SEMIKRON SK 3 G Search Results

Semikron sK1 04

Abstract: Semikron sk 1/08 semikron sk1 Semikron sk 1 Semikron sk 3- 01 Semikron SK 3 G semikron SKS Semikron sK1 12 SK1G VIRT
Contextual Info: SEMIKRON SEMIKRON INC Ifrm s V rsm V rrm maximum values for continuous operation 3A | 6,7 A (sin. 180, Tref = 105 °C, L = 10 mm) 1,9 A 4,3 A Ifa v V 100 200 400 600 800 1000 1200 SK 1 G 01 Ifav SK1G SK3G " T 'C H - lS S K 3 G 01 S K 1 G 02 SK 3 G 02 SK 1 G 04

Semikron sk 20

Contextual Info: 15E D | SEMIKRON INC fll3tb?L 0001003 a | -T-z.3. o s SEMIKRON Section 10: High Voltage Rectifiers Ifav Ifav Ifn VF N Rthja Tamb Ton Tamb If = 1A =45°C =75°C = 45°C A A A V °c /w VflRM V BR VvBMS Types V V V 6000 7500 2500 H SK E 2500/1100-0,3 8000 10000 3500 H SK E 3500/1550-0,3

Varistoren lebensdauer

Abstract: semikron skpt 25 semikron skpt SKPT 25 SKPT 11 SKPT25A3 SKPT Varistoren bimetall Thyristor Tabelle
Contextual Info: 14.2 SEMIKRON Impulsübertrager Typenschlüssel SK PT 27 a 10 SEMIKRON-Bauelement Pulsübertrager Gehäusegröße Übersetzungsverhältnis a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Typennummer ungefährer ∫ vdt-Wert [µVs]/100 Technische Erläuterungen

thyristor st 103

Abstract: semikron skpt SKPT 11 thyristor TRIGGER PULSE TRANSFORMER Thyristor pulse transformer semikron skpt 25 SKPT Pulse Transformers skpt 16 model of application circuit of thyristor firing bc 331
Contextual Info: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction

Semikron sk 100 dal

Abstract: Semikron sk 50 dal
Contextual Info: S1E D Ô13bb71 □□0303ti 375 SEMIKRON INC s e Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V lc ICM > 1200 V SEMITRANS 3 NPN Power Darlington Modules 150 A, 1200 V 1200 V V SK 150 DB 120 D SK 150 DAL 120 D V A tp = 1 ms 300 A 150 A II

Semikron SK 3 G

Contextual Info: SEMIKRON Fast Recovery Rectifier Diodes Ifrms m axim um values for continuous operation V rsm V rrm Ifav (sin. 10 A 10 A 10 A 1 8 0 ; T re f = 1 0 5 ° C , L= 10 mm; f < 1 kHz) SK3GF SK3GH SK3GL 3 ,8 A 3 ,4 A 3 ,8 A 100 SK3G F01 S K3G H 01 - 200 SK 3 GF 02

Semikron SK 3 G

Abstract: Semikron sk 1/08
Contextual Info: S1E D fllBbL.71 0003032 S1Û se MIKRD n SEMIKRON INC Ifrm s maximum values for continuous operation V rsm V rrm 3A | 6,7 A 1,9 A V 200 400 600 800 1000 1200 Symbol Conditions Ifav 4,3 A SK 1 G 01 S K 1 G 02 SK 1 G 04 SK 1 G 06 SK 1 G 08 SK1 G 10 SK 1 G 12 *

Semikron sk 30 dal

Contextual Info: SIE D • Ö13bb71 0 0 0 3 7 0 0 ä^S « S E K G semikron^inF "— s e m ik r d n Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = —2 V ICM = II II o o m o D. C. lc If > V ebo CM I II LU CÛ VCBO > VCEV Values -lc 1200 V 1200 V 1200 v 7 V 30 A tp = 1 ms

Contextual Info: 51E 3> • Öl3bb71 0GQ37M4 SbO « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus Values Units V 1200 V II o I V VcBO CM 1200 > 1200 II LU CD lc = 1 A, V be = - 2 V VcEV m Conditions > Symbol V ebo lc = 0 7 V lc D. C. 100 A tp = 1 ms 200 A D. C. 100

thyristor st 103

Abstract: MCR-SL-S-1/thyristor st 103
Contextual Info: J.5E D SEMIKRON INC I fll3W,?l GÜOm'iB O I -p a s ^ V drm Itrms maximum values for continuous operation tq 110 A (Tvj V rrm 125 C) V SKFT 40/08 DS 15 20 25 1000 - 40/08 DU 40/10 DT 40/10 DU 40/12 DT 40/12 DU - 20 25 20 25 25 1200 1400 130 A 130 A 110 A

Contextual Info: SK 35 GB 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module SK 35 GB 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

Contextual Info: SK 25 GH 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 3 IGBT module ICRM = 3 x ICnom tpsc V 35 A 29 A 25 A 75 A -20 . 20 V 10 µs -40 . 175 °C

12T4

Contextual Info: SK 25 GH 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 3 IGBT module SK 25 GH 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

Contextual Info: SK 35 GB 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module ICRM = 3 x ICnom tpsc V 44 A 35 A 35 A 105 A -20 . 20 V 10 µs -40 . 175 °C

SKT10/04C

Contextual Info: _J1E I> • fll3bti71 G0034bfci MAT S E rîIK R 0 iT i n c ' V rsm V rrm V drm *L Itrms (maximum values for continuous operation) 30 A Vdt/or | 40 A | 50 A ItAV (sin. 180; Tease = . ,°C) V V V/|1S 500 700 400 600 900 800 200 200 500 200 500 500 200 500

Contextual Info: SIE D Ö13bb71 □□D3ÔPÔ ST1 » S E K G • SEMIKRDN SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, - 2 600 V V II V o V 600 V ebo o 600 o II I m Vbe = Units > II CM UJ CO > VcEV Values 7 V lc D. C. 150 A tp = 1 ms 300 A If = - l c 150

Contextual Info: SK 50 B 06 UF SEMITOP 2 SK 50 B 06 UF 233/% 23/ 4 5 6 7     2 2 8 5 9: ; (: (: .< *:  :( !" Symbol Conditions Values Units 4 433/ A 8 5 9: ; 8=>5?+*;@2356:2@4"5 :7@ B 4 " C 5):7CD 6( ? E& :%F) 7 7 G 43 8=>5 +* ?*: ;@ 235233/

Contextual Info: SK 30 GB 123 Absolute Maximum Ratings Symbol Conditions IGBT 12+ 1 2+  (: % & ./ 0#        Values % & ./ 64 07  ; 3 7 % & ./ 64 07 %> Units 3.44 5 .4 88 . << = 1 1 9 9 ' =4 ? @ 3/4 0 8B ./ B= /4 9 9 ' =4 ? @ 3/4

Contextual Info: SEM IKRDN V rsm V rrm If r m s Fast Recovery Rectifier Diodes m a x im u m v a lu e s fo r c o n tin u o u s o p e r a tio n lF A v (s in . 10 A 10 A 10 A 180; T r e f = 120 °C,L = 10 mm; V 1,3 A 1,3 A f< 1 kHz) SK 1 GF SK 1 GH SK 1 GL 1,3 A 100 SK 1 GF 01

semikron SK 50 DB 100 D

Abstract: semikron SK 30 DB 100 D Semikron sk 50 dal
Contextual Info: fll3bb71 DDG37Rb Tb'i « S E K G S1E D s e M IK R O n SEMIKRON INC Maximum Ratings Values lc = 1 A, Vbe = - 2 V < CD VcBO Ie = 0 II I VcEV < VcEVsus ro Conditions m Symbol Units 1000 V 1000 V 1000 V V ebo lc = 0 7 V lc D. C. 50 A 100 A 50 A tp = 1 ms ICM If = —lc

Contextual Info: SK 35 GAR 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Chopper IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module ICRM = 3 x ICnom tpsc V 43 A 35 A 35 A 105 A -20 . 20 V 10 µs -40 . 175 °C

Contextual Info: 51E 5 • Ôl3bb71 000377b 070 M S E K G seMIKRDN SEfäKRÖN- INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A , Vbe = - 2 V > CM I II UJ CD > VcBO Ie = lc Units 1200 V 1200 V 1200 V I VcEV Values 7 V lc D. C. 300 A If = - lc D. C. 300 A V ebo = Ib Ptot

Contextual Info: SK 35 GAL 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Chopper IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module ICRM = 3 x ICnom tpsc V 43 A 35 A 35 A 105 A -20 . 20 V 10 µs -40 . 175 °C

Contextual Info: SK 30 GB 128 Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/"  )8 $ % +, -.        Values $ % +, 41 -5  9 0 5 $ % +, 41 -5 $; Units 0+11 3 +1 6, +, :1 ,1 ' ' 7 7 & <1 = > 0,1 - 6: +, :< ,1 7 7 & <1 = > 0,1