SEMICONDUCTOR NUCLEAR RADIATION DETECTOR Search Results

Semiconductor Nuclear Radiation Detector

Abstract: Semiconductor Radiation Detector nuclear nuclear radiation detector NR30 220ohms resistor Radiation Detector c.mac nuclear event detector
Contextual Info: LOW POWER NUCLEAR EVENT DETECTOR C-MAC MicroTechnology, in association with MBDA, introduces a low power Nuclear Event Detector NED equipped with the latest materials and technology to mitigate the effect of nuclear weapon outputs. This cutting-edge product detects the event and sets a system

Contextual Info: Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract–Fast-neutron detectors based on high-purity semiinsulating 4H silicon carbide SiC semiconductor have been

Semiconductor Nuclear Radiation Detector

Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
Contextual Info: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each

Contextual Info: UM9441 PIN RADIATION DETECTORS temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no

UM9441

Contextual Info: UM9441 PIN RADIATION DETECTORS KEY FEATURES DESCRIPTION temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on

UM9441

Abstract: FX-25
Contextual Info: PIN RADIATION DETECTORS Features • • • • • • High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voltage Description Silicon PIN devices are effective detectors

Silicon Detector

Contextual Info: Si detectors for high energy particles CHAPTER 10 1 Characteristics 1-1 Active area 1-2 Dark current and junction capacitance 1-3 Response speed 2 Si detectors for scintillator coupling 3 Si direct detectors 3-1 3-2 3-3 3-4 3-5 Thickness of depletion layer

HSU88

Abstract: DSA003636
Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev. 7 Dec. 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

1SS106

Abstract: hitachi rectifier ADE-208-153A 1SS106 diode HITACHI 1SS106 diode hitachi schottky Hitachi DSA00340
Contextual Info: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information

HSD276A

Abstract: diode hitachi schottky DSA003640
Contextual Info: HSD276A Silicon Schottky Barrier Diode for Detector ADE-208-1385 Z Rev.0 Jul. 2001 Features • High forward current, Low capacitance. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code

Hitachi DSA001653

Contextual Info: HSR101 Silicon Schottky Barrier Diode for Various detector, High speed switching ADE-208-080D Z Rev. 4 Sept. 1, 1998 Features • Low forward voltage, High efficiency. • Low reverse current . • Small Resin Package (SRP) is suitable for surface mount design.

HSU88

Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev 7 Dec 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

hitachi rectifier

Abstract: 1SS198 Hitachi DSA00340
Contextual Info: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.

HSC88

Contextual Info: HSC88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-826 Z Rev 0 Nov. 1999 Features • Low capacitance. (C = 0.8pF max) • Low forward voltage. • Ultra small F lat P ackage (UFP) is suitablefor high density surface mounting and high speed assembly.

1S2076A

Abstract: DO-35 BLUE CATHODE HITACHI 1S2076A
Contextual Info: 1S2076A Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-146A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal. Ordering Information

1SS106

Abstract: hitachi rectifier ADE-208-153A HITACHI 1SS106 1SS106 diode ADE-208-153 diode hitachi schottky DSA003640
Contextual Info: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information

1SS286

Abstract: diode hitachi schottky DSA003641
Contextual Info: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A Z Rev. 1 Sep. 1995 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.

HSC88

Abstract: Hitachi DSA0047
Contextual Info: HSC88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-826 Z Rev. 0 Nov. 1999 Features • Low capacitance. (C = 0.8pF max) • Low forward voltage. • Ultra small Flat Package (UFP) is suitablefor high density surface mounting and high speed assembly.

hitachi rectifier

Abstract: 1SS198 diode hitachi schottky DSA003641
Contextual Info: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.

HSD88

Abstract: DSA003640
Contextual Info: HSD88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-1386 Z Rev.0 Jun. 2001 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information

hitachi rectifier

Abstract: HSM198S SC-59A Hitachi DSA0044
Contextual Info: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B Z Rev. 2 Jun. 1993 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.

Hitachi DSA002774

Contextual Info: 1S2076 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-145A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal. Ordering Information

HSR101

Abstract: LF35 diode hitachi diode hitachi schottky
Contextual Info: HSR101 Silicon Schottky Barrier Diode for Various detector, High speed switching HITACHI ADE-208-080D Z Rev. 4 Sept. 1, 1998 Features • Low forward voltage, High efficiency. • Low reverse current. • Small Resin Package (SRP) is suitable for surface mount design.

HSK122

Abstract: HSK4148 hitachi label information Hitachi DSA0047
Contextual Info: HSK4148 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-1503 Z Rev.0 Feb. 2002 Features • Low capacitance. (C = 4.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • LLD package is suitable for high density surface mounting and high speed assembly.