SDF034 Search Results

Contextual Info: SDF034JABVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55

Contextual Info: SDF034JAAVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55

SDF034

Contextual Info: Æ litron 330! E L E C T R O N I C S WAY, TEL: 407 848-4311 PRODUCT DEVICES,INC. W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 FA X: (407) 8 6 3 - 5 9 4 6 N -C H A N N E L ENHANCEM ENT MOS F E T ABSOLUTE MAXIMUM RATINGS PARAMETER Total 60V, SYMBOL D r a i n - s o u r c e Vo I t .(1)

Contextual Info: Æ iltron PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY, WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MÜS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 60V, SYMBOL Drain-source Volt.(l) Drain-Gate Voltage ( R g s = 1•O M n ) (1)

SDF034

Contextual Info: Æ u t r o n , , „ p ir o q u o t â t a lq o N-CHANNEL ENHANCEMENT MOS FET 60V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 11 . 1 VDSS Dra in-Gate Vo 1tage VDGR (Rgs = 1.OMn) (1) Gate-Source Voltage VGS Con t inuous Drain Current Continuous