SEMIX251 Search Results

Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX251GD126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

200 A WELDING INVERTER DESIGN BY IGBT

Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

Contextual Info: SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 256 A Tc = 100 °C 217 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A²s Tj = 150 °C 8800 A²s VRSM 1200 V VRRM 1200 V -40 . 150 °C -40 . 125 °C 1 min 4000

Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

Contextual Info: SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 250 A Tc = 100 °C 215 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A²s Tj = 150 °C 8800 A²s VRSM 1200 V VRRM 1200 V -40 . 150 °C -40 . 125 °C 1 min 4000

Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 242 A Tc = 80°C 170 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 207 A Tc = 80°C 143 A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules

Contextual Info: SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 256 A Tc = 100 °C 217 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A²s Tj = 150 °C 8800 A²s VRSM 1200 V VRRM 1200 V -40 . 150 °C -40 . 125 °C 1 min 4000

bridge rectifier module

Abstract: SEMIX251 Semikron M6 international rectifier 1660
Contextual Info: SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit A Rect. Diode Tc = 85 °C 250 Tc = 100 °C 215 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A2s Tj = 150 °C 8800 A2s VRSM 1200 V VRRM 1200 V -40 . 150 °C -40 . 125 °C

SEMIX353GB126V1

Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots