84-1LMI
Abstract: No abstract text available
Text: NKD-100-D 4 MILLIMETER-WAVE FREQUENCY DOUBLER MMIC 5GHz TO 24GHz Typical Applications • Narrow and Broadband Commercial and • Upconversion Stage used in MW Radio/ Optical Designs Military Radio Designs • Linear and Saturated Radio Applications GENERAL PURPOSE
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NKD-100-D
24GHz
NKD-100-D
24GHz.
84-1LMI
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Untitled
Abstract: No abstract text available
Text: NBB-302 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-302
12GHz
NBB-302
14GHz
15GHz
20GHz
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Untitled
Abstract: No abstract text available
Text: Self-Cooled High Power Amplifier 50Ω 50W 500 to 1000 MHz Features Applications • • • • • • • • • • • • • • • LZY-2 saturated power 32W typ. high power with low distortion, -45 dBc typ. wide bandwidth, usable 475 - 1050 MHz high gain, 47 dB typ.
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Untitled
Abstract: No abstract text available
Text: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM
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NBB-310
12GHz
NBB-310
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XP1073-BD
Abstract: xp1073 DM6030HK XP107
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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P1073-BD
16-Feb-10
MIL-STD-883
XP1073-BD
XP1073-BD
xp1073
DM6030HK
XP107
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transistor power rating 5w
Abstract: DU2805S transistor Pout 5W B62152A
Text: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices
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DU2805S
918OpF
B62152-AOOOl-X001
transistor power rating 5w
DU2805S
transistor Pout 5W
B62152A
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DU1215S
Abstract: No abstract text available
Text: RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz DU1215S Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications
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DU1215S
DU1215S
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Transistor Equivalent list
Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860
Text: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
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DU2860U
9-18OpF
Transistor Equivalent list
transistor A5G
"RF MOSFET"
DU2860U
300 Amp mosfet
resistor 300 ohms
equivalent transistor rf
mosfet 800 v
DU2860
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20 amp MOSFET transistor
Abstract: MOSFET POWER TRANSISTOR DU2880V
Text: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C
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DU2880V
5-j14
20 amp MOSFET transistor
MOSFET POWER TRANSISTOR
DU2880V
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CA3273
Abstract: SOLENOID 24V DRIVER CIRCUIT 2N5320
Text: CA3273 High-Side Driver April 1994 Features Description • Equivalent High Pass P-N-P Transistor The CA3273 is a power IC equivalent of a P-N-P pass transistor operated as a high-side-driver current switch in either the saturated ON or cutoff (OFF) modes. The CA3273
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CA3273
CA3273
SOLENOID 24V DRIVER CIRCUIT
2N5320
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transistor c 2499
Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499
Text: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
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DU28120T
S-16OpF
DU26120T
transistor c 2499
transistor tj 2499
12OW
capacitor 4 f
XF 020
transistor D 2499
DU28120T
22 pf trimmer capacitor
81 210 W
transistor 2499
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Untitled
Abstract: No abstract text available
Text: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM
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NBB-302
12GHz
NBB-302
10GHz
14GHz
15GHz
20GHz
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Untitled
Abstract: No abstract text available
Text: NBB-500 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-500
NBB-500
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10H124
Abstract: MC10H115 MC10H116 MC10H124 MC10H124FN MC10H124L MC10H124P
Text: MC10H124 Quad TTL-to-MECL Translator With TTL Strobe Input The MC10H124 is a quad translator for interfacing data and control signals between a saturated logic section and the MECL section of digital systems. The 10H part is a functional/pinout duplication of the
