SI MMIC DOWNCONVERTER Search Results

MMIC WIDE-BAND AMPLIFIER sot-363

Abstract: uPC2757TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2757TB / UPC2758TB 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package Conversion Gain dB • WIDEBAND OPERATION:

SI MMIC DOWNCONVERTER

Contextual Info: 3 V SUPER MINIMOLD L-BAND SI MMIC DOWNCONVERTER FEATURES_ • INTERNAL BLOCK DIAGRAM HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz IF = 10 to 300 MHz • • ON BOARD OSCILLATOR

TOP 242 PN pin

Abstract: 1SV186 toshiba
Contextual Info: 3 V SUPER MINIMOLD L-BAND UPC2756TB SI MMIC DOWNCONVERTER FEATURES INTERNAL BLOCK DIAGRAM • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz IF = 10 to 300 MHz IF Output RF Input • ON BOARD OSCILLATOR

UPC2758TBE3

Contextual Info: 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES UPC2757TB UPC2758TB CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package VCC = 3 V, LO Power = -5 dBm RF Above LO 200 MHz IF Conversion Gain dB • WIDEBAND OPERATION:

Contextual Info: 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES UPC2757TB UPC2758TB CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package VCC = 3 V, LO Power = -5 dBm RF Above LO 200 MHz IF Conversion Gain dB • WIDEBAND OPERATION:

UPC2757T

Abstract: UPC2757TB UPC2757TB-E3-A UPC2758TB UPC2758TB-E3-A
Contextual Info: 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES UPC2757TB UPC2758TB CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package VCC = 3 V, LO Power = -5 dBm RF Above LO 200 MHz IF Conversion Gain dB • WIDEBAND OPERATION:

uPC2756

Abstract: 1SV186 UPC2745TB UPC2756T UPC2756TB UPC2756TB-E3-A SI MMIC DOWNCONVERTER
Contextual Info: 3 V SUPER MINIMOLD L-BAND UPC2756TB SI MMIC DOWNCONVERTER FEATURES INTERNAL BLOCK DIAGRAM • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz IF = 10 to 300 MHz IF Output RF Input • ON BOARD OSCILLATOR

Contextual Info: HITTITE MICROWAVE CORPORATION GaAs MMIC Double-Balanced 6 to 18 GHz Mixer HMC141 HMC142 HMC141 FEBRUARY 1995 Features Si.; CONVERSION LOSS: 10dB , ; ; a ".fili* 6 TO 18 GHZ RANGE RF & LO lift DC TO 6 GHZ IF BANDWIDTH HMC142 General Description The HMC141 chip is a miniature double-balanced

LNA ku-band

Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)

B7HF200

Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

B7HF200

Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.2, 2014-07-15 RF & Protection Devices Edition 2014-07-15 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

B7HF200

Abstract: receiver mmic BGT24MR2 homodyne receiver SI MMIC DOWNCONVERTER RO4350B prices quadrat Germanium power
Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

BGT24MTR12

Abstract: 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC
Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

T0825

Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

BGT24MTR11

Abstract: B7HF200 sun resistor 400 mohm 24 GHz transceiver VQFN32-9 IFX VQFN32
Contextual Info: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

UPC8236

Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
Contextual Info: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4

2SC5508

Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A
Contextual Info: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4