SD145 Search Results

SD1455

Abstract: M130
Contextual Info: SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 170 - 230 MHz 25 VOLTS IMD − 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR OPERATION POUT = 20 W MIN. WITH 8.0 dB GAIN

capacitor 100uF 63V

Abstract: 100uf 63v electrolytic capacitor SD1457 Unelco
Contextual Info: SD1457 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 75 W MIN. WITH 10.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1457 BRANDING SD1457 PIN CONNECTION DESCRIPTION

SD1456

Abstract: push pull class AB RF linear TCC3100
Contextual Info: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

Contextual Info: SGS-1H0MS0N SD1457 IEL[ RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF

arco 404

Abstract: arco TRIMMER capacitor CPM13B SD1459 TRIMMER capacitor M164 trimmer 82pf c 1384
Contextual Info: SD1459 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ COMMON EMITTER ■ GOLD METALLIZATION ■ HIGH SATURATED POWER CAPABILITY ■ DIFFUSED EMITTER BALLAST RESISTORS ■ POUT = 20 W MIN. WITH 7.5 dB GAIN

ARCO 100PF

Abstract: SD1457
Contextual Info: SD1457 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF

M130

Abstract: SD1455 sd145
Contextual Info: SD1455 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 25 VOLTS ■ IMD - 55dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ HIGH SATURATED POWER CAPABILITY ■ DIFFUSED EMITTER BALLAST RESISTORS

M111

Abstract: SD1458 sd145
Contextual Info: SD1458 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –55 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ HIGH SATURATED POWER CAPABILITY ■ DESIGNED FOR HIGH POWER LINEAR

CM45-12A

Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
Contextual Info: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA

Contextual Info: SD1451 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: S G 5 Ï . S - 1 H M S 0 N iLKêTGMtgS SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 25 VOLTS IMD - 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR

Contextual Info: S G S - IH O M S O N 5 7 . IU SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS IMD -55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION P o u t = 14 W MIN. WITH 14.0 dB GAIN

Contextual Info: SD1457 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)65 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.150

arco TRIMMER capacitor

Abstract: arco 404 arco TRIMMER capacitor 425 arco 403 CPM13B capacitor 100uF 63V 3 pins trimmer capacitor TRIMMER capacitor 0.5 pF to 80pf TRIMMER capacitor 3 pin TRIMMER capacitor
Contextual Info: SD1459 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . 170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS P OUT = 20 W MIN. WITH 7.5 dB GAIN .500 Dia .550 4L STUD M164

Contextual Info: SD1455 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 25 VOLTS ■ IMD - 55dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ HIGH SATURATED POWER CAPABILITY ■ DIFFUSED EMITTER BALLAST RESISTORS

sd1456

Abstract: TCC3100 push pull class AB RF linear
Contextual Info: SD1456 TCC3100 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS AB PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION

Contextual Info: SD1458 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)140 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SD1451

Abstract: transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave
Contextual Info: S G S— THOMSON ' ” 0 MC~D ?*=1ETE37 aoaaQ7fl 0 SOLID STATE MICROWAVE SD1451 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryvifle, PA 18936• (215? 362-8500« TWX 510-661-7299 2-30 MHz, 12.5 V SSB POWER TRANSISTOR DESCRIPTION The SD1451 is a 12.5 volt epitaxial silicon NPN planar transistor

arco TRIMMER capacitor

Abstract: Arco 403 arco 404 CPM13B arco TRIMMER capacitor 425 capacitor 100uF 63V arco Thomson capacitors lcc M164 SD1459
Contextual Info: SD1459 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . 170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS POUT = 20 W MIN. WITH 7.5 dB GAIN .500 Dia .550 4L STUD M164 epoxy sealed

SD1456

Contextual Info: SD1456 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1456 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System

14 IC

Abstract: circuit sd1458 sd1458 M111 no120111 sgs-thomson *1458
Contextual Info: SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS IMD −55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 14 W MIN. WITH 14.0 dB GAIN

trays STMICROELECTRONICS

Contextual Info: SD1458 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –55 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ HIGH SATURATED POWER CAPABILITY ■ DESIGNED FOR HIGH POWER LINEAR

CPM13B

Abstract: Arco 403
Contextual Info: SD1459 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ COMMON EMITTER ■ GOLD METALLIZATION ■ HIGH SATURATED POWER CAPABILITY ■ DIFFUSED EMITTER BALLAST RESISTORS ■ POUT = 20 W MIN. WITH 7.5 dB GAIN

TCC3100

Abstract: SD1456
Contextual Info: SD1456 TCC3100 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS AB PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION