SEMICONDUCTOR LASER TYPES FIXED WAVELENGTH Search Results

NX8570SD

Abstract: NX8570*55 transistor NEC D 822 P NX8570SA NX8570SC303-BA NX8570SC307-BA NX8570SC311-BA NX8570SC315-BA NX8570SC318-BA 5291 8-pin
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength monitor function.

ba date sheet

Abstract: NX8571SA NX8571SC303-BA NX8571SC307-BA NX8571SC311-BA NX8571SC315-BA NX8571SC318-BA 10 gb laser diode
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength monitor function.

CD laser pickup assembly

Abstract: laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd
Contextual Info: Numbering System • New Numbering System of Laser Diodes GH 0 65 07 A 2 A Semiconductor laser diode Category 0 : Laser diode, 1 : Frame laser, 2 : Dual wavelength laser Wavelength (63 : 635nm band, 65 : 650nm band, 78 : 780nm band etc.) Optical power output

ZnSe

Abstract: TO8 socket
Contextual Info: Quantum Cascade Laser Front: QCLs Back: Set-up examples with exclusive accessories Quantum Cascade Lasers are semiconductor lasers that offer peak emission in the mid-IR range 4 µm to 10 µm . They have gained considerable attention as a new light source for mid-IR applications such as molecular gas analysis.

500mW 808nm infrared laser diode driver circuit

Abstract: LM358 laser driver SLD323 blue CD laser pickup assembly 2SK405 equivalent 808nm 1W laser diode laser Semicondutor fiber optic Laser diode lm358 lm358 laser current driver DVD optical pick-up assembly
Contextual Info: LASER DI O D E G SONY SEMICONDUCTOR ation U I D E Notes • Responsibility for quality assurance, defect warranties and other items relating to individual transactions shall conform to these sales contracts and other adjunct contracts concluded between the Sony Sales Department or Sony agents and customers.

NX8313UD

Abstract: NX8313UD-AZ PX10160E STM-16
Contextual Info: LASER DIODE NX8313UD 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8313UD is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

CLASS II LASER EN60825-1

Abstract: laser Displacement linear ccd F150-M05L Z500 F150-VM S82K-05024 Z300-KP Z500-SW2T Z500-SW6 laser sensor accuracy
Contextual Info: Profile Measuring System Z500 High-Precision Sensor that Measures and Displays an Object's Profile. Features OMRON's original line beam method provides a complete solution to profile measurement problems. Conventional non-contact measurement of the proifle of an object commonly

Z500

Contextual Info: F502-EN2-04.book Seite 45 Dienstag, 26. Juli 2005 5:48 17 Profile Measuring System Z500 Z500 High-Precision Sensor that Measures and Displays an Object's Profile. Features OMRON's original line beam method provides a complete solution to profile measurement problems.

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

Contextual Info: LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain

Contextual Info: LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain

circuit diagram blood gas analyzer

Abstract: Light Detector laser
Contextual Info: CHAPTER 14 APPLICATIONS Photomultiplier tubes PMTs are extensively used as photodetectors in fields such as chemical analysis, medical diagnosis, scientific research and industrial measurement. This chapter introduces major applications of photomultiplier tubes and describes the principle and

TOSA DWDM

Abstract: TEC TOSA transistor NEC D 587 PX10160E NX8530NH dwdm tosa
Contextual Info: DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8530NH and NX8531NH are 1 550 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode module TOSA

NX6311EH-AZ

Abstract: NX6311EH PX10160E
Contextual Info: LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel

Contextual Info: LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 1.25 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)

Contextual Info: LASER DIODE NX7363JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7363JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

Hamamatsu streak c4334

Abstract: C5094 C1808-03 C4334-01 C4334 C4792 A5760 C4792-01 fluorescence C4780
Contextual Info: PICOSECOND FLUORESCENCE LIFETIME MEASUREMENT SYSTEM C4780 Captures fluorescence phenomena with 5 ps temporal resolution using 2D photon counting method. Enables simultaneous fluorescence lifetime analysis and time-resolved spectrophotometry. 1 Directly captures time variations of laser-excited

Contextual Info: LASER DIODE NX7563JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

nm1680

Contextual Info: LASER DIODE NX7663JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7663JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment

TRACETone

Abstract: Oclaro TL7000ZCD ASP-113466-019 optical modulator driver for Mach-Zehnder module tunable transmitter assembly semiconductor optical amplifier RS232 for modulator 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM optical modulator driver for Mach-Zehnder modulated
Contextual Info: Data Sheet 10Gb/s Tunable Transmitter Assembly TTA TL7000NCD Negative Chirped Modulator TL7000ZCD Zero Chirped Modulator Features: • Full C-Band tunable source (1528.77-1565.49nm) based on OIF iTLA footprint • High power +3dBm EOL (modulated) • High speed electronic tuning control

NX6311EH

Abstract: NX6311EH-AZ PX10160E
Contextual Info: LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel

PX10160E

Contextual Info: LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.

Contextual Info: 997 FIBER SENSORS Ultra High-speed Laser Displacement Sensor HL-C1 SERIES Related Information CCD Style •■General terms and conditions. F-17 ■■Sensor selection guide. P.967~ ■ Glossary of terms / General precautions.P.1397 / P.1405 ■■About laser beam.P.1403~

TLASC0022EA

Contextual Info: Stealth Dicing Technical Information for MEMS 2 Table of Contents 1. Introduction 2. Problems with dicing in MEMS fabrication processes 2.1 Grinding wheel type blade dicing 2.2 Making dicing a completely dry process 3. Stealth dicing technology 3.1 Basic principle of stealth dicing