SERIES SHUNT SOI RF SWITCH Search Results

Modeling of SOI FET for RF Switch Applications

Contextual Info: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is

Contextual Info: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of

Choosing the Right RF Switches for Smart Mobile Device Applications

Contextual Info: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than

rf mems switch spst

Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Contextual Info: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.

Optimized CMOS-SOI Process for High Performance RF Switches

Contextual Info: Optimized CMOS-SOI Process for High Performance RF Switches A. B. Joshi, S. Lee, Y. Y. Chen, and T. Y. Lee Skyworks Solutions, Inc., Irvine, CA Email: aniruddha.joshi@ieee.org ABSTRACT In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in

Contextual Info: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna

stacked transistor shunt switch

Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Contextual Info: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor

Contextual Info: CXA4420GC SP5T+ SP5T SOI Antenna Switch with MIPI Interface for Qualcomm chipset CXA4420GC Description CXA4420GC is the SP5T+SP5T antenna diversity switch for WCDMA/3G/LTE applications. CXA4420GC has a 1.8 V CMOS compatible decoder with Qualcomm chipset. The SONY Silicon On Insulator SOI technology is used for low insertion loss.

Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

Abstract: TPC2A Alcatel-Lucent
Contextual Info: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes

Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

Abstract: 180NM IBM
Contextual Info: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE

PE42480

Contextual Info: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding

stacked transistor shunt switch

Abstract: RF 107 CMOS Stacked RF M21 mosfet matrix m21 SPDT stacked FET r01n Peregrine MRF MOSFET
Contextual Info: CMOS SOS SWITCHES DESIGN CMOS SOS Switches Offer Useful Features, High Integration Understanding the basic theory and characteristics underlying CMOS SOS switch technology opens the door to numerous RF and microwave applications. s witching RF and microwave signals is a fundamental function in all radio applications. Accordingly, there are a great

TAG 302-600

Abstract: PE42924
Contextual Info: Changing RF Design. Forever. TM 2013 Commercial Products Product Selection Guide First Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor NASDAQ: PSMI is a fabless provider of high-performance radio-frequency (RF)

4cx250

Abstract: 741p TRANSISTOR GUIDE RSGB EHT COIL transformer amplifier 4cx250b qro linear for two metres precision rectifier using 741 4cx250b 1N414S
Contextual Info: Power supply and control circuits for a 4CX250B amplifier by A. J. WADE, BSc, G4AJW* M ANY amateurs are now using tetrodes of the 4CX250B family in their power amplifiers, and while such amplifiers usually present little difficulty from the rf point of view—there being several well-proved designs in the litera­

QFN-16 2.5mm x 2.5mm

Abstract: RFFM8202
Contextual Info: RFFM8202 2.4GHz to 2.5GHz 802.11b/g/n WiFi Front End Module Package Style: QFN, 16-pin, 2.5mmx2.5mmx0.45mm     NC C_RX C_BT 16 15 14 13 PDET 1 Features  ANT POUT = 19dBm 11g OFDM 2.5% EVM POUT = 21dBm Meeting 11b Spec Mask Voltage Range 3.0V to 4.8V

DAT-3175-SP

Abstract: 14001 schematic diagram
Contextual Info: Digital Step Attenuator 75Q DC-2000 MHz 31 dB, 1 dB Step 5 Bit, Serial Control Interface, Single Positive Supply Voltage, +3V Product Features • Single positive supply voltage, +3V • Immune to latch up • Excellent accuracy, 0.1 dB Typ • Serial control interface

Contextual Info: CA3256 HARRIS S E M I C O N D U C T O R 25M Hz, BiM O S Analog Video Switch and A m plifier November 1996 Features Description • 5 M u ltip le x V id e o C h an n els The CA3256 BiMOS analog video switch has five channels of CMOS multiplex switching for general-purpose video­

car ecu wiring system service manual

Abstract: LEARN ELECTRONIC ECU CAR BLOCK books on car immobilizer and references basics of wiring harness ATA5780 cars ecu immobilizer DETAILS of RFID use automatic vehicle parking system Generation of ASK,FSK,PSK ecu immo eeprom car Speed Sensor using RFID
Contextual Info: Automotive Compilation Volume 7 December 2010 Contents Table of Contents Configurable RF Architecture Gives Engineers Greater Design Flexibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Design and Security Considerations for Passive Immobilizer Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MAX3934

Abstract: MAX3952 MAX4281 898 resistor network
Contextual Info: 19-2605; Rev 0; 10/02 10.7Gbps Compact Laser Diode Driver The MAX3934 is a compact +5V or -5.2V laser driver designed to directly modulate a laser diode at data rates up to 10.7Gbps. The driver provides externally programmable laser biasing and modulation currents.

MAX3934

Abstract: MAX3952 MAX4281 1031G of 828 Transistor
Contextual Info: 19-2605; Rev 0; 10/02 10.7Gbps Compact Laser Diode Driver The MAX3934 is a compact +5V or -5.2V laser driver designed to directly modulate a laser diode at data rates up to 10.7Gbps. The driver provides externally programmable laser biasing and modulation currents.

PE97

Contextual Info: Product Specification PE97022 3500 MHz UltraCMOS Integer-N PLL Rad Hard for Space Applications Product Description Peregrine’s PE97022 is a high-performance integer-N PLL capable of frequency synthesis up to 3500 MHz. The device is designed for superior phase noise performance

Contextual Info: Product Specification PE4312 UltraCMOS RF Digital Step Attenuator 6-bit, 31.5 dB, 1 MHz – 4 GHz Product Description The PE4312 is a 50Ω, HaRP technology-enhanced 6-bit RF Digital Step Attenuator DSA designed for use in 3G/4G wireless infrastructure and other high performance

R2J240

Abstract: R2J24020F 61048fp R2J24010F R2S20020 M37512 61048FP laptop battery 3 cells diagram schematic m37512 M37512 r2j24010 R2J24020
Contextual Info: 2008.12 Renesas General-Purpose Linear ICs General Catalog Power Management Linear ICs/Standard Linear ICs www.renesas.com Renesas linear IC devices bring the concepts of “indispensable” and “used everywhere” to a new level. AC/DC Power Management Linear ICs

Contextual Info: HARRIS H S E M I C O N D U C T O R 1 5 7 3 1 12-Bit, 100 MSPS, High Speed D/A Converter August 1997 Description Features Throughput R a te . 100 MSPS Low P o w e r.