SI14 Search Results
SI14 Price and Stock
Vishay Siliconix SI1411DH-T1-GE3MOSFET P-CH 150V 420MA SOT363 |
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SI1411DH-T1-GE3 | Digi-Reel | 7,795 | 1 |
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Vishay Siliconix SI1469DH-T1-BE3MOSFET P-CH 20V 3.2A/2.7A SC70-6 |
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SI1469DH-T1-BE3 | Digi-Reel | 7,764 | 1 |
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Vishay Siliconix SI1403BDL-T1-E3MOSFET P-CH 20V 1.4A SC70-6 |
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SI1403BDL-T1-E3 | Digi-Reel | 4,297 |
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Vishay Siliconix SI1480DH-T1-BE3MOSFET N-CH 100V 2.1A/2.6A SC70 |
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SI1480DH-T1-BE3 | Cut Tape | 2,957 | 1 |
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Vishay Siliconix SI1499DH-T1-GE3MOSFET P-CH 8V 1.6A SC70-6 |
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SI1499DH-T1-GE3 | Digi-Reel | 1,150 | 1 |
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SI14 Datasheets (129)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Si1400DL | Vishay Intertechnology | N-Channel 20-V (D-S) MOSFET | Original | 69.13KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1400DL | Vishay Siliconix | N-Channel 20-V (D-S) MOSFET | Original | 40.32KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1400DL SPICE Device Model |
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N-Channel 20-V (D-S) MOSFET | Original | 222.68KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1400DL-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 1.6A SC70-6 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1400DL-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 1.6A SC-70-6 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1401EDH-T1-BE3 | Vishay Siliconix | MOSFET P-CH 12V 4A/4A SC70-6 | Original | 270.7KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1401EDH-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 4A SC-70-6 | Original | 12 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1402DH | Vishay Siliconix | N-Channel 30-V (D-S) MOSFET | Original | 90.63KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1402DH-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.7A SOT363 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1402DH-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.7A SOT363 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1403BDL-T1-BE3 | Vishay Siliconix | MOSFET P-CH 20V 1.4A SC70-6 | Original | 260.21KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1403BDL-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 1.4A SC70-6 | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1403BDL-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 1.5A SC70-6 | Original | 259.43KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1403CDL-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.1A SC-70-6 | Original | 11 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Si1403DL | Vishay Intertechnology | P-Channel 2.5-V (G-S) MOSFET | Original | 69.44KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1403DL | Vishay Siliconix | MOSFETs | Original | 69.44KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1403DL-DS | Vishay Telefunken | DS-Spice Model for Si1403DL | Original | 269.73KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si1403DL SPICE Device Model |
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P-Channel 2.5-V (G-S) MOSFET | Original | 208.33KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1403DL-T1 | Vishay Intertechnology | P-Channel 2.5-V (G-S) MOSFET | Original | 69.44KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1404BDH-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 1.9A SOT363 | Original | 7 |
SI14 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si1416EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si1416EDH AN609, 9774u 9125m 8816m 6885u 1252u 3841m 9719u 28-Mar-11 | |
SI1443EDH
Abstract: marking code bt S1209
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Si1443EDH SC-70 Si1443EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code bt S1209 | |
si1427Contextual Info: Si1427EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si1427EDH AN609, 3515u 1736m 9349m 1636u 2141m 9215u 1951m si1427 | |
Contextual Info: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition |
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Si1428EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si1405DLContextual Info: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition |
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Si1405DL 2002/95/EC OT-363 SC-70 Si1405DL-T1-E3 Si1405DL-T1-GE3 18-Jul-08 | |
Si1499DH
Abstract: P-Channel mosfet sot-363 Si1499DH-T1-E3
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Si1499DH OT-363 SC-70 2002/95/EC 18-Jul-08 P-Channel mosfet sot-363 Si1499DH-T1-E3 | |
Si1411DH
Abstract: si1411dh-t1-e3
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Si1411DH SC-70 2002/95/EC OT-363 SC-70 Si1411DH-T1-E3 Si1411DH-T1-GE3 18-Jul-08 | |
Si1426DH
Abstract: SI1426DH-T1-E3
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Si1426DH SC-70 2002/95/EC OT-363 SC-70 Si1426DH-T1-E3 Si1426DH-T1-GE3 18-Jul-08 | |
74468
Abstract: Si1471DH Si1471DH-T1-E3 Si1471DH-T1-GE3 S10 BN 320 sot363 ON Marking DS SI1471DHT1E3
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Si1471DH 2002/95/EC OT-363 SC-70 Si1471DH-T1-E3 Si1471DH-T1-GE3 18-Jul-08 74468 S10 BN 320 sot363 ON Marking DS SI1471DHT1E3 | |
0935 DIODE
Abstract: Si1413EDH
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Si1413EDH SC-70 2002/95/EC OT-363 SC-70 Si1413EDH-T1-E3 18-Jul-08 0935 DIODE | |
Si1406DHContextual Info: Si1406DH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 0.075 @ VGS = 2.5 V 3.6 0.096 @ VGS = 1.8 V 3.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package |
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Si1406DH SC-70 OT-363 SC-70 S-04475--Rev. 13-Aug-01 | |
Si1410EDH
Abstract: MARKING CODE AA
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Si1410EDH SC-70 2002/95/EC OT-363 SC-70 Si1410EDH-T1-E3 Si1410EDH-lectual 18-Jul-08 MARKING CODE AA | |
Si1419DHContextual Info: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance |
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Si1419DH SC-70 OT-363 Si1419DH-T1--E3 08-Apr-05 | |
Qrr20Contextual Info: Si1403BDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.150 @ VGS = −4.5 V −1.5 0.175 @ VGS = −3.6 V −1.4 0.265 @ VGS = −2.5 V −1.2 D TrenchFETr Power MOSFET Qg (Typ) 2.9 SOT-363 |
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Si1403BDL OT-363 SC-70 Si1403BDL-T1--E3 S-50137--Rev. 24-Jan-05 Qrr20 | |
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TB-17Contextual Info: New Product Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS |
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Si1405BDH OT-363 SC-70 Si1405BDH-T1-E3 08-Apr-05 TB-17 | |
74888Contextual Info: SPICE Device Model Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si1405BDH S-71490Rev. 23-Jul-07 74888 | |
Si1499DH
Abstract: Si1499DH-T1-E3
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Si1499DH OT-363 SC-70 18-Jul-08 Si1499DH-T1-E3 | |
Si1400DL
Abstract: Si1400DL-T1-E3
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Si1400DL OT-363 SC-70 Si1400DL-T1 Si1400DL-T1-E3 18-Jul-08 | |
S-81216-Rev
Abstract: Si1467DH Si1467DH-T1-E3
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Si1467DH OT-363 SC-70 Si1467DH-T1-E3 18-Jul-08 S-81216-Rev | |
Si1417EDH
Abstract: s0318
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Si1417EDH SC-70 OT-363 SC-70 S-03187--Rev. 05-Mar-01 s0318 | |
marking AF sc70-6Contextual Info: Si1404BDH New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (W) 30 0.238 @ VGS = 4.5 V 1.9 0.380 @ VGS = 2.5 V 1.51 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 1 1 nC 1.1 COMPLIANT |
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Si1404BDH SC-70 Si1404BDH-T1--E3 51453--Rev. marking AF sc70-6 | |
sc 1287Contextual Info: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition |
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Si1422DH 2002/95/EC OT-363 SC-70 Si1422DH-T1-GE3 11-Mar-11 sc 1287 | |
sc 0645Contextual Info: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21 |
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Si1405BDH 2002/95/EC OT-363 SC-70 Si1405BDH-T1-E3 Si1405BDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc 0645 | |
Si1401
Abstract: SI1401EDH-T1-GE3 si1401e
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Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 18-Jul-08 Si1401 si1401e |