scs thyristor
Abstract: TO72 package
Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage
|
Original
|
PDF
|
NTE239
NTE239
scs thyristor
TO72 package
|
scs thyristor
Abstract: icer capacitor NTE239
Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage
|
Original
|
PDF
|
NTE239
NTE239
scs thyristor
icer capacitor
|
diode sy-170
Abstract: YL-1050 siemens rs 1003 TH-558 electron tube 7527 siemens rs 3060 cj yl 1042 yl 1050 tetrode siemens rs 1002 YL1057
Text: Contents Selection Tables 5 8 Equivalent Transmitter Tubes 15 Symbols and Terms 17 Explanations on Technical Data 21 Data Sheets 37 Early Transmitter Tube Models 412 SCS on the Internet Creating new links er W vice W o rl d As of now you can tie up with Passive Components
|
Original
|
PDF
|
|
TKAL 240
Abstract: TKAL
Text: Æ T SCS-THOMSON ^ 7# MOMitlÊTrGMDÊS GENERAL PURPOSE & INDUSTRIAL HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A «ALTERNISTORS» - BIDIRECTIONAL DEVICES FOR REACTIVE CIRCUITS AND FREQUENCIES UNDER FOR 400 Hz Type VDRM V 100 Arms / Tcase TKAL TKAL TKAL
|
OCR Scan
|
PDF
|
CB-315)
00V/iÂ
CB-260)
TKAL 240
TKAL
|
Thyristor mw 134
Abstract: scs thyristor l1a marking BRY62 Tetrode pnpn
Text: BRY62 J v _ SILICON P-N -P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a m icrominiature plastic package. It is intended for use as a program mable trigger device SCS = silicon controlled switch . Q UICK REFERENCE D A T A
|
OCR Scan
|
PDF
|
BRY62
OT-143.
Thyristor mw 134
scs thyristor
l1a marking
BRY62
Tetrode pnpn
|
BTW69-200N
Abstract: scr 122 btw69200n 69200N LT 7237 SCR 1989
Text: 3ÜE D • 7^237 00314G2 b 'T-zs-n SCS-THOMSON IMiOraOiDOi BTW69-200N -> 1200N s G S-THOMSON THYRISTORS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT EASY MOUNTING ON HEATSINK DESCRIPTION
|
OCR Scan
|
PDF
|
00314G2
BTW69-200N
1200N
BTW69BTW
scr 122
btw69200n
69200N
LT 7237
SCR 1989
|
cb 478
Abstract: CB-480 CB-478 THDG516C
Text: SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A GATE TURN-OFF THYRISTORS GTO Type •t c m A VDRM (V) Vr r m * (V) ■t r m s (A) Tcase (°C) ■t s m (A) Rth (°C/W) Package THDG 224 S THDGT 224 S THDG 225 S
|
OCR Scan
|
PDF
|
CB-480
CB-478
CB-487
1000-M
400-H
1000-H
cb 478
CB-480
CB-478
THDG516C
|
606-4
Abstract: sensitive gate thyristors
Text: / Z T SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL HO [fiì ILi gTO®M(gS MEDIUM POWER THYRISTORS & TRIACS < 100 A THYRISTORS PLASTIC SENSITIVE GATE THYRISTORS Tamb = 25°C Type <0 Vr r m (A See NOTE 4 Arms / Tçonnex. = 25°C TLS 106-05— 6 TLS 107-05— 6
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 0025444 323 « A P X N AMER PHILIPS/DISCRETE BRY62 L7E D 7 V SILICON P-N-P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a microminiature plastic envelope. It is intended for use as a program mable trigger device SCS = silicon controlled switch .
|
OCR Scan
|
PDF
|
BRY62
bbS3T31
|
TYN408G
Abstract: tyn 1225 tyn 682
Text: r Z J SCS-TNOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MogœiiL[iM MôÊi MEDIUM POWER THYRISTORS & TRIACS < 100 A STANDARD THYRISTORS PLASTIC CASE Tamb = 25°C •o Type See NOTE V (A) 4 Arms I T e a s e = 90°C TXN / TYN 054 — VRRM = VDRM 004 Tj = 110°C
|
OCR Scan
|
PDF
|
|
trisil an overvoltage protection device
Abstract: No abstract text available
Text: THDT51 THDT65 SCS-THOMSON im TRISIL FOR SLIC PROTECTION FEATURES • DUAL ASYMETRICAL TRANSIENT SUPPRESSOR ■ PEAK PULSE CURRENT: Ip p = 30 A, 10/1000 |os. . HOLDING CURRENT = 150 m A m in ■ BREAKDOWN VOLTAGE -THDT51 =51 V -TH D T65 = 65 V. . LOW DYNAMIC CHARACTERISTICS
|
OCR Scan
|
PDF
|
THDT51
THDT65
-THDT51
trisil an overvoltage protection device
|
BTW68-200N
Abstract: 1200N T25-17 BTW68-1000N
Text: 3QE ì> r z 7 Ä T# • 7=52^237 00313=10 3 ■ - " T - Z S - n SCS-THOMSON «^ [1L I C T © « S BTW68-200N -> 1200N S G S-TH0MS0N THYRISTORS ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY EASY MOUNTING ON HEATSINK
|
OCR Scan
|
PDF
|
BTW68-200N
1200N
BTW68-1000N/1200N
68-200N
T-25-17
1200N
T25-17
BTW68-1000N
|
ESM thyristor
Abstract: thyristor disc Vrrm 20000 MDF656 esm 2000 thyristor disc Vrrm 2000 mu 86 452 thyristor sgs Thomson Thyristor DFB51 DF 652
Text: / = 7 SCS-THOMSON Ä 7# GENERAL PURPOSE & INDUSTRIAL RülDg|S@II!JCT8@liîOÔËS HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779 b CB-479 CB-450 FAST RECOVERY RECTIFIER DIODES Type V RRM Tj max V <°C) (A) SV 11. F (R) SV 15. F (R) 800— 2000
|
OCR Scan
|
PDF
|
CB-486
DFB51
ESM thyristor
thyristor disc Vrrm 20000
MDF656
esm 2000
thyristor disc Vrrm 2000
mu 86
452 thyristor
sgs Thomson Thyristor
DF 652
|
diode lt 205
Abstract: thyristor 12V 1A
Text: /S T SCS-THOMSON ö^O !MSi(gir^(QM(g§ MDS35 DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d r m = V r r m UP TO 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V{RMS) DESCRIPTIO N The MDS35 family are consist of one rectifier
|
OCR Scan
|
PDF
|
MDS35
MDS35
380ns
diode lt 205
thyristor 12V 1A
|
|
|
transistor 1a16
Abstract: No abstract text available
Text: £ t7 SCS-THOMSON ilL tH O T « ! T D A 2 5 9 3 SYNCHRO AND HORIZONTAL DEFLECTION CONTROL FOR COLOR TV SET LINE OSCILLATOR two levels switching PHASE COMPARISON BETWEEN SYNCHROPULSE AND OSCILLATOR VOLTAGE 0 1 , EN ABLED BY AN INTERNAL PULSE, (better para
|
OCR Scan
|
PDF
|
TDA2593
88M0BS
transistor 1a16
|
F0810MH
Abstract: F0810 L125 FAST SWITCHING scr
Text: i & m - SCS-THOMSON ILI F0810XH FAST SWITCHING SCR fe a tu r es • It RMS = 8 A = 200V to 800V a tq = 20^ts max , V drm DESCRIPTION The F0810xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for high frequency
|
OCR Scan
|
PDF
|
F0810xH
F0810xH
t0220ab
f0810
F0810MH
F0810
L125
FAST SWITCHING scr
|
Thyristor mw 134
Abstract: transistor KIA-70 Emitter Turn-Off thyristor scs thyristor BRY62 TRANSISTOR 1383 LT99 L7E transistor M.H. Transistor 1383 transistor
Text: • bbsa'm □ □25l444 323 ■ APX N AMER PHILIPS/DISCRETE BRY62 L7E ]> SILICON P-N-P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a m ic ro m in ia tu re plastic envelope. It is intended fo r use as a program m able trigger device SCS = silico n co n tro lle d sw itch .
|
OCR Scan
|
PDF
|
25l444
BRY62
OT-143.
BRY62
Thyristor mw 134
transistor KIA-70
Emitter Turn-Off thyristor
scs thyristor
TRANSISTOR 1383
LT99
L7E transistor
M.H. Transistor
1383 transistor
|
DIAC ecg6407
Abstract: ECG6407 ECG6411 ECG6408 DIAC ecg6411 ECG6412 diode TRANSISTOR ECG ECG diac DIAC EQUIVALENT circuit Bidirectional Diode Thyristors
Text: Special Purpose Devices cont'd 4 anode PNP EMITTER <eA ) PNP COLLECTOR NPH BfcSE CATHOOI ÇÂTE PNP BASE NPN <Gc l 6 n p n EMITTER Silicon Controlled Switch (SCS) ECG Typo BVCBO Volts bvebo BVCER Volts h fe Volts Min IGT Max mA -7 0 -7 0 -7 0 0.1 1.0 70
|
OCR Scan
|
PDF
|
ECG239
ECG6415
D0-201
ECG6416
ECG6417
ECG6418
ECG6419
DIAC ecg6407
ECG6407
ECG6411
ECG6408
DIAC ecg6411
ECG6412
diode TRANSISTOR ECG
ECG diac
DIAC EQUIVALENT circuit
Bidirectional Diode Thyristors
|
Untitled
Abstract: No abstract text available
Text: rz 7 SCS-THOMSON PLQ 08 PLQ 1 Ä 7# FAST RECOVERY RECTIFIER DIODES • VERY FAST FORWARD AND REVERSE RE COVERY DIODES S U IT E D FO R ■ SW ITCHING POWER TRANSISTORS DRIVER CIRCUITS SERIES DIODES IN ANTISATURA TION CLAM P SPEED UP DIODE IN DISCRETE DARLINGTON.
|
OCR Scan
|
PDF
|
08/PLQ
|
DIAC ecg6407
Abstract: h06 diode ECG6407 ECG6408 scs thyristor ECG6411 Bidirectional Diode Thyristors DIAC ecg6411 ECG diac ECG6412
Text: Special Purpose Devices cont'd (A ) Ç 4 ANOOE PNP E M IT TE R ft 4 <Ga > PNP COLLECTOR NPN BASE CATHOOI ANODE GATE NPN COLLECTOR ( GC ) > NPN EM IT TE R Silicon Controlled Sw itch (SCS) BVCBO Volts B V e BO Volts BV CER Volts h fe Min IGT Max mA VGT Max
|
OCR Scan
|
PDF
|
ECG239
ECG6415
ECG6416
ECG6417
ECG6418
ECG6419
DO-201
DIAC ecg6407
h06 diode
ECG6407
ECG6408
scs thyristor
ECG6411
Bidirectional Diode Thyristors
DIAC ecg6411
ECG diac
ECG6412
|
mos Turn-off Thyristor
Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
Text: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI
|
OCR Scan
|
PDF
|
|
148-600B
Abstract: 1000B 600B 700B 800B TGF148-600B
Text: 3ÜE J> m 7^2^ 537 GÜ3mDb 3 • rz7 SCS-THOMSON s 6 Ä 7# M œ m iO T « S ^ P 'Z ô -ll s -t h o «To n T G F 1 4 8 -6 0 0 B - * 1 2 0 0 B FAST SWITCHING THYRISTORS ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY EXCELLENT SURGE CAPABILITY
|
OCR Scan
|
PDF
|
TGF148-600B-*
1200B
148-600B
T-25-T7
1000B
600B
700B
800B
TGF148-600B
|
Untitled
Abstract: No abstract text available
Text: SPE C IAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES For Pulse Generating and Switching Applications Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) On Voltage (Volts) Effective Current (Amps) Surge Current (Amps) Holding Current
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SPECIAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES For Pulse Generating and Switching Applications Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) V bo VT Itrms *T SM 'H o ld Pd 6415 395 40 to 60 1.5 1 13 50 850 6416 395 55 to 65
|
OCR Scan
|
PDF
|
L431SSR
|