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MC10H124
MC10H124
MC10H124L
MC10H124P
r14525
MC10H124/D
10H124
MC10H115
MC10H116
MC10H124FN
MC10H124L
MC10H124P
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jdsu oa 400
Abstract: jdsu laser diode 980 nm diode.18 OA 70 diode JDSU oaa OA400 E2000 JDSU pump jdsu OA 400 series optical amplifier module jdsu oa 400 series optical amplifier
Text: COMMUNICATIONS MODULES & SUBSYSTEMS Compact, Low Cost Single-Channel or Narrow Band Amplifiers OA 400 Amplifier Series Key Features • Compact, MSA compatible package size, 70 x 90 x 12 mm • Small signal gain, ~24 dB • Saturated output power, ~15 dBm
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OA400
498-JDSU
5378-JDSU
jdsu oa 400
jdsu laser diode 980 nm
diode.18
OA 70 diode
JDSU oaa
E2000
JDSU pump
jdsu OA 400 series optical amplifier module
jdsu oa 400 series optical amplifier
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Untitled
Abstract: No abstract text available
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2710TB 5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
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OT-363
UPC2710TB
UPC2710TB
UPC2710T,
UPC2710TB-E3-A
24-Hour
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000
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TIM0910-15L
30dBm
145mA
2-11C1B)
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TLP621 optocoupler
Abstract: q621
Text: SIEMENS DUAL CHANNEL ILD621/621GB ILQ621/621GB QUAD CHANNEL MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • Alternate Source to TLP621 -2/-4 and TLP621GB-2/-4 • Current Transfer Ratio CTR at lp= 5 mA ILD/Q621:50% Min. ILD/Q621GB: 100% Min. • Saturated Current Transfer Ratio (CTRs AT)
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TLP621
TLP621GB-2/-4
ILD/Q621
ILD/Q621GB:
ILD/Q621:
E52744
/Q621/GB
TLP621 optocoupler
q621
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UM9C
Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma
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DDDQS16
2N2242
2N2368
2N2369
2N2369A
2N2410
N2475
2N2481
2N2501
2N2651
UM9C
J 2N930
2N2651
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UDN2596A
Abstract: No abstract text available
Text: 8-CHANNEL SATURATED SINK DRIVERS Low output-saturation voltages at high load currents are provided by UDN2596A and UDN2597A sink driver ICs. These devices can be used as interface buffers between standard low-power digital logic particularly MOS and high-power loads such as relays, solenoids,
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UDN2596A
UDN2597A
14-Line
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2597A
Abstract: 8-CHANNEL SATURATED SINK DRIVERS
Text: 29320.2A 8-CHANNEL SATURATED SINK DRIVERS Low output saturation voltages at high load currents are provided by U D N 2596A and U D N 2597A sink d river ICs. T hese devices can be used as interface buffers between standard low -pow er digital logic particu
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Untitled
Abstract: No abstract text available
Text: 2596 , m , 2597 8-CH ANNEL SATURATED SIN K D RIVERS Low output saturation voltages at high load currents are provided by UDN2596A and UDN2597A sink driver ICs. These devices can be used as interface buffers between standard low-power digital logic particularly
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UDN2596A
UDN2597A
UDN2597A
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transistor 2n3053
Abstract: 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053
Text: 2N3053 PH IL I P S I N T E R N A T I O N A L 5bE ]> A 7 H 0 0 2 b G042Li44 T14 • IPHIN ■ T = 3 ir- t ? SILICON PLANAR TRANSISTOR N-P-N transistor in a TO -39 metal envelope designed fo r medium speed, saturated and non-saturated switching applications for industrial service.
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2N3053
711002b
G042b44
transistor 2n3053
2N3053 NPN transistor
2N3053
SILICON TRANSISTOR 2N3053
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kd 616
Abstract: ana 650 SP10115 SP10116 SP10124 SP1012
Text: S P 10124 PLESSEY ECL 10,000 SERIES SEMICONDUCTORS SP10124 Q U A D T T L T O ECL TRANSLATOR P O S IT IV E LO G IC The SP1012 4 is a quad translator fo r interfacing data and control signals between a saturated log ic section and the ECL section o f dig ita l systems. The SP10124
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SP10124
SP1012
SP10124
kd 616
ana 650
SP10115
SP10116
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