SI4156 Search Results
SI4156 Price and Stock
Vishay Intertechnologies SI4156DY-T1-GE3Trans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4156DY-T1-GE3) |
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SI4156DY-T1-GE3 | Reel | 15 Weeks | 2,500 |
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SI4156DY-T1-GE3 | 51,475 |
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SI4156DY-T1-GE3 | Cut Tape | 2,500 |
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SI4156DY-T1-GE3 | 16,980 |
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SI4156DY-T1-GE3 | Reel | 5,000 | 2,500 |
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SI4156DY-T1-GE3 | 19 Weeks | 2,500 |
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SI4156DY-T1-GE3 | 16 Weeks | 2,500 |
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Others SI4156DYAVAILABLE EU |
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SI4156DY | 3,750 |
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Vishay Siliconix SI4156DY-T1-GE3Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8 |
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SI4156DY-T1-GE3 | 12,500 | 1 |
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Vishay Huntington SI4156DY-T1-GE3MOSFET N-CH 30V 24A 8-SOIC |
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SI4156DY-T1-GE3 | 90,000 |
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SI4156 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SI4156DY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 24A 8-SOIC | Original |
SI4156 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model Si4156DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si4156DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si4156DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY RDS(on) (Ω) |
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Si4156DY 2002/95/EC Si4156DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si4156DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY RDS(on) (Ω) |
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Si4156DY 2002/95/EC Si4156DY-T1-GE3 11-Mar-11 | |
Contextual Info: Si4156DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY RDS(on) (Ω) |
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Si4156DY 2002/95/EC Si4156DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model Si4156DY Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si4156DY 18-Jul-08 | |
AN609Contextual Info: Si4156DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si4156DY AN609, 09-Apr-09 AN609 | |
SI415
Abstract: S0912 SI4156
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Si4156DY 2002/95/EC Si4156DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI415 S0912 SI4156 | |
Si4156DY
Abstract: si4156
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Si4156DY 2002/95/EC Si4156DY-T1-GE3 18-Jul-08 si4156 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Contextual Info: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy |
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1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |