SI1417DH Search Results
SI1417DH Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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Si1417DH | Vishay Intertechnology | P-Channel 12-V (D-S) MOSFET | Original | 41.86KB | 5 | ||
SI1417DH | Vishay Siliconix | MOSFETs | Original | 41.86KB | 5 | ||
Si1417DH SPICE Device Model |
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P-Channel 12-V (D-S) MOSFET | Original | 200.95KB | 3 |
SI1417DH Price and Stock
Vishay Siliconix SI1417DH-T1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1417DH-T1 | 2,320 | 5 |
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Buy Now | ||||||
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SI1417DH-T1 | 1,856 |
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Buy Now |
SI1417DH Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • TrenchFET Power MOSFETS: 1.8 V Rated • Thermally Enhanced SC-70 Package |
Original |
Si1417DH SC-70 OT-363 SC-70 Si1417DH-T1 Si1417DH-T1-E3 08-Apr-05 | |
Si1417DHContextual Info: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si1417DH 18-Jul-08 | |
Si1417DHContextual Info: Si1417DH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 0.115 @ VGS = –2.5 V –2.9 0.160 @ VGS = –1.8 V –2.4 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package |
Original |
Si1417DH SC-70 OT-363 SC-70 S-20918--Rev. 01-Jul-02 | |
Si1417DH
Abstract: 828S
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Original |
Si1417DH 15-Jul-02 828S | |
Contextual Info: Si1417DH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 0.115 @ VGS = –2.5 V –2.9 0.160 @ VGS = –1.8 V –2.4 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package |
Original |
Si1417DH SC-70 OT-363 SC-70 08-Apr-05 | |
Si1417DHContextual Info: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si1417DH S-50151Rev. 07-Feb-05 | |
Si1417DH
Abstract: 71197
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Original |
Si1417DH SC-70 OT-363 SC-70 Si1417DH-T1 Si1417DH-T1-E3 18-Jul-08 71197 | |
AN609
Abstract: Si1417DH
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Original |
Si1417DH AN609 01-Mar-06 | |
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
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Original |
2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
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Original |
Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 |