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    SHOCKLEY DIODE Search Results

    SHOCKLEY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SHOCKLEY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 460 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)480 V(BO) Max. (V)720 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)360 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0


    Original     		PDF Current500u StyleAxial-10

    Untitled

    Abstract: No abstract text available
    Text: 1N3845 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3845 Current50m StyleDO-204AA NumberTY00200003

    Untitled

    Abstract: No abstract text available
    Text: 430 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)240 V(BO) Max. (V)360 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)180 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0


    Original     		PDF Current500u StyleAxial-10

    shockley diode

    Abstract: No abstract text available
    Text: 1N3838 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3838 Current15m StyleDO-204AA NumberTY00200003 shockley diode

    Untitled

    Abstract: No abstract text available
    Text: 410 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)80 V(BO) Max. (V)120 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)60 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0


    Original     		PDF Current500u StyleAxial-10

    shockley diode

    Abstract: No abstract text available
    Text: 1N3832 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3832 Current15m StyleDO-204AA NumberTY00200003 shockley diode

    Untitled

    Abstract: No abstract text available
    Text: 1N3489 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max. (A) Holding Current6.0m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m


    Original     		PDF 1N3489 StyleDO-204AA NumberTY00200003

    Untitled

    Abstract: No abstract text available
    Text: 1N3844 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)41 V(BO) Max. (V)49 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)27 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3844 Current50m StyleDO-204AA NumberTY00200003

    P-Channel Depletion Mode FET

    Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
    Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic


    Original     		PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion

    shockley diode

    Abstract: No abstract text available
    Text: 420 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)160 V(BO) Max. (V)240 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)120 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0


    Original     		PDF Current500u StyleAxial-10 shockley diode

    shockley diode

    Abstract: No abstract text available
    Text: 1N3490 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max. (A) Holding Current45m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m


    Original     		PDF 1N3490 Current45m StyleDO-204AA NumberTY00200003 shockley diode

    Untitled

    Abstract: No abstract text available
    Text: 1N3836 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)41 V(BO) Max. (V)49 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)27 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3836 Current15m StyleDO-204AA NumberTY00200003

    shockley diode

    Abstract: No abstract text available
    Text: 480 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)640 V(BO) Max. (V)960 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)480 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0


    Original     		PDF Current500u StyleAxial-10 shockley diode

    Untitled

    Abstract: No abstract text available
    Text: UF100C Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)110 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m


    Original     		PDF UF100C Current50m StyleTO-204AAvar NumberTY00200003

    Untitled

    Abstract: No abstract text available
    Text: T62R06130300 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)750 V(BO) Max. (V)0.8k I(S) Max. (A)15m I(TRM) Max. (A)200² @ t(w) (s) (Test Condition) I(TSM) Max. (A)3.0k¥ V(R) Max. (V)600 I(H) Max. (A) Holding Current15m V(TM) Max. (V)10 @I(T) (A) (Test Condition)2.5k


    Original     		PDF T62R06130300 Current15m StyleTO-200AB

    Untitled

    Abstract: No abstract text available
    Text: 1N3837 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3837 Current15m StyleDO-204AA NumberTY00200003

    shockley diode

    Abstract: No abstract text available
    Text: 470 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)560 V(BO) Max. (V)840 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)420 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0


    Original     		PDF Current500u StyleAxial-10 shockley diode

    Untitled

    Abstract: No abstract text available
    Text: 450 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)400 V(BO) Max. (V)600 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)300 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0


    Original     		PDF Current500u StyleAxial-10

    Untitled

    Abstract: No abstract text available
    Text: 1N3846 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3846 Current50m StyleDO-204AA NumberTY00200003

    Untitled

    Abstract: No abstract text available
    Text: 1N3840 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m


    Original     		PDF 1N3840 Current50m StyleDO-204AA NumberTY00200003

    Untitled

    Abstract: No abstract text available
    Text: 1N3936 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current11m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m


    Original     		PDF 1N3936 Current11m StyleDO-204AA NumberTY00200003

    shockley diode application

    Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
    Text: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has


    OCR Scan     		PDF 8000/nominal shockley diode application shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite

    shockley diode

    Abstract: diode shockley shockley 1n3842 shockley diode 1N3842 IN3831
    Text: MICROWAVE DIODE CORPORATION , , «3831 IN3846 • h -, SILICON PLANAR THYRISTOR DIODES lOOO Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 mA. u PACKAGE OUTLINE ELECTRI CAL PA RA M ETERS Type Switching Voltage Vg V Holding Cutrent IH (mA)


    OCR Scan     		PDF IN3831 IN3846 IN3832 IK3833 IN3834 IK3835 IN3836 IN3837 IN3838 shockley diode diode shockley shockley 1n3842 shockley diode 1N3842

    shockley diode

    Abstract: shockley diode shockley four layer diode shockley diode datasheet Thyristor Shockley curve tracer IN3831 Thyristor diodes IN3833
    Text: www.DataSheet.in M IC R O W A V E D IO D E C O R P O R A T IO N THROUGH SILICON PLANAR THYRISTOR DIODES 1.000 IMH 025 0 535B Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 mA, PACKAGE OUTLINE


    OCR Scan     		PDF M3831 N3846 IN3831 IN3832 IN3833 IN3834 IN3835 IN3836 IN3837 IN3838 shockley diode shockley diode shockley four layer diode shockley diode datasheet Thyristor Shockley curve tracer Thyristor diodes