SB42205 Search Results

PHA2230

Contextual Info: Aft Bipolar Pulsed Power Module PHA2230-5S 5.0 Watts, 2.20-3.00 GHz, 2 |is Pulse, 10% Duty Features Outline Drawing Designed for Radar and EW Applications Input and Output Matched to 50Q Class C Pulse Operation Gain Sloping Network on Input Absolute Maximum Ratings at 25°C

Contextual Info: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

1N5711 JANTXV

Abstract: 1N5711 JANTX MA4E2835 MA4E2812 MA4E-2303 1N5167
Contextual Info: an A M P com pany General Purpose Axial Lead Glass Packaged Schottky Diodes V 2.00 Features • • • • Case Style 54 Picosecond Switching JANTX/JANTXV Screening Available Low Forward Voltage Drop Low Reverse Leakage Description This family of Schottky diodes have “picosecond” switch­

TRANSISTOR LC80

Contextual Info: Wireless Power Transistor M a PH0810-60 60 Watts, 850-960 MHz Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -32dBc Typ 3rd IMD at 60 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

omni spectra sma

Abstract: transistor n03 PH2856
Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry

C1413

Abstract: T039 package
Contextual Info: Aß N -C h an n e l RF Power MOSFET UF2801K1 1 Watt, 100-500 MHz, 28 V Features • • • • • lD j DMOS Structure Lower Capacitances for Broadband Operation Lower Noise Floor 100 MHz to 500 MHz Operation Common Source T039 Package Configuration Absolute Maximum Ratings at 25°C

ARCO

Contextual Info: H I INC 5 6 4 2 2 1S_M ZA^CDIL ÖS DE I 85D Sb4EEGS 00454 D DDGQ4SM N-CHANNEL ENHANCEMENT-MODE RF POw E r FETs M DV2860T, DV2860U fa C Q * M/A-COM PHI, INC. The DV2860 is a VMOS N-channel enhancement mode RF power FET. This 60W device is ideal for high power final amplifier applications, push-pull or single end­

transistor 45 f 122

Abstract: capacitor 4.7 uF electrolytic capacitor 47 transistor 975
Contextual Info: Avionics Pulsed Power Transistor A ß PH0912-75 Preliminary 75 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration

2N6665

Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed