SCHOTTKY HIGH VOLTAGE Search Results
SCHOTTKY HIGH VOLTAGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GC321AD7LP153KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC331BD7LP473KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC332DD7LP154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC343DD7LQ154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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| GC355DD7LQ334KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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SCHOTTKY HIGH VOLTAGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: WSD751S Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package |
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WSD751S OD-523 OD-523 1000m | |
TSF20U100CContextual Info: TSF20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF20U100C 2011/65/EU 2002/96/EC ITO-220AB D1403005 TSF20U100C | |
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Contextual Info: WSD520S/521S Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 30 VOLTS Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package |
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WSD520S/521S OD-523 OD-523 0WSD520S/521S WSD521S | |
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Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 | |
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Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408022 | |
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Contextual Info: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF2080C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408021 | |
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Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 | |
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Contextual Info: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF2080C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401018 | |
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Contextual Info: TSPB15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSPB15U100S J-STD-020 2011/65/EU 2002/96/EC D1408051 | |
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Contextual Info: TSPB10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSPB10U45S J-STD-020 2011/65/EU 2002/96/EC D1407011 | |
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Contextual Info: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSN520M60 J-STD-020 2011/65/EU 2002/96/EC D1408069 | |
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Contextual Info: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP12U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408044 | |
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Contextual Info: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP20U60S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1312013 | |
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Contextual Info: TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033 | |
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Contextual Info: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401021 | |
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Contextual Info: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1310024 | |
10U45Contextual Info: TSP10U45S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 10U45 | |
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Contextual Info: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408042 | |
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Contextual Info: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSP20U60S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408047 | |
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Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 | |
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Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 | |
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Contextual Info: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
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TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311002 | |
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Contextual Info: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
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TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1407012 | |
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Contextual Info: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 | |