1N3936 Search Results

Contextual Info: 1N3936 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current11m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m

4E20-8

Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current

fri07

Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current

1N3842

Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
Contextual Info: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

3S41SL

Abstract: shockley 4E20-28 4E20-3 4E20-8 4E20-M-28 4E20-M-3 4E20-M-8 4E30-3 4E30-8
Contextual Info: -FENldAL ELECTRONICS/APD * S3 DE | 3541SL.3 OODDTEE 3 | T r i FOUR-LAYER DIODES DO-7/DO-35 Case Typo Switching Voltage Vs ± V @ 25*C ' V ' ’ ' . . 4E20-3 4E20-M-3 4E20-8 - 4 E 2 0 -M -8 4 E 2 0 -2 8 20±4 20±4 20±4 20±4 20 ± 4 4E20-M-28

shockley

Abstract: 4E30-8 1N3839 1N3299 1N3836 1N3842 4E20-28 4E20-3 4E20-8 4E20-M-28
Contextual Info: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E 20-M -8 4E20-28 20±4 20±4 20±4 20±4 20 ± 4 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4

1N5411

Abstract: 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron
Contextual Info: PART NUMBER INDEX Part Number Manufacturer 1N3299 AmerMicroSC Mcrwv Diode 1N3300 AmerMicroSC Mcrwv Diode 1N3300A AmerMicroSC 1N3301 Mcrwv Diode 1N3301 A 1N3302 Mcrwv Diode 1N3302A 1N3303 CrimsonSemi 1N3303A Mcrwv Diode 1N3304 AmerMicroSC Mcrwv Diode 1N3304A

shockley

Abstract: 4E20-8 4E30-8 1N3844 1n3842 4E20-28 4E20-3 4E20-M-28 4E20-M-3 4E20-M-8
Contextual Info: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 - — 14-25 — 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4

shockley diode

Abstract: shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835
Contextual Info: TRIGGERS & SWITCHES Item Number Part Number Manufacturer Switching Voltage Min V Max Pulse ITRM @ Width (s) (A) Is Max VT Max (A) (A) @ IT IH Max (A) (A) Operating Temperature (Oe) Min Max Package Style Diac, (Bidirectional Diode Thyristor) (Cont'd) 060