SI3429EDV Search Results
SI3429EDV Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI3429EDV-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 20V TSOP6S | Original | 249.91KB |
SI3429EDV Price and Stock
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Vishay Siliconix SI3429EDV-T1-GE3MOSFET P-CH 20V 8A/8A 6TSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3429EDV-T1-GE3 | Digi-Reel | 5,495 | 1 |
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Vishay Intertechnologies SI3429EDV-T1-GE3P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI3429EDV-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3429EDV-T1-GE3 | Reel | 19 Weeks | 6,000 |
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SI3429EDV-T1-GE3 | 9,345 |
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SI3429EDV-T1-GE3 | Cut Tape | 605 | 5 |
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SI3429EDV-T1-GE3 | Reel | 3,000 | 3,000 |
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SI3429EDV-T1-GE3 | Reel | 6,000 | 3,000 |
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SI3429EDV-T1-GE3 | 20 Weeks | 3,000 |
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SI3429EDV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si3429EDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.0210 at VGS = -4.5 V -8 0.0240 at VGS = -2.5 V -8 0.0380 at VGS = -1.8 V -8 Qg (TYP.) 43.2 nC D 6 • 100 % Rg tested |
Original |
Si3429EDV Si3429Eelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model Si3429EDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
Original |
Si3429EDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |