SGS-THOMSON 256K EPROM Search Results

m27c2568

Abstract: m27c2568-25 1N914 M27C256B PDIP28 A13D BA431
Contextual Info: SGS-THOMSON M27C256B HDfgœaLKgTTSQROQ 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10O^A

M27256A

Contextual Info: 5 7 . SGS-THOMSON M27256 •LI NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V

M27C2001-15F1

Abstract: 27c2001 M27C2001
Contextual Info: SGS-THOMSON M27C2001 IL I 2048K 256K x 8 CMOS UV EPROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : _ Operating current 35 mA _ Stand by current 200 jiA. PROGRAMMING VOLTAGE 12.75V.

WM-52E

Contextual Info: S2E » • 712*1237 0037b34_470 ■S6TH S fi SGS-THOMSON T ~ if é - I 3 ~ 2 c\ S-THOMSON M27V201 LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ADVANCE DATA ■ LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (Ta = -40 to 85°C)

Contextual Info: / T 7 SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi M87C257 ADDRESS LATCHED 256K (32K x 8) UV EPROM and OTP EPROM • INTEGRATED ADDRESS LATCH ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|aA

Contextual Info: rZT SGS-THOMSON M48T35 M48T35Y ^ 7 # . raDWHHHOTMDEi 256K 32K x8 TIMEKEEPER • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

Contextual Info: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA

Contextual Info: r Z J SGS-THOMSON M27256 NMOS 256K 32K x 8 UV EPROM • FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ AND PROGRAM ■ FAST PROGRAMMING ALGORITHM ■ ELECTRONIC SIGNATURE

mgra

Abstract: PLCC32-32-LEAD M87C257-20F1 MGRA 21 M87C257-12F1
Contextual Info: SGS-THOMSON ILiCTtFM O O S M 87C 257 LATCHED 256K 32Kx8 CMOS UV EPROM - OTP ROM • ■ ■ ■ ■ ■ ■ INTEGRATED ADDRESS LATCH. VERY FAST ACCESS TIME : 100 ns. COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION :

27C256B

Contextual Info: [ Z J SGS-THOMSON ^JÆ, KiilDtgMIlILKgìrMMtgi M27C256B CMOS 256K 32K x 8 UV EPROM and OTP ROM ABBREVIATED DATA • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA

SGS M27C2001

Abstract: 1N914 IA10 M27C2001 TSOP32 am27c2001
Contextual Info: SGS"THOMSON !lLi TIM Raû©i M27C2001 2 Megabit 256K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(xA

Contextual Info: £ y j SGS-THOMSON 0 g[^@[l[L[l(gTO(ô Kiia(gi M27C4002 4 Megabit (256K x 16) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns > COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz

Contextual Info: rrz SGS-THOMSON M28F256 * 7 # . IM g[s3 i[Li(gTnS©l i!IO(gi CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 100ns (PRESTO F PROGRAMMING)

Contextual Info: ¿ = 7 SGS-THOMSON M27256 NMOS 256K 32K x 8 UV EPROM • FAST ACC ESS TIM E: 170ns ■ EXTENDED TEM PERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40m A max ■ TTL COMPATIBLE DURING READ AND PROGRAM ■ FAST PROGRAMM ING ALGORITHM

A12C

Abstract: M28F201 TSOP32 Scans-005192
Contextual Info: SGS-THOMSON M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10(xATyp. ■ 10,000 PROGRAM/ERASE CYCLES ■ 12V PROGRAMMING VOLTAGE ■ 5V ± 10% SUPPLY VOLTAGE

Contextual Info: r Z J SGS-THOMSON [ L ir a » « M27C2001 CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA - Standby Current 100nA

27C4002-12

Abstract: IP40-W
Contextual Info: SGS-THOMSON ilLdimrœKinei M 27C 4002 4096K 256K x 16 CMOS UV EPROM P R ELIM IN A R Y DATA • VERY FAST ACCESS TIME : 100ns. ■ COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 70mA at 10 MHz

Contextual Info: SGS-THOMSON M27V402 R f f lD ^ [ llL liO T IjîO ll i LOW VOLTAGE _ 4 Megabit 256K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ LOW POW ER ’’CMOS” CONSUMPTION:

Contextual Info: r Z J SGS-THOMSON M27V201 ^ T # . OKODÊlSûilLIllOTOliSIDÊi LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ABBREVIATED DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -40 to 85°C)

Contextual Info: SGS-THOMSON ^ 7 # M27C2001 [j* ^ Q i[L i(§ » M (g S CMOS 2 Megabit (256K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA

1N914

Abstract: M28F201 PDIP32 PLCC32 VA00644
Contextual Info: 5 7 , SGS-THOMSON M28F201 CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA FAST ACC ESS TIM E: 100ns LOW POWER CONSUMPTION - Standby Current: 10O^A Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIME 10(is (PRESTO F ALGORITHM)

Contextual Info: w# SGS-THOMSON M27V201 V # « RitlD M li[Lli©inS lii!lD©i LOW VOLTAGE 2 Megabit 256K x 8) UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA

Contextual Info: SEE » • TTSIEB? 0036432 723 ■SGTH 7 ^ ^ - Z 3 - /V SGS-THOMSON M46Z256 M46Z256Y iIUira RDDgi S G S-TH0HS0N CMOS 256K x 16 ZEROPOWER SRAM PRELIMINARY DATA ■ INTEGRATED LOW POWER SRAM, POWER­ FUL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIM­

c1237 ha

Abstract: mm27256
Contextual Info: rZ J SGS-THOMSON ^ 7m * HO lS s [ilLi(gî[àl(MD(gS M 27256 NMOS 256K (32K x 8) UV EPROM • FAST ACCESS TIME: 170ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE - LOW STANDBY CURRENT: 40mA max - TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM