SEMIX603GB066HDS Search Results
SEMIX603GB066HDS Price and Stock
SEMIKRON SEMIX603GB066HDSIgbt Power Module; Continuous Collector Current:720A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:40W; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1V; Product Range:- Rohs Compliant: Yes |Semikron SEMIX603GB066HDS |
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SEMIX603GB066HDS | Bulk | 6 |
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SEMIX603GB066HDS | 381 |
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SEMIKRON SEMIX603GB066HDS (27891132)SEMIX; Trench IGBT Module; 600V; 800A |
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SEMIKRON SEMIX603GB066HDS 27891132Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A |
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SEMIX603GB066HDS Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SEMIX603GB066HDS |
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Trench IGBT Modules | Original | 1.13MB | 4 |
SEMIX603GB066HDS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX603GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V |
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SEMiX603GB066HDs SEMiX603GB066HDs E63532 Typical11: | |
Contextual Info: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C |
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SEMiX603GB066HDs | |
Contextual Info: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C |
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SEMiX603GB066HDs | |
Contextual Info: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C |
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SEMiX603GB066HDs E63532 | |
Contextual Info: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX603GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V |
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SEMiX603GB066HDs SEMiX603GB066HDs E63532 | |
Contextual Info: SEMiX603GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 720 A Tc = 80°C 541 A 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 771 A Tc = 80°C 562 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules |
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SEMiX603GB066HDs | |
matrix converter
Abstract: current source inverter R100exp
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SEMiX603GB066HDs B100/125 R100exp B100/125 1/T-1/T100) matrix converter current source inverter | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |