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    SEMIX503GD126H Search Results

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    SEMIX503GD126H Price and Stock

    SEMIKRON SEMIX503GD126HDC 27890740

    Module: IGBT; transistor/transistor; IGBT three-phase bridge
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX503GD126HDC 27890740 1
    • 1 $2098.43
    • 10 $1540.34
    • 100 $1428.72
    • 1000 $1428.72
    • 10000 $1428.72
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    SEMIX503GD126H Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SEMIX503GD126HDC Semikron IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1200V; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Package/Case:SEMiX 33; Collector Current:490A; Continuous Collector Current @ 25 C:490A Original PDF
    SEMiX503GD126HDC Semikron Trench IGBT Modules Original PDF
    SEMIX503GD126HDC Semikron Trench IGBT Modules Original PDF

    SEMIX503GD126H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX503GD126HDc E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 412 A Tc = 80°C 284 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules


    Original     		PDF SEMiX503GD126HDc

    SEMIX503GD126H

    Abstract: 80C284
    Text: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 412 A Tc = 80°C 284 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules


    Original     		PDF SEMiX503GD126HDc B100/125 R100exp B100/125 1/T-1/T100) SEMIX503GD126H 80C284

    Untitled

    Abstract: No abstract text available
    Text: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules SEMiX503GD126HDc VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX503GD126HDc E63532

    SEMIX503GD126H

    Abstract: No abstract text available
    Text: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX503GD126HDc E63532 SEMIX503GD126H

    Untitled

    Abstract: No abstract text available
    Text: SEMiX503GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX503GD126HDc E63532

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1