SFH483 Search Results
SFH483 Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SFH483 | Siemens | GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter | Original | 34.07KB | 5 | ||
SFH483 E7800 | Siemens | GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter | Original | 34.07KB | 5 | ||
SFH483E7800 | Siemens | GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter | Original | 34.07KB | 5 | ||
SFH483-L |
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GaAIAs IRED, High reliability, Matches all Si-Photodetectors, Anode is connected to the case | Original | 70.35KB | 6 | ||
SFH483-L-M E7800 |
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GaAIAs IRED, High reliability, Matches all Si-Photodetectors, Anode is connected to the case | Original | 70.34KB | 6 | ||
SFH 483 L/M E7800 |
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Optoelectronics - Infrared, UV, Visible Emitters - EMITTER IR 880NM 200MA TO-18 | Original | 159.73KB | |||
SFH483-M |
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GaAIAs IRED, High reliability, Matches all Si-Photodetectors, Anode is connected to the case | Original | 70.35KB | 6 |
SFH483 Price and Stock
ams OSRAM Group SFH-483-L-M-E7800EMITTER IR 880NM 200MA TO-18 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SFH-483-L-M-E7800 | Bulk |
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OSRAM Opto Semiconductors SFH 483 L/M E7800Opto SFH 483 L/M E7800 IR LED, 880nm, TO-18 Through Hole package |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SFH 483 L/M E7800 | Bulk | 25 |
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SFH483 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SIEMENS SFH483 GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O perating and Storage Tem perature Range T0P, Ts tg - 4 0 to + 80°C Jun ction Tem perature (T j). 100°C |
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SFH483 E7800" 160K/W S53b3ab | |
sfh462Contextual Info: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings * Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e T0 p. T s t g - 4 0 to + 8 0 °C J u n c tio n T e m p e ra tu re ( T j) .100°C |
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SFH483 BPX63, BP103, E78D0" SFH483 sfh462 | |
SFH 462
Abstract: SFH483-L BPX63 SFH463 tc25c25 SFH483-LE7800 SFH483-M din 40040 humidity
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SFH483 BPX63, BP103, E7800" 50KAN 160KyW SFH 462 SFH483-L BPX63 SFH463 tc25c25 SFH483-LE7800 SFH483-M din 40040 humidity | |
Contextual Info: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870 |
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SFH483 BPX63, BP103, LD242, SFH464, TcS25 E7800" /lE100mA | |
BP103 FContextual Info: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maxim um Ratings • Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e To p , Ts t q - 4 0 to + 80°C * Radiation in Near Infrared Range Ju n c tio n T e m p e ra tu re ( T j ) .100°C |
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SFH483 BPX63, BP103, E70OO" BP103 F | |
8PX43
Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
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SFH420 SFH421 BP104 BP103. SFH205, BP104, BP103B. LD271 LD271L LD274-1 8PX43 SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275 | |
SFH4646
Abstract: FH221 61jl
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FH2115 FH2210 SFH483501 SFH484401 4B7406 SFH4646 FH221 61jl | |
Contextual Info: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit |
Original |
E7800 Anwendungen2007-12-07 | |
Contextual Info: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit |
Original |
E7800 Anwendungen2007-04-02 | |
SFH483ME7800
Abstract: SFH483-M sfh483m E7800 LME7800
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Original |
E7800 E7800 Q62703Q4755 SFH483ME7800 SFH483-M sfh483m LME7800 | |
Contextual Info: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit |
Original |
E7800 Anwendungen2006-12-07 E7800 Q62703Q4755 | |
Contextual Info: -T-41-OS SIEMENS AKTIENGESELLSCHAF 47E • ß235b05 005b71b 0 * S I E G Introduction Laser diodes of sufficient quality with high optical output have only been on the market for a few years. A wealth of possible areas of application has lead to an upsurge in interest in |
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-T--41-OS 235b05 005b71b Q62702-P 62702-P SFH4835011â | |
lg 6154
Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
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Q60215-Y62 O60215-Y63-S1 Q60215-Y65 Q60215-Y66 Q60215-Y67 Q60215-Y111-S4 Q60215-Y111-S5 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 lg 6154 KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64 | |
SFH2324
Abstract: SFH551V photodiode ge ma 850 SFH4646 sfh4845 850 nm photodiode pigtail SFH2310 SFH4423 Laser diode LAR
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SFW452V SFH450 SFH750 SFH752 SFH450V SFH250/V SFH551/V. SFH780V SFH752V SFH483401 SFH2324 SFH551V photodiode ge ma 850 SFH4646 sfh4845 850 nm photodiode pigtail SFH2310 SFH4423 Laser diode LAR | |
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SFH 910
Abstract: BPX61 Q62902-B166 SFH 910 235 SFH463 sfh 309 fr SFH405-2 l71ii IM 317 ld271a
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Q62901-B79 Q62902-B166 310/FA SFH 910 BPX61 Q62902-B166 SFH 910 235 SFH463 sfh 309 fr SFH405-2 l71ii IM 317 ld271a | |
SFH400-2
Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
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SFH420 SFB421 SFH205, BP104 BP103. BP104, BP103B. LD271 LD271L SFH400-2 LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725 | |
Contextual Info: SIEMENS SFH 483501 40-STRIPE ARRAY Package Dimensions in mm 1 2 3 4 FEATURES N.C NTC Thermistor NTC Thermistor Laser Cathode Maximum Ratings Laser Diode CW Output Power, TSU0=25‘C <l>ecw Pulse Output Power, TSL)B=25"C (<l>epll|S) t < 1 5 0 m s . DS0 01 |
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40-STRIPE SFH483501 | |
Contextual Info: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process |
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LD242 GET06625 BP103, BPX63, SFH464, SFH483 0HSD1S37 /lE100mA 0H801037 |