SI3863BDV Search Results

74118

Abstract: Si3863DV-T1-E3 Si3863BDV Si3863BDV-T1-E3 Si3863DV Si3863DV-T1
Contextual Info: Specification Comparison Vishay Siliconix Si3863BDV vs. Si3863DV Description: Package: Pin Out: Load Switch with Level-Shift TSOP-6 Identical Part Number Replacements: Si3863BDV-T1-E3 Replaces Si3863DV-T1-E3 Si3863BDV-T1-E3 Replaces Si3863DV-T1 Summary of Performance:

Si3863BDV

Contextual Info: Si3863BDV Vishay Siliconix New Product Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 2.5 to 12 rDS(on) (W) ID (A) 0.075 @ VIN = 4.5 V "2.5 0.105 @ VIN = 3.0 V "2.1 0.140 @ VIN = 2.5 V "1.8 2.5-V Rated ESD Protected: 3000 V 105-mW Low rDS(on) TrenchFETr

Si3863BDV

Contextual Info: Si3863BDV Vishay Siliconix New Product Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 2.5 to 12 rDS(on) (W) ID (A) 0.075 @ VIN = 4.5 V "2.5 0.105 @ VIN = 3.0 V "2.1 0.140 @ VIN = 2.5 V "1.8 2.5-V Rated ESD Protected: 3000 V 105-mW Low rDS(on) TrenchFETr

Contextual Info: Si3863BDV Vishay Siliconix New Product Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 2.5 to 12 rDS(on) (W) ID (A) 0.075 @ VIN = 4.5 V "2.5 0.105 @ VIN = 3.0 V "2.1 0.140 @ VIN = 2.5 V "1.8 2.5-V Rated ESD Protected: 3000 V 105-mW Low rDS(on) TrenchFETr

74118

Abstract: Si3863BDV Si3863BDV-T1-E3 Si3863DV Si3863DV-T1 Si3863DV-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si3863BDV vs. Si3863DV Description: Load Switch with Level-Shift Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3863BDV-T1-E3 Replaces Si3863DV-T1-E3 Si3863BDV-T1-E3 Replaces Si3863DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

AN609

Abstract: Si3863BDV
Contextual Info: Si3863BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

philips resistor

Abstract: mosfet 4800 sot26 sot363 transistor 4800 mosfet philips data pdta LMN200B01 Si3863DV si5499 EMF32 LMN200B02
Contextual Info: New Product Announcement May 16, 2006 Announcing “NEW” MOSFET + Transistor Complex Arrays in SOT-26 LMN200B01 / LMN400B01 and SOT 363 (LMN200B02 / LMN400E01) Packages A 6 B C 5 4 H 1 K M 2 3 J LMN200B01 / LMN400B01 D Min 0.35 1.5 2.7 ⎯ ⎯ 2.9 0.013

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no