SI1303D Search Results

Si1303DL-T1-gE3

Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

SI1303DL-T1-E3

Abstract: Si1303DL
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Si1303DL

Contextual Info: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1303DL

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free

in 4751

Abstract: AN609 Si1303DL
Contextual Info: Si1303DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si1303DL

Contextual Info: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1303DL-T1-gE3

Abstract: Si1303DL
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Si1303DL

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free

Si1303DL

Abstract: 31 MOSFET sot-323
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability

Si1303DL

Contextual Info: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI1303DL

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability

S-63639

Abstract: S-63639-Rev SI1303DL
Contextual Info: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Si1303DL

Contextual Info: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1303DL

Contextual Info: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Si1303DL

Contextual Info: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

EMC4000

Abstract: MEC5004 MEC5004 ECE5018 ECE5018 dell inverter pinout isl6260 pinout dell battery HAL00 nvg72m macallan IV SIO pinout
Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : HAL00 PCB NO : LA-2792 COMPAL P/N : 45135731L01 1 Travis DIS Schematics Document 2 2 uFCPGA Mobile Yonah Intel Calistoga + ICH7M 2006-01-20 REV : 1.0 (DELL: A00) 3 3 4 4 DELL CONFIDENTIAL/PROPRIETARY MB PCB Part Number

GST5009-LF

Abstract: GST5009LF g920at24U 88E8053-NNC1 FBMA-L11-201209-221LMA30T LG crt TV flyback transformer la3291 g781f compal sst39vf080-70-4c-ei
Contextual Info: 5 4 3 2 1 Project Name: PecosII IDX80 D D PCB Serial Number: LA-3291 PecosII Schematics Document C C Intel Merom Dual Core LV 1.5G /Yonah Single Core ULV 1.2G + Calistoga GM + ICH7-M 2007-02-26 B B REV: X0.6 A A Compal Electronics, Inc.(KunShan) Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

Si1303DL

Abstract: Si1303EDL
Contextual Info: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code

NTS2101PT

Contextual Info: LTM4676 Dual 13A or Single 26A µModule Regulator with Digital Power System Management Description Dual, Fast, Analog Loops with Digital Interface for Control and Monitoring n Wide Input Voltage Range: 4.5V to 26.5V n Output Voltage Range: 0.5V to 5.4V 4V on V

Contextual Info: LTM4676 Dual 13A or Single 26A µModule Regulator with Digital Power System Management DESCRIPTION Dual, Fast, Analog Loops with Digital Interface for Control and Monitoring n Wide Input Voltage Range: 4.5V to 26.5V n Output Voltage Range: 0.5V to 5.4V 4V on V