SD3 SMD Search Results

HEADER16X2

Abstract: SD21 AVDD25 1N4148 SMD borad led sd22 smd transistor SA4 1N4148 SD10 SD12
Contextual Info: 8 7 6 5 4 3 2 1 R1 4.7K GPO6 LINK_O WAKEUP D2 C 1N4148 SMD SD15 SD14 SD13 SD12 SD11 SD10 SD9 SD8 R? 47K R0603 2 + DGND DGND DVDD_3 TEST5 RP2 R6 INT Y1 25MHZ/49US RST X2 X1 TEST5 10K C6 22PF C0603 DGND DGND U2 DM9010/LQFP100 31 29 27 25 23 21 19 17 15 13 11

hs9016

Abstract: EC-MR05-2 r0603 XTAL 25MHZ SD15 SD12 SD13 SD14 C0603 S0603
Contextual Info: 5 4 3 JP1 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE POWER RESET (CHIP SELECT) (IO DATA READ) (IO DATA WRITE) (INTERRUPT JP2 JPx C5 60pF C0603 C6 60pF C0603 IOW# IOR# IO16 IOWAIT CS# CMD INT RST# C4 , C5 , C6 NOISE FILTER Note: Filter IOR# , IOW# , CS# Noise max use 60pF

ph163539

Abstract: 1n4148 smd XTAL 25MHz IOR 451 EC-MR05-2 r0603 DM9000A DM9000A-8 SD13 SD15
Contextual Info: 5 D RST# CS# IOR# IOW# INT LOW LOW LOW LOW HIGH 4 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE 3 JP1 POWER RESET (CHIP SELECT) (IO DATA READ) (IO DATA WRITE) (INTERRUPT ACTIVE) ON OFF ON OFF JP2 : : : : USE USE USE NOT 2 FOR NORMAL SYSTEM JP3 2-3 SHORT , JP4 2-3 SHORT

ph163539

Abstract: 1N4148 SMD r1006 C0805 10uF EC-MR05-2 F.B/120/S0603 SD4 diode ph163539 -davicom DM9000B diode 1N4148 SMD
Contextual Info: 5 D RST# CS# IOR# IOW# INT LOW LOW LOW LOW HIGH 4 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE 3 JP1 POWER RESET (CHIP SELECT) (IO DATA READ) (IO DATA WRITE) (INTERRUPT ACTIVE) ON OFF ON OFF JP2 : : : : USE USE USE NOT 2 FOR NORMAL SYSTEM JP3 2-3 SHORT , JP4 2-3 SHORT

magcom hs9016

Abstract: hs9016 hs9016 magcom lfe8563 LFE8563-DC r0603 DM9000B EC-MR05-2 dm9000bi XTAL 25MHz
Contextual Info: 5 4 3 JP1 ON OFF ON OFF ON OFF JP2 JP7 D RST# LOW CS# LOW IOR# LOW IOW# LOW INT HIGH ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE CHIP RESET) (CHIP SELECT) (IO DATA READ) (IO DATA WRITE) (INTERRUPT IOW# IOR# IO16 CS# CMD INT RST# DGND C6 60pF C0603 JP7 1 JUMPER

ph163539

Abstract: DM9008a r0603 F.B/120/S0603 AVDD25 XTAL 25MHz diode 1N4148 SMD DM9000AE SD10 F.B/120
Contextual Info: 5 D RST# CS# IOR# IOW# INT LOW LOW LOW LOW HIGH 4 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE 3 JP1 POWER RESET (CHIP SELECT) (IO DATA READ) (IO DATA WRITE) (INTERRUPT ACTIVE) ON OFF ON OFF JP2 : : : : USE USE USE NOT 2 FOR NORMAL SYSTEM JP3 2-3 SHORT , JP4 2-3 SHORT

Contextual Info: PCA9646 Buffered 4-channel 2-wire bus switch Rev. 1 — 1 March 2011 Product data sheet 1. General description The PCA9646 is a monolithic CMOS integrated circuit for 2-wire bus buffering and switching in applications including I2C-bus, SMBus, PMBus, and other systems based on

pca9646

Abstract: SD3400 P82B715 PCA9525 PCA9546A PCA9605 TSSOP16
Contextual Info: PCA9646 Buffered 4-channel 2-wire bus switch Rev. 1 — 1 March 2011 Product data sheet 1. General description The PCA9646 is a monolithic CMOS integrated circuit for 2-wire bus buffering and switching in applications including I2C-bus, SMBus, PMBus, and other systems based on

SD27

Abstract: TP711 CSD10 SD318 HEADER16X2 smd transistor SA4 1N4148 SD12 SD13 SD15
Contextual Info: 8 7 6 5 4 3 2 1 SD15 SD14 SD13 SD12 SD11 SD10 SD9 SD8 2 R? 47K R0603 DGND IO16# CMD DVDD_3 TEST5 RP2 INT Y1 25MHZ/49US RST 10K X2 X1 TEST5 C6 22PF C0603 31 29 27 25 23 21 19 17 15 13 11 9 7 5 3 1 512 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 C3 0.1U R3 AVDD_18

XC95144XL-TQ100

Abstract: sd3 32m SMD SOT23 A53 b60 c300 b30 c250 b30 c300 - 1 SMD SOT23 a41 PS224 ferrite B24 XC95144XLTQ100
Contextual Info: A B C D E VCC3V VCC5V VCC3V VCC3V VDD-5V VDD-5V VDD-12V GND HDLED_A HDLED_C IRRXD IRTXD GPIO4 RESETX P09 TCKB TMSB TDO_X TDO_M TCKB TMSB TDO_X TDO_M HDLED_A HDLED_C IRRXD IRTXD TCKB TMSB TDO_X TDO_M GPCSX[3.0] PCBEEP PCBEEP AEN IOWX SD[7.0] SA[15.0] RESETDRV

Contextual Info: INTEGRATED CIRCUITS PCA9544 4-channel I2C multiplexer and interrupt controller Product specification Supersedes data of 1999 Apr 01 Philips Semiconductors 1999 Oct 07 Philips Semiconductors Product specification 4-channel I2C multiplexer and interrupt controller

dm9000 fiber

Abstract: DM9000 DM9000 application SD28 R0603 SD16 SD17 SD18 SD19 DGND
Contextual Info: 8 7 6 5 4 3 2 1 DVDD R18 330 2 R19 330 2 1 1 2 LED3 1 LED SPEED100 2 LED4 1 LED LINK&ACT MDC MDIO SD16 D D +3.3V C25 0.1UF R28 0 R29 0 TXO+ DGND SD[8.15] SD15 SD14 SD13 SD12 SD11 SD10 SD9 SD8 DVDD IO16 SA2 SA4 SA5 SA6 SA7 SA8 SA9 SA2 DVDD INT INT DVDD B DVDD

Contextual Info: WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 64K bytes each

MYT-03A

Abstract: HDR2X5 hdr2x20 2X24 lcd adg smd R2KNL MC405 32.768khz SSOP16W c76 adg C220p-2kV
Contextual Info: 5 4 3 2 1 P3 FLASH & KEYPAD D VCC12V VCC12V VCC5V VCC5V VCC3V PWR_EN OC_SENS1 PORT1_P PORT1_M VCC3V PWR_EN OC_SENS1 PORT1_P PORT1_M SCL_C SDA SCL_C SDA P6 VCC5V VCC5V VCC3V CLK_PCI CLK2PCI CLK_NET VCC3V GPIO4 IDESIORDY IDESDREQ NETWORK LEDACTX LED10LNKX LED100LNKX

capacitor 3KF

Abstract: 2sd82 EMK10 2kd 60
Contextual Info: 超低歪積層セラミックコンデンサ（CFCAP ） SUPER LOW DISTORTION MULTILAYER CERAMIC CAPACITORS CFCAP® OPERATING TEMP. K55VJ125C 特長 FEATURES YNewly developed dielectric material and the use of nickel for internal electrodes provide excellent temperature characteristics with high capacitance,

GRM188F11E104ZA01D

Abstract: M66592FP MAC8 ST-1-1 mac8 hk UBB-4R-D14T-1 GRM1882C1H8R0DZ01D smd diode 8D M66592 GRM2162C1H100JD01D 1P SMD
Contextual Info: REJ11F0001-0102Z M66592FP Utility Board M3A-0038G01 Instruction Manual Notes regarding these materials 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX
Contextual Info: WSF512K16-XXX HI-RELIABILITY PRODUCT 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 100,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture

Contextual Info: WSF128K16-XXX HI-RELIABILITY PRODUCT 128KX16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 35ns SRAM and 70ns (FLASH) ■ TTL Compatible Inputs and Outputs ■ Access Times of 70ns (SRAM) and 120ns (FLASH)

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX
Contextual Info: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES „ Access Times of 35ns SRAM and 90ns (FLASH) „ TTL Compatible Inputs and Outputs „ Access Times of 70ns (SRAM) and 120ns (FLASH) „ Built-in Decoupling Caps and Multiple Ground Pins

Contextual Info: WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  100,000 Erase/Program Cycles  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture  Packaging

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX TWS 434 pin diagram SD3 smd
Contextual Info: WSF128K16-XXX HI-RELIABILITY PRODUCT 128KX16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 35ns SRAM and 70ns (FLASH) ■ TTL Compatible Inputs and Outputs ■ Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

MK212

Abstract: GMK212 MK105 MK107 UMK107
Contextual Info: Notice for TAIYO YUDEN products 1 Please read this notice before using the TAIYO YUDEN products. • Product information in this catalog is as of October 2008. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture