SE34705470 Search Results

Contextual Info: Reliability IRED Power Dissipation Consideration IRED power output P0 increases with forward current (If). Increasing the forward current also increases power dissipation (P a) and chip junction temperature (T j), resulting in decreased optical power output and device

SE1450

Abstract: SE1470 SEP8505 SEP8506 SEP8705 SEP8706 SE3453
Contextual Info: Reliability IRED Power Dissipation Consideration IRED power output Po increases with forward current (lF). Increasing the forward current also increases power dissipation (Pd) and chip junction temperature (Tj), resulting in decreased optical power output and device

teradyne A360

Contextual Info: Reliability Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study Figure 1 IRED CHIP DEGRADATION STUDIES Honeywell is engaged In an ongoing study of degradation of radiant output over time as a function of temperature for the SEC450 GaAs IRED gallium