SI 356/2 DIODE Search Results
SI 356/2 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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SI 356/2 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2050IContextual Info: n - n x V 'C X - Y Super Fast Recovery Diode Single Diode mn?â Surface Mount OUTLINE DIMENSIONS DF20L60U Package I STO-220 600V 20A •S M D •e y -rx • tr r 3 5 n s m •SRSÎÜ RATINGS Absolute Maximum Ratings a a Operating Junction Temperature Average Rectified Forward Current |
OCR Scan |
DF20L60U STO-220 DF20L60U 50HziE5£ J515-5 2050I | |
SGSP256
Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
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OCR Scan |
SGSP154 SGSP254/255/258 SGSP354/355/356 50V/400V SGSP254 SGSP354 OT-82 O-220 SGSP155 SGSP256 SGSP356 SP156 | |
SEMIX302GAL12T4SContextual Info: SEMiX302GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C Tc = 25°C 356 |
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SEMiX302GAL12T4s SEMIX302GAL12T4S | |
Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
Original |
SEMiX302GAL12E4s E63532 | |
Contextual Info: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C Tc = 25°C 356 |
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SEMiX302GAR12T4s | |
SEMiX302GAL12E4sContextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
Original |
SEMiX302GAL12E4s E63532 SEMiX302GAL12E4s | |
Contextual Info: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
Original |
SEMiX302GAR12T4s E63532 TypEMiX302GAR12T4s | |
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX302GAR12E4s E63532 | |
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX302GAR12E4s SEMiX302GAR12E4s | |
igbtContextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX302GAL12E4s SEMiX302GAL12E4s igbt | |
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
Original |
SEMiX302GAR12E4s E63532 | |
Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
Original |
SEMiX302GAL12E4s E63532 dEMiX302GAL12E4s | |
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C |
Original |
SEMiX302GAR12E4s E63532 | |
Contextual Info: SEMiX302GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX302GAL12T4s | |
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Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C |
Original |
SEMiX302GAL12E4s E63532 | |
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
Original |
SEMiX302GAR12E4s E63532 dEMiX302GAR12E4s | |
Contextual Info: SEMiX302GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
Original |
SEMiX302GAL12T4s E63532 TypEMiX302GAL12T4s | |
CS3717A
Abstract: CS3717AGNF16 MS-001 circuit diagram of stepper
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Original |
CS3717A CS3717A MS-001 CS3717AGNF16 CS3717AGNF16 MS-001 circuit diagram of stepper | |
Contextual Info: SEMiX302GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C ICRM = 3xICnom VGES |
Original |
SEMiX302GB12T4s | |
SEMiX302GB12E4sContextual Info: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
Original |
SEMiX302GB12E4s E63532 SEMiX302GB12E4s | |
SEMiX302GB12E4s
Abstract: SEMIX302GB12
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Original |
SEMiX302GB12E4s E63532 SEMiX302GB12E4s SEMIX302GB12 | |
Contextual Info: SEMiX302GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
Original |
SEMiX302GB12T4s E63532 | |
Contextual Info: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
Original |
SEMiX302GB12E4s SEMiX302GB12E4s E63532 | |
Contextual Info: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C |
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SEMiX302GB12E4s E63532 |