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SEMIKRON SEMIX151GAR12E4S Igbt Module, Npn, 1.2Kv, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX151GAR12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX151GAR12E4S	Bulk			8	1 - 10 $61.28 100 $56.14 1000 $56.14 10000 $56.14	Buy Now
SEMIKRON SEMIX151GAR12E4S 27890104 Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 150A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX151GAR12E4S 27890104				1	1 $186.71 10 $137.47 100 $128.24 1000 $128.24 10000 $128.24	Get Quote

SEMIX151GAR Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
SEMIX151GAR12T4S		Semikron	Trench IGBT Modules		Original	PDF	471.1KB	5

SEMIX151GAR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX151GAR12E4s SEMiX151GAR12E4s	PDF
Contextual Info: SEMiX151GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C Tc = 25°C 189	Original	SEMiX151GAR12T4s	PDF
Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX151GAR12E4s E63532	PDF
Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C	Original	SEMiX151GAR12E4s E63532	PDF
semix151gar Contextual Info: SEMiX151GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s tpsc Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX151GAR12T4s E63532 semix151gar	PDF
Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX151GAR12E4s E63532	PDF
Contextual Info: SEMiX151GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 450 A -40 . 175 °C Tc = 25 °C	Original	SEMiX151GAR12T4s	PDF
Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX151GAR12E4s E63532 App151GAR12E4s	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF