SATURATED SWITCHES Search Results

P-Channel JFET

Abstract: p-channel jfet rf "N-Channel JFET" Amplifiers N-channel JFET HIGH VOLTAGE high current POWER PNP TRANSISTORS JFET
Contextual Info: Section 2 Short Form Specifications NPN High Speed Saturated Switches . 2-3 PNP High Speed Saturated Switches . 2-4

BSX20

Contextual Info: BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

BSX20

Abstract: BSX19 BSX19-BSX20
Contextual Info: BSX19 BSX20 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications.

BSX20

Abstract: BSX19 saturated switches
Contextual Info: BSX19 BSX20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The BSX 19 and BSX 20 are silicon planar epitaxial NPN transistors in Jed ecT O -18 metal case. They are p rim arily intended fo r very high speed saturated switching applications. ABSOLUTE M A XIM U M RATINGS

Contextual Info: FI 3QE ì> m 7121237 QQ31D37 1 • '"P3S-I3' SGS-THOMSON BSX19 BSX20 S 6 S-TH0MS0N HIGH-SPEED SATURATED SWITCHES D E S C R IP T IO N The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated

BSX19

Abstract: BSX20 1s48 bsx 20 G-1945
Contextual Info: BSX19 BSX 20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES T he BSX 19 and BSX 20 are silic o n p la n a r e p ita x ia l NPN tran sisto rs in J e d e c T O -1 8 m etal case. T h e y are p rim a rily in te n de d fo r very high speed saturated s w itc h in g a p p lica tio n s.

Contextual Info: BFR92P Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

marking p1S

Abstract: Q62702-F1488 GMA marking
Contextual Info: BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!

2N2894

Contextual Info: NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS

2N3014 speed transistor

Abstract: 2N3014 2N3014 TO-18
Contextual Info: 2N3014 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3014 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

PW 2N

Abstract: 2N2894 2n320 2N3209
Contextual Info: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023

2N834

Abstract: 2N408 mps834
Contextual Info: Una. *-/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2N834-MPS834 NPN HIGH SPEED SATURATED LOGIC SWITCHES DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTORS PD . 826 mW • TA ' 25°C (MPS834)

2n3013

Contextual Info: 2N3013 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3013 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

BFR92W

Abstract: VSO05561 marking p1S
Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

E 94733

Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

BFR92P

Abstract: 011v1
Contextual Info: BFR92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Transistor BFR

Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
Contextual Info: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code

5N521

Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Contextual Info: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.

BCR108W

Abstract: BFR92W E6327 VSO05561
Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BC303

Abstract: BC303-BC304 BC304
Contextual Info: BC303 BC304 MEDIUM POWER AUDIO DRIVERS DESCRIPTION The BC303 and BC304 are silicon planar epitaxial PNP transistors in TO-39 metal case. They are intended particularly as audio driver stages in commercial and professionnel equipments. In addition they are useful as high speed saturated switches

2n3209

Contextual Info: TELEPHONE: 973 376-2922 20 STERN AVE. (212)227-6005 SPRINQRELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.SA 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case,