SD140 Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SD140UF250B40 TECHNICAL DATA DATA SHEET 4978, Rev - SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • •

SD1400

Abstract: SD1400-03
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1400-03 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS Features • • • • • • • 960 MHz POUT = 14 WATTS 24 VOLTS GP = 9.5 dB MINIMUM GOLD METALIZATION

transistor j42

Contextual Info: SD1400-02 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS Features • • • • • • • 900 MHz 24 VOLTS POUT = 14 WATTS GP = 9.7 dB MINIMUM GOLD METALIZATION 20:1 VSWR CAPABILITY @ RATED CONDITIONS COMMON BASE CONFIGURATION DESCRIPTION: The SD1400-02 is a 24V class C silicon NPN planar transistor

SD1407

Abstract: 1257 transistor
Contextual Info: SD1407 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 125 W/30 MHz • High linear power output

Contextual Info: Part Number Search: Silicon Rectifier Die Product Specifications Silicon Rectifier Dice, Ultra Fast Rectifier Less Than 100ns Product Group: Silicon Rectifier Dice, Ultra Fast Rectifier(Less Than 100ns) View Parametric Table Type Number SD140UF400X50 Suitable

Contextual Info: Ultra Fast Recovery-Silicon Rectifier Die PART NUMBER: SD140UF200X35 CONFIGURATION: less than 100ns METAL SYSTEM:A/B/C SIZE (Mil):140 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 200 Volts MAX. OUTPUT CURRENT IO 25 Amps MAX JUNCTION TEMPERATURE

SD140UF150X35

Contextual Info: Ultra Fast Recovery-Silicon Rectifier Die PART NUMBER: SD140UF150X35 CONFIGURATION: less than 100ns METAL SYSTEM:A/B/C SIZE (Mil):140 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 150 Volts MAX. OUTPUT CURRENT IO 25 Amps MAX JUNCTION TEMPERATURE

8D140

Abstract: SD1400-2 oomils APAA M118 SD1400-02
Contextual Info: M tm mi RF Products RF^Pmducts m - • M icrosem i 140 C o m m erc e Drive M o n tg o m ery ville, PA 18936-1013 18936-1013 Tel: 2 1 5 6 3 1 -9 8 4 0 ^ ^ _ SD1400-2 RF & MICROWAVE TRANSISTORS 860-900MHz CLASS C, BASE STATIONS CLASS C TRANSISTOR FREQUENCY875MHZ

SD1407

Abstract: vk200 VK-200 m174 5004LFL
Contextual Info: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar

HF75-12

Abstract: transistors MRF454 MRF454 SD1405
Contextual Info: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 13 dB Min. @ 30MHz & 75W • Withstands 20:1 Load VSWR

SD1407

Abstract: vk200 VK-200 vk 200 SD140
Contextual Info: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar

SD1407

Abstract: VK-200 vk200 vk 200
Contextual Info: SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar

300 watt hf transistor 12 volt

Abstract: arco 467 sd1405 150 watt hf transistor 12 volt arco 465 60WP 100 watt hf transistor 12 volt arco 463
Contextual Info: SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS COMMON EMITTER IMD −32 dB GOLD METALLIZATION P OUT = 75 W MIN. WITH 13 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1405 BRANDING SD1405 PIN CONNECTION DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon

Contextual Info: fZ 7 S G S -T H O M S O N SD1407 ^ 7 #. K M « « ® « ! RF & MICROWAVE TRANSISTO RS HF SSB APPLICATIONS • . ■ . ■ . 30 MHz 28 VOLTS IMD -30 dB COMMON EMITTER GOLD METALLIZATION p OUT = 125 W MIN. WITH 15 dB GAIN PIN CONNECTION V \ 1 o f JÉ DESCRIPTION

SD1405

Abstract: transistors MRF454 MRF454
Contextual Info: MRF454 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF454 is Designed for 12.5 Volt Power Amplifier Applications up to 30 MHz. FEATURES INCLUDE: • Replacement for SD1405 • PG = 12 dB Min. @ 30MHz & 80W • Withstands 20:1 Load VSWR PACKAGE STYLE .500" 4L FLANGE

Contextual Info: SGS-THOMSON * 71. nn g^@l[SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ ■ . ■ 30 MHz 28 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION . P o u t = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar

Contextual Info: Ultra Fast Recovery-Silicon Rectifier Die PART NUMBER: SD140UF400X50 CONFIGURATION: less than 100ns METAL SYSTEM:A/B/C SIZE (Mil):140 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 400 Volts MAX. OUTPUT CURRENT IO 25 Amps MAX JUNCTION TEMPERATURE

Contextual Info: Ultra Fast Recovery-Silicon Rectifier Die PART NUMBER: SD140UF600X70 CONFIGURATION: less than 100ns METAL SYSTEM:A/B/C SIZE (Mil):140 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 600 Volts MAX. OUTPUT CURRENT IO 25 Amps MAX JUNCTION TEMPERATURE

Contextual Info: Part Number Search: Silicon Rectifier Die Product Specifications Silicon Rectifier Dice, Ultra Fast Rectifier Less Than 100ns Product Group: Silicon Rectifier Dice, Ultra Fast Rectifier(Less Than 100ns) View Parametric Table Type Number SD140UF600X70 Suitable

Contextual Info: Ultra Fast Recovery-Silicon Rectifier Die PART NUMBER: SD140UF150B35 CONFIGURATION: less than 100ns METAL SYSTEM:A/B/C SIZE (Mil):140 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 100 Volts MAX. OUTPUT CURRENT IO 25 Amps MAX JUNCTION TEMPERATURE

TRANSISTOR BV 32

Abstract: transistors MRF454 HF75-12 MRF454 SD1405
Contextual Info: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 18 dB Typical @ 30MHz & 75W • Withstands 20:1 Load VSWR

SD1405

Contextual Info: SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • 30 MHz • 12.5 VOLTS • COMMON EMITTER • IMD 32 dB s ct • GOLD METALLIZATION • POUT = 75 W MIN. WITH 13 dB GAIN u d o M174 epoxy sealed DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon

Contextual Info: Ultra Fast Recovery-Silicon Rectifier Die PART NUMBER: SD140UF300X35 CONFIGURATION: less than 100ns METAL SYSTEM:A/B/C SIZE (Mil):140 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 300 Volts MAX. OUTPUT CURRENT IO 25 Amps MAX JUNCTION TEMPERATURE

SD140UF150A35

Contextual Info: SENSITRON SEMICONDUCTOR SD140UF150A35 TECHNICAL DATA SHEET DATASHEET 4222, Rev- SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: •