SEMIX653GB176HDS Search Results

SEMIX653GB176HDS Price and Stock

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SEMIKRON SEMIX653GB176HDS Igbt Power Module; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2V; Product Range:- Rohs Compliant: Yes \|Semikron SEMIX653GB176HDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX653GB176HDS	Bulk			6	1 - 10 $320.34 100 $301.91 1000 $301.91 10000 $301.91	Buy Now
RS	SEMIX653GB176HDS	Bulk			1	1 $1285.1 10 $1285.1 100 $1285.1 1000 $1285.1 10000 $1285.1	Get Quote
SEMIKRON SEMIX653GB176HDS 27890450 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX653GB176HDS 27890450				1	1 $984.87 10 $777.63 100 $699.67 1000 $699.67 10000 $699.67	Get Quote

SEMIX653GB176HDS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
SEMIX653GB176HDS		Semikron	Trench IGBT Modules		Original	PDF	1.12MB	4
SEMiX653GB176HDS		Semikron	Trench IGBT Modules		Original	PDF	834.76KB	2

SEMIX653GB176HDS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX653GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V	Original	SEMiX653GB176HDs SEMiX653GB176HDs E63532	PDF
Contextual Info: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C	Original	SEMiX653GB176HDs E63532	PDF
Contextual Info: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX653GB176HDs	PDF
E63532 Contextual Info: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules	Original	SEMiX653GB176HDs E63532	PDF
Contextual Info: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX653GB176HDs	PDF
Contextual Info: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX653GB176HDs	PDF
Contextual Info: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules	Original	SEMiX653GB176HDs B100/125 R100exp B100/125 1/T-1/T100)	PDF
IC1700 Contextual Info: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX653GB176HDs IC1700	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF