info: SA0YO Smal 1-Si gnal H i g h - V o l t a g e S c h o t t k y B a r r i r Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

Contextual Info: SAfiYO Power Transistor Surface Mount Package SMP Surface Mount Power In recent years surface mount semiconductor products have found wide application from small-signal consumer equipment to high-power industrial equipment. To meet user needs, we offer Sanyo power transistor surface mount package SMP (Surface Mount Power) that makes possible

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

VS003E4

Abstract: A15201 A1520
Contextual Info: VS003E4 Ordering number : ENA1520 SANYO Semiconductors DATA SHEET VS003E4 SSPD Series Silicon Bidirectional Diode Noise clamp for signal line For low voltage, USB2.0 Features • • • • • Low voltage (4.5V), overshoot clamp. USB2.0 signal line overshoot/undershoot clamp.

VS002E4

Abstract: ECSP1608-4 USB11 marking eb
Contextual Info: VS002E4 Ordering number : ENA1251 SANYO Semiconductors DATA SHEET SSPD Series Silicon Bidirectional Diode VS002E4 Noise clamp for signal line For low voltage, USB1.1 Features • • • • • Low voltage (4.0V) , overshoot clamp. USB1.1 signal line overshoot/undershoot clamp.

Contextual Info: VS003E4 Ordering number : ENA1520 SANYO Semiconductors DATA SHEET VS003E4 SSPD Series Silicon Bidirectional Diode Noise clamp for signal line For low voltage, USB2.0 Features • • • • • Low voltage (4.5V), overshoot clamp. USB2.0 signal line overshoot/undershoot clamp.

Contextual Info: SS2003M Ordering number : EN8345A SANYO Semiconductors DATA SHEET Schottky Barrier Diode SS2003M 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small Switching noise Low forward voltage (IF=2A, VF max=0.40V)

sbx201c

Contextual Info: SBX201C Ordering number : ENA0628B SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ Less parastic components Small forward voltage