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    SEMIKRON SEMIX 503GB126HD

    Igbt Module, 1.2Kv, 480A, Semix 3; Continuous Collector Current:490A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX 503GB126HD
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    SEMIX503GB Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    SEMiX503GB126HD
    		Semikron Trench IGBT Modules Original PDF 491.94KB 2
    SEMIX503GB126HD
    		Semikron Trench IGBT Modules Original PDF 957.09KB 4
    SEMIX503GB126HDS
    		Semikron IGBT Power Module Original PDF 179.48KB 5
    SEMiX503GB126HDS
    		Semikron Trench IGBT Modules Original PDF 834.75KB 2
    SEMIX503GB126HDS
    		Semikron Trench IGBT Modules Original PDF 1.09MB 4

    SEMIX503GB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX503GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V


    Original     		SEMiX503GB126HDs SEMiX503GB126HDs E63532 Inv11: PDF

    SEMIX503GB

    Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		SEMiX503GB126HDs SEMIX503GB PDF

    Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		SEMiX503GB126HDs E63532 PDF

    Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C


    Original     		SEMiX503GB126HDs E63532 PDF

    C431A

    Abstract: C327A
    Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		SEMiX503GB126HDs E63532 C431A C327A PDF

    Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX503GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		SEMiX503GB126HDs E63532 PDF

    Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX503GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		SEMiX503GB126HDs SEMiX503GB126HDs E63532 PDF

    UPS sinus circuit

    Abstract: sine wave ups design SEMiX503GB126HDS 80C327
    Contextual Info: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		SEMiX503GB126HDs B100/125 R100exp B100/125 1/T-1/T100) UPS sinus circuit sine wave ups design SEMiX503GB126HDS 80C327 PDF

    30g 122 igbt

    Abstract: SEMIKRON type designation PCIM 176 display CALCULATION SemiSel 3.1 PCIM 176 pure sinus inverter circuit 60749 IGBT cross reference semikron CALCULATION SemiSel PCIM 95
    Contextual Info: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3


    Original     		PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF

    PCIM 176

    Abstract: PCIM 95 CALCULATION SemiSel 30g 122 igbt PCIM 176 display IGBT rectifier theory IGBT cross reference semikron pure sinus inverter circuit makrolon 9425 T100
    Contextual Info: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3


    Original     		PDF