SEMIX223GD12E4C Search Results

SEMIX223GD12E4C Price and Stock

Filter by Manufacturer


SEMIKRON SEMIX223GD12E4C Igbt Module, Six, 1.2Kv, 333A; Continuous Collector Current:333A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX223GD12E4C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX223GD12E4C	Bulk			2	1 $1063.62 10 $1033.87 100 $974.37 1000 $974.37 10000 $974.37	Buy Now
SEMIKRON SEMIX223GD12E4C 27890208 Module: IGBT; transistor/transistor; IGBT three-phase bridge
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX223GD12E4C 27890208				1	1 $1220.82 10 $902.79 100 $838.16 1000 $838.16 10000 $838.16	Get Quote

SEMIX223GD12E4C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SEMiX223GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 333 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules SEMiX223GD12E4c VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX223GD12E4c E63532	PDF
Contextual Info: SEMiX223GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 333 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 675 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX223GD12E4c E63532	PDF
SEMIX223GD12E4C Abstract: C1161A c1161 BY 225 diode Contextual Info: SEMiX223GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 333 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 675 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX223GD12E4c E63532 SEMIX223GD12E4C C1161A c1161 BY 225 diode	PDF
Contextual Info: SEMiX223GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 333 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 675 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX223GD12E4c E63532 3xIF3GD12E4c	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF