SI2367DS Search Results

Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model Si2367DS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Si2367DS

Contextual Info: SPICE Device Model Si2367DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

SI2367DS

Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

Si2367DS

Abstract: H7 MARKING
Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

si2367

Abstract: h7 sot23 diode SI2367DS SI236
Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

5506

Abstract: AN609 Si2367DS
Contextual Info: Si2367DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)d VDS (V) RDS(on) (Ω) 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs