SEMIX503GD126 Search Results

SEMIX503GD126 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SEMIX503GD126HDC		Semikron	IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1200V; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Package/Case:SEMiX 33; Collector Current:490A; Continuous Collector Current @ 25 C:490A	Original	PDF	993.22KB	5
SEMiX503GD126HDC		Semikron	Trench IGBT Modules	Original	PDF	1.04MB	2
SEMIX503GD126HDC		Semikron	Trench IGBT Modules	Original	PDF	1.05MB	4

SEMIX503GD126 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	SEMiX503GD126HDc E63532	PDF
Contextual Info: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 412 A Tc = 80°C 284 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules	Original	SEMiX503GD126HDc	PDF
SEMIX503GD126H Abstract: 80C284 Contextual Info: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 412 A Tc = 80°C 284 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules	Original	SEMiX503GD126HDc B100/125 R100exp B100/125 1/T-1/T100) SEMIX503GD126H 80C284	PDF
Contextual Info: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules SEMiX503GD126HDc VGES tpsc Tj ICRM = 2xICnom VCC = 600 V	Original	SEMiX503GD126HDc E63532	PDF
SEMIX503GD126H Contextual Info: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	SEMiX503GD126HDc E63532 SEMIX503GD126H	PDF
Contextual Info: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	SEMiX503GD126HDc E63532	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF