SI PBS DETECTOR Search Results

C2719

Abstract: K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Hamamatsu PbS

Abstract: K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: Two-color detectors K1713/K3413-01, -002 Wide spectral response range from UV through IR The K1713/K3413-01, -002 have a bi-level structure in which an infrared transmitting Si photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Hamamatsu PbS

Abstract: United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

C1103-04

Abstract: flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: Two-color detectors K1713/K3413-01, -002 Wide spectral response range from UV through IR The K1713/K3413-01, -002 have a bi-level structure in which an infrared transmitting Si photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: MEETbDT OGGHböb T HS Spectral Response 0.19 to 5 [im Type No. Outline No. P.36 Detector Element Active Area (mm) Shunt Resistance or Dark Resistance (MQ) Peak Photo Element Sensitivity Sensitivity Tempera­ Wavelength S ture Xp X.=?ip (-C ) (nm) (AW ) NEP

A3179-03

Abstract: pbse C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
Contextual Info: UV TO IR DETECTOR 複合素子 K1713/K3413-01, -02 紫外域から赤外域まで検出が可能 透過型Siフォトダイオードと赤外線検出素子がサンドイッチ構造になっているため 同一光路での設計が可能です。 特長

Infrared photodiode preamplifier

Contextual Info: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Two-color detectors cover a broad spectral response range, and are effectively used in such applications as flame monitors, spectro­ photometers and film thickness gauges.

k 341

Abstract: W450
Contextual Info: Two-color Detectors Broad Spectral Response Range from UV Through Infrared Tw o-color detectors have a sandwich structure in w hich an infraredtransm itting silicon photodiode is m ounted over an infrared detector. T his structure m akes it is possible to design instrum ents using the

K3413-03

Abstract: Infrared photodiode preamplifier
Contextual Info: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Tw o-color detectors cover a broad spectral response range, and are effectively used in such applications as flam e m onitors, spectro­ photometers and film thickness gauges.

B5170

Abstract: B5170-05 P5172-200 P27S0
Contextual Info: Infrared Detectors Ge Photodiodes Type No. .On.ess etherise notea ftclme Am» Paekag« 1 mm B 1720-02 T O -18 ¥>&ak Ssecfcai «estons# “ te g ' fC>: Sensrtivity U/-au«lnru^th n s V iW ^ i) ip Short Circuit (h o * te , • v m w W & aap8% • m li’ ’

Contextual Info: Infrared Detectors with Built-in Preamplifiers Non-cooled Types, TE-cooled Types Integral detector/Preamplifier combination assures easy handling and reliable operation These devices integrate an infrared detector with the matched pream­ plifier into a compact case. By simply connecting to a DC power sup­

Selection guide

Abstract: Infrared detectors P13243-011MA
Contextual Info: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,

pr 8501 b

Abstract: P394A P3226-02 P3226 PBS P394 series
Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

P3226

Abstract: P5168 P3226-02 G5832-05 P2682-01 P394 series Photodiode 2PIN TYPES G3476-01 G5832-02 P3258-02
Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame

transistor C4159

Contextual Info: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a

Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

thermistor inas

Abstract: INSB PHOTODIODE 101 thermistor InSb spectral response insb detector preamplifier c4159
Contextual Info: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass dewar cooled by liquid nitrogen is used for standard detector package. It allows for 8-hour continuous cooling.

G5832-01

Abstract: G5832
Contextual Info: InGaAs PIN Photodiodes Standard Types, Short-wavelength Enhanced Types, etc, High-performance NIR (Near Infrared) detectors with low noise • A wide line-up of device types are available: L a rg e a re a ty p es, sh o rt-w a v e len g th e n h an c e d ty p e s, etc.