SEMIX653GD176HDC Search Results
SEMIX653GD176HDC Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SEMIX653GD176HDC |
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IGBT Module; Continuous Collector Current, Ic:650A; Collector Emitter Saturation Voltage, Vce(sat):2V; Collector Current:660A; Collector Emitter Voltage, Vceo:1700V; Continuous Collector Current @ 25 C:660A; Package/Case:SEMiX 33 RoHS Compliant: Yes | Original | 171.2KB | 5 | ||
SEMIX653GD176HDC |
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Trench IGBT Modules | Original | 1.07MB | 4 | ||
SEMiX653GD176HDC |
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Trench IGBT Modules | Original | 1.04MB | 2 |
SEMIX653GD176HDC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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C438A
Abstract: Data sheet of SEMiX653GD176HDc
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SEMiX653GD176HDc C438A Data sheet of SEMiX653GD176HDc | |
of SEMiX653GD176HDcContextual Info: SEMiX653GD176HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
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SEMiX653GD176HDc of SEMiX653GD176HDc | |
Contextual Info: SEMiX653GD176HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
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SEMiX653GD176HDc E63532 | |
SEMIX653GD176HDCContextual Info: SEMiX653GD176HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
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SEMiX653GD176HDc SEMIX653GD176HDC | |
E63532Contextual Info: SEMiX653GD176HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules |
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SEMiX653GD176HDc B100/125 R100exp B100/125 1/T-1/T100) E63532 | |
Data sheet of SEMiX653GD176HDcContextual Info: SEMiX653GD176HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules |
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SEMiX653GD176HDc Data sheet of SEMiX653GD176HDc | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |